公开(公告)号：US20250086356A1

公开(公告)日：2025-03-13

申请号：US18244113

申请日：2023-09-08

Applicant: Applied Materials, Inc.

Inventor： Adolph Miller ALLEN ,  Karthik RAMANATHAN ,  Girish VENKATACHALAPATHY ,  Umesh M. KELKAR ,  Kasturi Tulashidas SARANG ,  Yimeng LYU ,  Weize HU ,  Ying TENG ,  Sejune CHEON ,  Shiqi DONG ,  Paul Gerard KIELY ,  Milan PRAKASH

IPC: G06F30/27 ,  G05B19/418

Abstract: A method, apparatus, and system for controlling a multi-chamber system configured to process substrates are described herein. In some embodiments, a method comprises automatically determining, by each digital twin device a first data set associated with a corresponding process chamber of process chambers. The plurality of digital twin devices captures and models characteristics and processes of process chambers and generates control inputs for controlling the process chambers or processes executed by the chambers during the manufacturing of substrates. The method further comprises automatically generating, by each digital twin device, a second data set that comprises control inputs, and automatically transmitting the second data set to the process chamber.

公开(公告)号：US20210335586A1

公开(公告)日：2021-10-28

申请号：US16855496

申请日：2020-04-22

Applicant: APPLIED MATERIALS, INC.

Inventor： Tom H. YU ,  Wei Min CHAN ,  Peiqi WANG ,  Kai WU ,  Adolph Miller ALLEN ,  Kazuya DAITO

IPC: H01J37/32 ,  B08B5/00 ,  B08B7/00

Abstract: Methods and apparatus for cleaning a showerhead are provided. For example, the methods includes moving a substrate support including a heater disposed therein from a substrate processing position a first distance away from the showerhead to a cleaning position a second distance away from the showerhead, wherein the second distance is less than the first distance; heating the showerhead using the heater disposed in the substrate support to a predetermined temperature; at least one of supplying at least one cleaning gas to the processing chamber to form a plasma or supplying the plasma from a remote plasma source; and providing a predetermined pressure within an inner volume of the processing chamber and maintaining the plasma within the inner volume of the processing chamber while heating the showerhead to the predetermined temperature.

公开(公告)号：US20170253959A1

公开(公告)日：2017-09-07

申请号：US15448996

申请日：2017-03-03

Applicant: APPLIED MATERIALS, INC.

Inventor： Xiaodong WANG ,  Joung Joo LEE ,  Fuhong ZHANG ,  Martin Lee RIKER ,  Keith A. MILLER ,  William FRUCHTERMAN ,  Rongjun WANG ,  Adolph Miller ALLEN ,  Shouyin ZHANG ,  Xianmin TANG

IPC: C23C14/35 ,  H01J37/34 ,  C23C14/54

CPC classification number: C23C14/351 ,  C23C14/54 ,  H01J37/3405 ,  H01J37/3447 ,  H01J37/3455 ,  H01J37/3458 ,  H01L21/2855 ,  H01L21/76871 ,  H01L21/76879

Abstract: Methods and apparatus for controlling the ion fraction in physical vapor deposition processes are disclosed. In some embodiments, a process chamber for processing a substrate having a given diameter includes: an interior volume and a target to be sputtered, the interior volume including a central portion and a peripheral portion; a rotatable magnetron above the target to form an annular plasma in the peripheral portion; a substrate support disposed in the interior volume to support a substrate having the given diameter; a first set of magnets disposed about the body to form substantially vertical magnetic field lines in the peripheral portion; a second set of magnets disposed about the body and above the substrate support to form magnetic field lines directed toward a center of the support surface; a first power source to electrically bias the target; and a second power source to electrically bias the substrate support.

公开(公告)号：US20160244874A1

公开(公告)日：2016-08-25

申请号：US15050409

申请日：2016-02-22

Applicant: APPLIED MATERIALS, INC.

