公开(公告)号：US20250015733A1

公开(公告)日：2025-01-09

申请号：US18218794

申请日：2023-07-06

Applicant: Applied Materials, Inc.

Inventor： Mukund SUNDARARAJAN ,  Sarath BABU ,  Cheng-Hsiung Matthew TSAI ,  Ananthkrishna JUPUDI ,  Ross MARSHALL

IPC: H02N13/00 ,  B23Q3/15 ,  B23Q11/12

Abstract: Embodiments of bipolar electrostatic chucks are provided herein. In some embodiments, a bipolar electrostatic chuck, includes: the electrostatic chuck; and a plurality of electrodes disposed in the electrostatic chuck, wherein the plurality of electrodes include a positive electrode arranged in a first pattern comprising a plurality of first arcuate bands coupled together via first connection fingers that extend radially therebetween and a negative electrode arranged in a second pattern comprising a plurality of second arcuate bands coupled together via second connection fingers that extend radially therebetween, wherein the plurality of first arcuate bands are arranged in an alternating pattern with the plurality of second arcuate bands, wherein there is a gap between the first pattern and the second pattern.

公开(公告)号：US20240183028A1

公开(公告)日：2024-06-06

申请号：US18442234

申请日：2024-02-15

Applicant: Applied Materials, Inc.

Inventor： Xiangjin XIE ,  Carmen LEAL CERVANTES ,  Feng CHEN ,  Lu CHEN ,  Wenjing XU ,  Aravind KAMATH ,  Cheng-Hsiung Matthew TSAI ,  Tae Hong HA ,  Alexander JANSEN ,  Xianmin TANG

IPC: C23C14/56 ,  H01J37/32 ,  H01L21/02 ,  H01L21/67

CPC classification number: C23C14/564 ,  H01J37/32082 ,  H01L21/02043 ,  H01L21/67017 ,  H01J2237/022

Abstract: Methods and apparatus for processing a substrate include cleaning and self-assembly monolayer (SAM) formation for subsequent reverse selective atomic layer deposition. An apparatus may include a process chamber with a processing volume and a substrate support including a pedestal, a remote plasma source fluidly coupled to the process chamber and configured to produce radicals or ionized gas mixture with radicals that flow into the processing volume to remove residue or oxides from a surface of the substrate, a first gas delivery system with a first ampoule configured to provide at least one first chemical into the processing volume to produce a SAM on the surface of the substrate, a heating system located in the pedestal and configured to heat a substrate by flowing gas on a backside of the substrate, and a vacuum system fluidly coupled to the process chamber and configured to control heating of the substrate.

公开(公告)号：US20210371972A1

公开(公告)日：2021-12-02

申请号：US16889017

申请日：2020-06-01

Applicant: APPLIED MATERIALS, INC.

Inventor： Xiangjin XIE ,  Carmen LEAL CERVANTES ,  Feng CHEN ,  Lu CHEN ,  Wenjing XU ,  Aravind KAMATH ,  Cheng-Hsiung Matthew TSAI ,  Tae Hong HA ,  Alexander JANSEN ,  Xianmin TANG

IPC: C23C14/56 ,  H01L21/02 ,  H01L21/67 ,  H01J37/32

Abstract: Methods and apparatus for processing a substrate include cleaning and self-assembly monolayer (SAM) formation for subsequent reverse selective atomic layer deposition. An apparatus may include a process chamber with a processing volume and a substrate support including a pedestal, a remote plasma source fluidly coupled to the process chamber and configured to produce radicals or ionized gas mixture with radicals that flow into the processing volume to remove residue or oxides from a surface of the substrate, a first gas delivery system with a first ampoule configured to provide at least one first chemical into the processing volume to produce a SAM on the surface of the substrate, a heating system located in the pedestal and configured to heat a substrate by flowing gas on a backside of the substrate, and a vacuum system fluidly coupled to the process chamber and configured to control heating of the substrate.

公开(公告)号：US20230162954A1

公开(公告)日：2023-05-25

申请号：US17530809

申请日：2021-11-19

Applicant: Applied Materials, Inc.

Inventor： William R. JOHANSON ,  Keith A. MILLER ,  Cheng-Hsiung Matthew TSAI ,  John C. FORSTER ,  Mukund SUNDARARAJAN

IPC: H01J37/32

CPC classification number: H01J37/32724 ,  H01J37/32082 ,  H01J2237/002 ,  H01J2237/2007 ,  H01J2237/332 ,  H01J37/34

Abstract: Embodiments of substrate supports for use in substrate processing chambers are provided herein. In some embodiments, a substrate support includes: an upper assembly having a base plate assembly coupled to a lower surface of a cooling plate, wherein the base plate assembly includes a plurality of electrical feedthroughs, and wherein the cooling plate includes a plurality of openings aligned with the plurality of electrical feedthroughs; an electrostatic chuck disposed on the upper assembly and removably coupled to the cooling plate, wherein the electrostatic chuck has a chucking electrode disposed therein that is electrically coupled to a first pair of electrical feedthroughs of the plurality of electrical feedthroughs; and an inner tube coupled to the cooling plate and configured to provide an RF delivery path to the electrostatic chuck.