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    METHOD OF ENABLING SEAMLESS COBALT GAP-FILL
    1.
    发明申请
    METHOD OF ENABLING SEAMLESS COBALT GAP-FILL 有权
    实现无缝煤覆盖的方法

    公开(公告)号：US20150093891A1

    公开(公告)日：2015-04-02

    申请号：US14482601

    申请日：2014-09-10

    Applicant: Applied Materials, Inc.

    Inventor： Bhushan N. ZOPE ,  Avgerinos V. GELATOS ,  Bo ZHENG ,  Yu LEI ,  Xinyu FU ,  Srinivas GANDIKOTA ,  Sang Ho YU ,  Mathew ABRAHAM

    IPC: H01L21/768

    CPC classification number: H01L21/76877 ,  C23C16/18 ,  H01L21/2855 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76879 ,  H01L21/76883

    Abstract: Methods for depositing a metal layer in a feature definition of a semiconductor device are provided. In one implementation, a method for depositing a metal layer for forming a semiconductor device is provided. The method comprises performing a cyclic metal deposition process to deposit a metal layer on a substrate and annealing the metal layer disposed on the substrate. The cyclic metal deposition process comprises exposing the substrate to a deposition precursor gas mixture to deposit a portion of the metal layer on the substrate, exposing the portion of the metal layer to either a plasma treatment process or hydrogen annealing process and repeating the exposing the substrate to a deposition precursor gas mixture and exposing the portion of the metal layer to either a plasma treatment process or hydrogen annealing process until a predetermined thickness of the metal layer is achieved.

    Abstract translation: 提供了在半导体器件的特征定义中沉积金属层的方法。 在一个实施方案中，提供了一种用于沉积用于形成半导体器件的金属层的方法。 该方法包括进行循环金属沉积工艺以将金属层沉积在衬底上并使设置在衬底上的金属层退火。 循环金属沉积工艺包括将衬底暴露于沉积前体气体混合物以将金属层的一部分沉积在衬底上，将金属层的一部分暴露于等离子体处理工艺或氢退火工艺中，并重复暴露衬底 到沉积前体气体混合物并将金属层的该部分暴露于等离子体处理工艺或氢气退火工艺中，直到达到金属层的预定厚度。

    POST DEPOSITION TREATMENTS FOR CVD COBALT FILMS
    2.
    发明申请
    POST DEPOSITION TREATMENTS FOR CVD COBALT FILMS 有权
    用于CVD钴薄膜的后沉积处理

    公开(公告)号：US20140011354A1

    公开(公告)日：2014-01-09

    申请号：US13956969

    申请日：2013-08-01

    Applicant: Applied Materials, Inc.

    Inventor： Yu LEI ,  Xinyu FU ,  Anantha SUBRAMANI ,  Seshadri GANGULI ,  Srinivas GANDIKOTA

    IPC: H01L21/02

    CPC classification number: H01L21/02697 ,  B82Y40/00 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/7681 ,  H01L21/76834 ,  H01L21/76846 ,  H01L21/7685 ,  H01L21/76856 ,  H01L21/76858 ,  H01L21/76862 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76877 ,  H01L21/76885 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Embodiments of the invention provide methods for forming materials on a substrate used for metal gate and other applications. In one embodiment, a method includes forming a cobalt stack over a barrier layer disposed on a substrate by depositing a cobalt layer during a deposition process, exposing the cobalt layer to a plasma to form a plasma-treated cobalt layer during a plasma process, and repeating the cobalt deposition process and the plasma process to form the cobalt stack containing a plurality of plasma-treated cobalt layers. The method further includes exposing the cobalt stack to an oxygen source gas to form a cobalt oxide layer from an upper portion of the cobalt stack during a surface oxidation process and heating the remaining portion of the cobalt stack to a temperature within a range from about 300° C. to about 500° C. to form a crystalline cobalt film during a thermal annealing crystallization process.

    Abstract translation: 本发明的实施例提供了在用于金属栅极和其它应用的基板上形成材料的方法。 在一个实施例中，一种方法包括通过在沉积工艺期间沉积钴层而在设置在衬底上的势垒层上形成钴堆叠，在等离子体工艺期间将钴层暴露于等离子体以形成等离子体处理的钴层，以及 重复钴沉积工艺和等离子体工艺以形成含有多个等离子体处理的钴层的钴堆。 该方法还包括将钴堆叠暴露于氧源气体，以在表面氧化过程期间从钴堆叠的上部形成钴氧化物层，并将钴堆叠的剩余部分加热至约300 约500℃，以在热退火结晶过程中形成结晶钴膜。

    Method for Gapfill
    5.
    发明公开
    Method for Gapfill 审中-公开

    公开(公告)号：US20240178062A1

    公开(公告)日：2024-05-30

    申请号：US18083075

    申请日：2022-12-16

    Applicant: Applied Materials, Inc.

    Inventor： Yi XU ,  Yu LEI ,  Aixi ZHANG ,  Rongjun WANG

    IPC: H01L21/768 ,  H01L21/285

    CPC classification number: H01L21/76877 ,  H01L21/28556

    Abstract: A method of gap fill may include depositing a sacrificial Si layer in an opening of a feature and on a field of a substrate. In addition, the method may include depositing a metal layer in the opening and on the field, where at least a portion of the sacrificial Si layer is replaced with the metal layer. The method may also include depositing a metal gapfill material in the opening and on the field directly over the metal layer, where the metal gapfill material completely fills the opening.

    Purge Ring for Reduced Substrate Backside Deposition
    10.
    发明公开
    Purge Ring for Reduced Substrate Backside Deposition 审中-公开

    公开(公告)号：US20240018648A1

    公开(公告)日：2024-01-18

    申请号：US18220408

    申请日：2023-07-11

    Applicant: Applied Materials, Inc.

    Inventor： Geraldine VASQUEZ ,  Yi XU ,  Dien-yeh WU ,  Aixi ZHANG ,  Jallepally RAVI ,  Yu LEI

    IPC: C23C16/44 ,  H01J37/32 ,  C23C16/458

    CPC classification number: C23C16/4408 ,  H01J37/32798 ,  C23C16/4586 ,  H01J2237/3321

    Abstract: Embodiments of a purge ring for use in a process chamber are provided herein. In some embodiments, a purge ring includes: an annular body having an inner portion and an outer portion, wherein the inner portion includes an inner surface of the annular body, the inner surface comprising a first inner sidewall, a second inner sidewall, and a third inner sidewall, wherein the inner portion has an upper inner notch that defines the first inner sidewall and a lower inner notch that defines the second inner sidewall, wherein a third inner sidewall is disposed between the first inner sidewall and the second inner sidewall, and wherein the first inner sidewall and the second inner sidewall are disposed radially outward of the third inner sidewall.

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