Inventor： Zhenbin GE ,  Vivek GUPTA ,  Adolph Miller ALLEN ,  Ryan HANSON

IPC: C23C14/34 ,  C23C14/06 ,  C23C14/54 ,  H03J3/02

CPC classification number: C23C14/345 ,  C23C14/54 ,  H01J37/32174 ,  H01J37/32183 ,  H03J7/04 ,  H03L7/06

Abstract: In some embodiments a method of depositing a metal-containing layer atop a substrate disposed in a physical vapor deposition (PVD) chamber includes: providing a plasma forming gas to a processing region of the PVD chamber; providing a first amount of RF power to a target assembly disposed opposite the substrate to form a plasma within the processing region of the PVD chamber; sputtering source material from the target assembly to deposit a metal-containing layer onto the substrate, wherein the source material is at a first erosion state; and tuning an auto capacitance tuner coupled to a substrate support while sputtering source material to maintain an ion energy at a surface of the substrate within a predetermined range as the target erodes from the first erosion state to a second erosion state.

Abstract translation: 在一些实施方案中，在布置在物理气相沉积（PVD）室中的衬底上沉积含金属层的方法包括：向PVD室的处理区域提供等离子体形成气体; 向与所述衬底相对设置的目标组件提供第一量的RF功率，以在所述PVD室的所述处理区域内形成等离子体; 从所述靶组件溅射源材料以将含金属的层沉积到所述基底上，其中所述源材料处于第一侵蚀状态; 以及调谐耦合到衬底支撑件的自动电容调谐器，同时溅射源材料，以在目标从第一侵蚀状态侵蚀到第二侵蚀状态时将基板表面处的离子能量保持在预定范围内。

公开(公告)号：US20250086357A1

公开(公告)日：2025-03-13

申请号：US18244126

申请日：2023-09-08

Applicant: Applied Materials, Inc.

Inventor： Adolph Miller ALLEN ,  Karthik RAMANATHAN ,  Girish VENKATACHALAPATHY ,  Umesh M. KELKAR ,  Kasturi Tulashidas SARANG ,  Yimeng LYU ,  Weize HU ,  Ying TENG ,  Sejune CHEON ,  Shiqi DONG ,  Paul Gerard KIELY ,  Milan PRAKASH

IPC: G06F30/27 ,  G05B19/418

Abstract: A method, apparatus, and system for controlling a multi-chamber process system for substrate processing are described herein. In some embodiments, a method comprises determining, by each digital twin device, of a plurality of digital twin devices, a first data set associated with at least one process chamber of a plurality of chamber processes, and the corresponding processes for processing a plurality of substrates. Each digital twin device comprises one or more computational models. The first data set comprises measurements reported by probes or sensors within the at least one chamber process, or data collected and reported by internal sensors of the digital twin device. The method further automatically generating, by each digital twin device a second data set based on, at least in part, the first data set, and by executing one or more computational models of the digital twin device.

公开(公告)号：US20250085699A1

公开(公告)日：2025-03-13

申请号：US18244104

申请日：2023-09-08

Applicant: Applied Materials, Inc.

Inventor： Adolph Miller ALLEN ,  Karthik RAMANATHAN ,  Girish VENKATACHALAPATHY ,  Umesh M. KELKAR ,  Kasturi Tulashidas SARANG ,  Yimeng LYU ,  Weize HU ,  Ying TENG ,  Sejune CHEON ,  Shiqi DONG ,  Paul Gerard KIELY ,  Milan PRAKASH

IPC: G05B19/418 ,  H01L21/67

Abstract: A method, apparatus, and system for controlling a physical twin chamber configured to process substrates are described herein. In some embodiments, a method comprises determining, by a digital twin device, characteristics of a physical twin chamber and generating control inputs for controlling the physical twin chamber. The digital twin device comprises one or more computational models for determining the characteristics of the physical twin and for generating the control inputs. The digital twin device determines a first data set associated with the physical twin chamber. The first data set comprises process data collected by sensors configured to measure attributes of the physical twin chamber. Based on the first data, the digital twin device automatically generates a second data set based on the generated control inputs and transmits the second data set to the physical twin chamber for controlling the process performed on the substrates by the physical twin chamber.

