公开(公告)号：US09520175B2

公开(公告)日：2016-12-13

申请号：US14532533

申请日：2014-11-04

Applicant: TDK CORPORATION

Inventor： Tatsuo Shibata ,  Masashi Sahashi

IPC: G11B5/02 ,  G11C11/16 ,  G11B5/65 ,  G11B5/66 ,  G11C11/15 ,  H01F10/32 ,  G11B5/012

CPC classification number: G11C11/1677 ,  G11B5/012 ,  G11B5/02 ,  G11B5/65 ,  G11B5/66 ,  G11C11/15 ,  G11C11/161 ,  G11C11/1675 ,  H01F10/3218 ,  H01F10/3272 ,  H01F10/3286

Abstract: A magnetization controlling element includes a ferromagnetic material layer, an exchange coupling adjustment layer, an antiferromagnetic material layer, an electrode layer, a magnetic field applying mechanism which applies a magnetic field to the antiferromagnetic material layer, and an electric field applying mechanism which applies an electric field to the antiferromagnetic material layer. The antiferromagnetic material layer contains an antiferromagnetic material or ferrimagnetic material having a magnetoelectric effect, the ferromagnetic material layer includes a perpendicular magnetization film having a magnetization component perpendicular to the film surface, the ferromagnetic material layer includes a ferromagnetic material layer that is magnetically connected, through exchange coupling, to the antiferromagnetic material layer. The exchange coupling adjustment layer has a function of adjusting exchange coupling between the ferromagnetic material layer and the antiferromagnetic material layer.

Abstract translation: 磁化控制元件包括铁磁材料层，交换耦合调节层，反铁磁材料层，电极层，向反铁磁材料层施加磁场的磁场施加机构，以及施加机构 电场到反铁磁材料层。 反铁磁材料层含有具有磁电效应的反铁磁材料或铁磁材料，铁磁材料层包括具有垂直于膜表面的磁化分量的垂直磁化膜，铁磁材料层包括磁性连接的铁磁材料层，通过 交换耦合到反铁磁材料层。 交换耦合调整层具有调节铁磁材料层和反铁磁材料层之间的交换耦合的功能。

公开(公告)号：US09397406B2

公开(公告)日：2016-07-19

申请号：US13883309

申请日：2011-10-27

Applicant: Francois Grange ,  Christophe Delaveaud ,  Bernard Viala

Inventor： Francois Grange ,  Christophe Delaveaud ,  Bernard Viala

IPC: H01Q1/38 ,  H01Q15/00 ,  H01F10/32

CPC classification number: H01Q15/0013 ,  H01F10/3218 ,  H01Q15/006 ,  Y10T428/2495

Abstract: An artificial magnetic conductor having a surface impedance greater than 100Ω, includes a ground plane, and a frequency-selective surface that is transparent for certain wavelengths and reflective for a range of wavelengths. The frequency-selective surface includes an array of conductive resonant elements arranged alongside one another in at least two different directions parallel to the ground plane. Each of these conductive resonant elements includes a sub-layer of ferromagnetic material having a relative permeability greater than 10 at a frequency of 2 GHz and having a thickness less than the skin thickness of the ferromagnetic material.

Abstract translation: 具有大于100Ω和OHgr的表面阻抗的人造磁性导体包括接地平面和对于某些波长是透明的并且对于一定波长范围是反射的频率选择表面。 频率选择表面包括在平行于接地平面的至少两个不同方向上彼此并排布置的导电谐振元件阵列。 这些导电谐振元件中的每一个包括在2GHz的频率下具有大于10的相对磁导率并且具有小于铁磁材料的表皮厚度的厚度的铁磁材料的子层。

