公开(公告)号：US20210371972A1

公开(公告)日：2021-12-02

申请号：US16889017

申请日：2020-06-01

Applicant: APPLIED MATERIALS, INC.

Inventor： Xiangjin XIE ,  Carmen LEAL CERVANTES ,  Feng CHEN ,  Lu CHEN ,  Wenjing XU ,  Aravind KAMATH ,  Cheng-Hsiung Matthew TSAI ,  Tae Hong HA ,  Alexander JANSEN ,  Xianmin TANG

IPC: C23C14/56 ,  H01L21/02 ,  H01L21/67 ,  H01J37/32

Abstract: Methods and apparatus for processing a substrate include cleaning and self-assembly monolayer (SAM) formation for subsequent reverse selective atomic layer deposition. An apparatus may include a process chamber with a processing volume and a substrate support including a pedestal, a remote plasma source fluidly coupled to the process chamber and configured to produce radicals or ionized gas mixture with radicals that flow into the processing volume to remove residue or oxides from a surface of the substrate, a first gas delivery system with a first ampoule configured to provide at least one first chemical into the processing volume to produce a SAM on the surface of the substrate, a heating system located in the pedestal and configured to heat a substrate by flowing gas on a backside of the substrate, and a vacuum system fluidly coupled to the process chamber and configured to control heating of the substrate.

公开(公告)号：US20240183028A1

公开(公告)日：2024-06-06

申请号：US18442234

申请日：2024-02-15

Applicant: Applied Materials, Inc.

Inventor： Xiangjin XIE ,  Carmen LEAL CERVANTES ,  Feng CHEN ,  Lu CHEN ,  Wenjing XU ,  Aravind KAMATH ,  Cheng-Hsiung Matthew TSAI ,  Tae Hong HA ,  Alexander JANSEN ,  Xianmin TANG

IPC: C23C14/56 ,  H01J37/32 ,  H01L21/02 ,  H01L21/67

CPC classification number: C23C14/564 ,  H01J37/32082 ,  H01L21/02043 ,  H01L21/67017 ,  H01J2237/022

Abstract: Methods and apparatus for processing a substrate include cleaning and self-assembly monolayer (SAM) formation for subsequent reverse selective atomic layer deposition. An apparatus may include a process chamber with a processing volume and a substrate support including a pedestal, a remote plasma source fluidly coupled to the process chamber and configured to produce radicals or ionized gas mixture with radicals that flow into the processing volume to remove residue or oxides from a surface of the substrate, a first gas delivery system with a first ampoule configured to provide at least one first chemical into the processing volume to produce a SAM on the surface of the substrate, a heating system located in the pedestal and configured to heat a substrate by flowing gas on a backside of the substrate, and a vacuum system fluidly coupled to the process chamber and configured to control heating of the substrate.

公开(公告)号：US20220099426A1

公开(公告)日：2022-03-31

申请号：US17530538

申请日：2021-11-19

Applicant: Applied Materials, Inc.

Inventor： Tomoharu MATSUSHITA ,  Aravind KAMATH ,  Jallepally RAVI ,  Cheng-Hsiung TSAI ,  Hiroyuki TAKAHAMA

IPC: G01B5/004 ,  H01L21/683 ,  H01L21/68

Abstract: Methods and apparatus for substrate position calibration for substrate supports in substrate processing systems are provided herein. In some embodiments, a method for positioning a substrate on a substrate support includes: obtaining a plurality of backside pressure values corresponding to a plurality of different substrate positions on a substrate support by repeatedly placing a substrate in a position on the substrate support, and vacuum chucking the substrate to the substrate support and measuring a backside pressure; and analyzing the plurality of backside pressure values to determine a calibrated substrate position.

公开(公告)号：US20160192444A1

公开(公告)日：2016-06-30

申请号：US14634711

申请日：2015-02-27

Applicant: APPLIED MATERIALS, INC.

Inventor： TOMOHARU MATSUSHITA ,  Jallepally RAVI ,  Cheng-Hsiung TSAI ,  Aravind KAMATH ,  Xiaoxiong YUAN ,  Manjunatha KOPPA

IPC: H05B3/26 ,  H05B3/12

CPC classification number: H05B3/26 ,  H01L21/67103 ,  H05B2203/037

Abstract: Embodiments of substrate supports are provided herein. In some embodiments, a substrate support may include a body having a support surface; and a first heater disposed within the body and having a first heating coil and multiple heating zones, wherein a pitch of windings of the first heating coil vary among each of the multiple heating zones to define a predetermined heating ratio between the multiple heating zones.

Abstract translation: 本文提供了基板支撑件的实施例。 在一些实施例中，衬底支撑件可以包括具有支撑表面的主体; 以及第一加热器，其设置在所述主体内并且具有第一加热线圈和多个加热区域，其中所述第一加热线圈的绕组间距在每个所述多个加热区域中变化以限定所述多个加热区域之间的预定加热比。