公开(公告)号：US20190127842A1

公开(公告)日：2019-05-02

申请号：US15797361

申请日：2017-10-30

Applicant: APPLIED MATERIALS, INC.

Inventor： Viachslav BABAYAN ,  Adolph Miller ALLEN ,  Bhargav CITLA ,  Ronald D. DEDORE ,  Vanessa FAUNE ,  Zhong Qiang HUA ,  Vaibhav SONI ,  Menglu WU

IPC: C23C14/34 ,  C23C14/06 ,  C23C14/35 ,  H01J37/34 ,  H01L21/02

Abstract: An apparatus and method of forming a dielectric film layer using a physical vapor deposition process include delivering a sputter gas to a substrate positioned in a processing region of a process chamber, the process chamber having a dielectric-containing sputter target, delivering an energy pulse to the sputter gas to create a sputtering plasma, the sputtering plasma being formed by energy pulses having an average voltage between about 800 volts and about 2000 volts and an average current between about 50 amps and about 300 amps at a frequency which is less than 50 kHz and greater than 5 kHz and directing the sputtering plasma toward the dielectric-containing sputter target to form an ionized species comprising dielectric material sputtered from the dielectric-containing sputter target, the ionized species forming a dielectric-containing film on the substrate.

公开(公告)号：US20170002461A1

公开(公告)日：2017-01-05

申请号：US15201019

申请日：2016-07-01

Applicant: APPLIED MATERIALS, INC.

Inventor： William JOHANSON ,  Kirankumar SAVANDAIAH ,  Adolph Miller ALLEN ,  Xin WANG ,  Prashant PRABHU

IPC: C23C16/455

CPC classification number: C23C14/3407 ,  C23C14/564 ,  H01J37/32477 ,  H01J37/34 ,  H01J37/3488

Abstract: Embodiments of process kits and process chambers incorporating same are provided herein. In some embodiments, a process kit includes a deposition ring configured to be disposed on a substrate support designed to support a substrate having a given width, including: an annular band configured to rest on a lower ledge of the substrate support; an inner lip extending upwardly from an inner edge of the annular band, wherein an inner surface of the inner lip and an inner surface of the annular band together form a central opening having a width that is less than the given width, and wherein a depth between an upper surface of the annular band and an upper surface of the inner lip is between about 24 mm and about 38 mm; a channel disposed radially outward of the annular band; and an outer lip extending upwardly and disposed radially outward of the channel.

Abstract translation: 本文提供了具有加工套件和加工腔室的实施例。 在一些实施例中，处理套件包括沉积环，其被配置为设置在设计成支撑具有给定宽度的衬底的衬底支撑件上，包括：环形带，被配置为搁置在衬底支撑件的下凸缘上; 从所述环形带的内边缘向上延伸的内唇缘，其中所述内唇缘的内表面和所述环形带的内表面一起形成具有小于给定宽度的宽度的中心开口，并且其中， 在环形带的上表面和内唇缘的上表面之间的距离在约24mm和约38mm之间; 设置在所述环形带的径向外侧的通道; 以及向外延伸并设置在通道的径向外侧的外唇缘。

公开(公告)号：US20160260896A1

公开(公告)日：2016-09-08

申请号：US15157120

申请日：2016-05-17

Applicant: Applied Materials, Inc.

Inventor： Roman GOUK ,  Steven VERHAVERBEKE ,  Alexander KONTOS ,  Adolph Miller ALLEN ,  Kevin MORAES

IPC: H01L43/12

CPC classification number: H01L43/12 ,  G11B5/746 ,  G11B5/855 ,  G11C11/16 ,  H01F41/34 ,  H01L21/2855 ,  H01L21/3081

Abstract: A method and apparatus for forming a magnetic layer having a pattern of magnetic properties on a substrate is described. The method includes using a metal nitride hardmask layer to pattern the magnetic layer by plasma exposure. The metal nitride layer is patterned using a nanoimprint patterning process with a silicon oxide pattern negative material. The pattern is developed in the metal nitride using a halogen and oxygen containing remote plasma, and is removed after plasma exposure using a caustic wet strip process. All processing is done at low temperatures to avoid thermal damage to magnetic materials.