公开(公告)号：US20170178956A1

公开(公告)日：2017-06-22

申请号：US15384219

申请日：2016-12-19

Applicant: APPLIED MATERIALS, INC.

Inventor： Jin Hee PARK ,  Tae Hong HA ,  Sang-Hyeob LEE ,  Thomas Jongwan KWON ,  Jaesoo AHN ,  Xianmin TANG ,  Er-Xuan PING ,  Sree KESAPRAGADA

IPC: H01L21/768 ,  C23C16/458 ,  C23C16/48 ,  C23C16/455 ,  H01L21/285 ,  H01L21/67

CPC classification number: H01L21/76879 ,  C23C16/045 ,  C23C16/16 ,  C23C16/18 ,  C23C16/45512 ,  C23C16/45561 ,  C23C16/481 ,  C23C16/56 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/67017 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/6719 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76882 ,  H01L21/76883 ,  H01L23/53209 ,  H01L27/11556 ,  H01L27/11582

Abstract: Methods and apparatus for depositing a cobalt layer in a feature, such as, a word line formed in a substrate, are provided herein. In some embodiments, method of processing a substrate includes: exposing a substrate at a first temperature to a cobalt containing precursor to deposit a cobalt layer within a word line feature formed in the substrate, wherein the word line feature is part of a 3D NAND device; and annealing the substrate to remove contaminants from the cobalt layer and to reflow the cobalt layer into the word line feature, wherein the substrate is at a second temperature greater than the first temperature during the annealing.

公开(公告)号：US20160268207A1

公开(公告)日：2016-09-15

申请号：US14711135

申请日：2015-05-13

Applicant: Applied Materials, Inc.

Inventor： Mehul B. NAIK ,  Paul F. MA ,  Tae Hong HA ,  Srinivas GUGGILLA

IPC: H01L23/532 ,  H01L23/528 ,  H01L23/522 ,  H01L21/768

CPC classification number: H01L23/53238 ,  H01L21/28556 ,  H01L21/76846

Abstract: A method and apparatus for forming an interconnect on a substrate is provided. A protective layer is formed on the substrate and in a via formed on the substrate wherein the protective layer is resistant to a halogen containing material. A barrier layer is formed on top of the protective layer. The barrier layer comprises a halogen containing material. A metal layer is deposited over the barrier layer. In another embodiment, the protective layer is selectively deposited in the via.

Abstract translation: 提供了一种用于在基板上形成互连的方法和装置。 在衬底上形成保护层，形成在衬底上的通孔中，其中保护层对含卤素材料具有耐受性。 在保护层的顶部形成阻挡层。 阻挡层包括含卤素材料。 在阻挡层上沉积金属层。 在另一个实施例中，保护层选择性地沉积在通孔中。

公开(公告)号：US20160160350A1

公开(公告)日：2016-06-09

申请号：US15045667

申请日：2016-02-17

Applicant: Applied Materials, Inc.

Inventor： Tae Hong HA ,  Sang Ho YU ,  Kiejin PARK

IPC: C23C16/46 ,  C23C16/513

CPC classification number: C23C16/46 ,  C23C16/0281 ,  C23C16/16 ,  C23C16/18 ,  C23C16/505 ,  C23C16/513 ,  C23C28/322 ,  C23C28/34 ,  H01L21/28556 ,  H01L21/76841 ,  H01L21/76873 ,  H01L2221/1089

Abstract: Methods for depositing ruthenium by a PECVD process are described herein. Methods for depositing ruthenium can include positioning a substrate in a processing chamber, the substrate having a barrier layer formed thereon, heating and maintaining the substrate at a first temperature, flowing a first deposition gas into a processing chamber, the first deposition gas comprising a ruthenium containing precursor, generating a plasma from the first deposition gas to deposit a first ruthenium layer over the barrier layer, flowing a second deposition gas into the processing chamber to deposit a second ruthenium layer over the first ruthenium layer, the second deposition gas comprising a ruthenium containing precursor, depositing a copper seed layer over the second ruthenium layer and annealing the substrate at a second temperature.

Abstract translation: 本文描述了通过PECVD工艺沉积钌的方法。 用于沉积钌的方法可以包括将衬底定位在处理室中，所述衬底具有形成在其上的阻挡层，将衬底加热并保持在第一温度，使第一沉积气体流入处理室，第一沉积气体包括钌 从所述第一沉积气体产生等离子体以在所述阻挡层上沉积第一钌层，将第二沉积气体流入所述处理室以在所述第一钌层上沉积第二钌层，所述第二沉积气体包含钌 在第二钌层上沉积铜籽晶层并在第二温度下退火衬底。

公开(公告)号：US20240183028A1

公开(公告)日：2024-06-06

申请号：US18442234

申请日：2024-02-15

Applicant: Applied Materials, Inc.

Inventor： Xiangjin XIE ,  Carmen LEAL CERVANTES ,  Feng CHEN ,  Lu CHEN ,  Wenjing XU ,  Aravind KAMATH ,  Cheng-Hsiung Matthew TSAI ,  Tae Hong HA ,  Alexander JANSEN ,  Xianmin TANG

IPC: C23C14/56 ,  H01J37/32 ,  H01L21/02 ,  H01L21/67

CPC classification number: C23C14/564 ,  H01J37/32082 ,  H01L21/02043 ,  H01L21/67017 ,  H01J2237/022

Abstract: Methods and apparatus for processing a substrate include cleaning and self-assembly monolayer (SAM) formation for subsequent reverse selective atomic layer deposition. An apparatus may include a process chamber with a processing volume and a substrate support including a pedestal, a remote plasma source fluidly coupled to the process chamber and configured to produce radicals or ionized gas mixture with radicals that flow into the processing volume to remove residue or oxides from a surface of the substrate, a first gas delivery system with a first ampoule configured to provide at least one first chemical into the processing volume to produce a SAM on the surface of the substrate, a heating system located in the pedestal and configured to heat a substrate by flowing gas on a backside of the substrate, and a vacuum system fluidly coupled to the process chamber and configured to control heating of the substrate.

公开(公告)号：US20220084882A1

公开(公告)日：2022-03-17

申请号：US17022058

申请日：2020-09-15

Applicant: APPLIED MATERIALS, INC.

Inventor： Lanlan ZHONG ,  Fuhong ZHANG ,  Gang SHEN ,  Feng CHEN ,  Rui LI ,  Xiangjin XIE ,  Tae Hong HA ,  Xianmin TANG

IPC: H01L21/768 ,  C23C16/455 ,  G11B5/31

Abstract: Methods and apparatus for filling features on a substrate are provided herein. In some embodiments, a method of filling features on a substrate includes: depositing a first metallic material on the substrate and within a feature disposed in the substrate in a first process chamber via a chemical vapor deposition (CVD) process at a first temperature; depositing a second metallic material on the first metallic material in a second process chamber at a second temperature and at a first bias power to form a seed layer of the second metallic material; etching the seed layer in the second process chamber at a second bias power greater than the first bias power to form an intermix layer within the feature comprising the first metallic material and the second metallic material; and heating the substrate to a third temperature greater than the second temperature, causing a reflow of the second metallic material.

公开(公告)号：US20210371972A1

公开(公告)日：2021-12-02

申请号：US16889017

申请日：2020-06-01

Applicant: APPLIED MATERIALS, INC.

Inventor： Xiangjin XIE ,  Carmen LEAL CERVANTES ,  Feng CHEN ,  Lu CHEN ,  Wenjing XU ,  Aravind KAMATH ,  Cheng-Hsiung Matthew TSAI ,  Tae Hong HA ,  Alexander JANSEN ,  Xianmin TANG

IPC: C23C14/56 ,  H01L21/02 ,  H01L21/67 ,  H01J37/32

Abstract: Methods and apparatus for processing a substrate include cleaning and self-assembly monolayer (SAM) formation for subsequent reverse selective atomic layer deposition. An apparatus may include a process chamber with a processing volume and a substrate support including a pedestal, a remote plasma source fluidly coupled to the process chamber and configured to produce radicals or ionized gas mixture with radicals that flow into the processing volume to remove residue or oxides from a surface of the substrate, a first gas delivery system with a first ampoule configured to provide at least one first chemical into the processing volume to produce a SAM on the surface of the substrate, a heating system located in the pedestal and configured to heat a substrate by flowing gas on a backside of the substrate, and a vacuum system fluidly coupled to the process chamber and configured to control heating of the substrate.

公开(公告)号：US20220037204A1

公开(公告)日：2022-02-03

申请号：US16983402

申请日：2020-08-03

Applicant: APPLIED MATERIALS, INC.

Inventor： Wenjing XU ,  Gang SHEN ,  Feng CHEN ,  Tae Hong HA

IPC: H01L21/768 ,  H01L23/532

Abstract: Methods and apparatus that forms a stabilization layer on copper-based material to inhibit formation of copper voids in the copper-based material. In some embodiments, a method of forming the stabilization layer on the copper-based material includes depositing a first stabilization layer on the copper-based material where the first stabilization layer forms a continuous film on the copper-based material and is formed of a first material that does not alloy with copper, depositing a second stabilization layer on the first stabilization layer where the second stabilization layer is formed from a second material that alloys with copper and where the first stabilization layer is configured to inhibit formation of voids in the copper-based material during subsequent high thermal budget processing.

公开(公告)号：US20210320034A1

公开(公告)日：2021-10-14

申请号：US16845749

申请日：2020-04-10

Applicant: APPLIED MATERIALS, INC.

Inventor： Wei LEI ,  Yi XU ,  Yu LEI ,  Tae Hong HA ,  Raymond HUNG ,  Shirish A. PETHE

IPC: H01L21/768 ,  H01L21/285 ,  H01L21/3213

Abstract: Methods and apparatus for selectively depositing a tungsten layer atop a dielectric surface. In embodiments the method includes: depositing a tungsten layer via a physical vapor deposition (PVD) process atop a substrate field and atop a sidewall and a dielectric bottom surface of a feature disposed in a substrate to form a first tungsten portion having a first thickness atop the substrate field, a second tungsten portion having a second thickness atop the sidewall, and a third tungsten portion having a third thickness atop the dielectric bottom surface, wherein the second thickness is less than the first thickness and third thickness; oxidizing a top surface of the tungsten layer to form a first oxidized tungsten portion atop the substrate field, a second oxidized tungsten portion atop the side wall, and a third oxidized tungsten portion atop the dielectric bottom surface; removing the first oxidized tungsten portion, the second oxidized tungsten portion and the third oxidized tungsten portion, wherein the second tungsten portion is completely removed from the sidewall; and passivating or completely removing the first tungsten portion from the substrate field.