公开(公告)号：US20150102108A1

公开(公告)日：2015-04-16

申请号：US14386926

申请日：2013-03-22

Applicant: Universitaet Kassel

Inventor： Arno Ehresmann ,  Dieter Engel

IPC: G07D7/04 ,  H01F41/14 ,  G06K7/08 ,  G06K19/06 ,  G06K1/12

CPC classification number: G07D7/04 ,  A61J1/035 ,  A61J2205/60 ,  B32B15/00 ,  B32B15/04 ,  B32B15/043 ,  B32B15/12 ,  B32B2250/05 ,  B32B2307/20 ,  B32B2605/00 ,  B42D25/00 ,  B42D25/29 ,  B42D25/369 ,  B42D2033/16 ,  G06K1/12 ,  G06K7/082 ,  G06K19/06196 ,  H01F10/3218 ,  H01F10/3268 ,  H01F41/14 ,  H01F41/308

Abstract: The invention relates to a magnetic multilayer system (1) which is arranged on a substrate (6) which is made of a material from the group consisting of a plastic from the group of polymers, metal, metal alloy and paper and/or which is at least one element from the group consisting of a document and packaging. The invention further relates to packaging which comprises such a magnetic multilayer system (1). According to the invention, the multilayer system (1) is used for proving the authenticity of an object. Likewise according to the invention are a method for marking an object with a magnetic multilayer system for proving the authenticity of an object and a method for reading a magnetic multilayer system for proving the authenticity of an object.

Abstract translation: 本发明涉及一种磁性多层系统（1），其被布置在基板（6）上，该基板（6）由来自聚合物，金属，金属合金和纸张的塑料组成的组和/或由 来自由文件和包装组成的组中的至少一个元素。 本发明还涉及包括这种磁性多层系统（1）的包装。 根据本发明，多层系统（1）用于证明物体的真实性。 同样地，根据本发明，是用用于证明物体的真实性的磁性多层系统来标记物体的方法和用于读取用于证明物体的真实性的磁性多层系统的方法。

公开(公告)号：US20140169084A1

公开(公告)日：2014-06-19

申请号：US14099174

申请日：2013-12-06

Applicant: HITACHI, LTD.

Inventor： Joerg WUNDERLICH ,  Xavier MARTI ,  Tomas JUNGWIRTH

IPC: H01L43/02 ,  G11C11/16

CPC classification number: H01L43/02 ,  G11C11/15 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C2213/74 ,  G11C2213/79 ,  H01F10/002 ,  H01F10/3218 ,  H01L43/08

Abstract: A memory device is described. The memory device comprises an antiferromagnet. The device may comprise an insulator and an electrode arranged in a tunnel junction configuration. Alternatively, the device may comprise first and second contacts to the antiferromagnet for measuring ohmic resistance of the antiferromagnet. The antiferromagnet is not coupled to any ferromagnet. The state of the antiferromagnet can be set by heating the junction to a temperature at or above a critical temperature at which is possible to re-orientate magnetic moments in the antiferromagnet, applying an external magnetic field and then cooling the antiferromagnet to a temperature below the critical temperature.

Abstract translation: 描述存储器件。 存储器件包括反铁磁体。 该器件可以包括布置成隧道结构造的绝缘体和电极。 或者，该装置可以包括用于测量反铁磁体的欧姆电阻的反铁磁体的第一和第二接触。 反铁磁体不与任何铁磁体耦合。 反铁磁体的状态可以通过将接合点加热到等于或高于临界温度的温度来设定，在该温度下可以重新定向反铁磁体中的磁矩，施加外部磁场，然后将反铁磁体冷却到低于 临界温度。

公开(公告)号：US20120242416A1

公开(公告)日：2012-09-27

申请号：US13070249

申请日：2011-03-23

Applicant: Romney R. Katti

Inventor： Romney R. Katti

IPC: H01S1/00 ,  H01F41/14 ,  H01F41/22 ,  H01F1/01

CPC classification number: H01F41/302 ,  B82Y25/00 ,  B82Y40/00 ,  H01F10/3218 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/329 ,  H01L43/08

Abstract: A magnetic device is provided in one example that comprises a free layer having a magnetic anisotropy. The magnetic anisotropy is at least partially non-uniform. The magnetic device further comprises an antiferromagnetic layer adjacent to and weakly exchange coupled with the free layer, wherein the weak exchange coupling reduces the non-uniformity of the magnetic anisotropy of the free layer.

Abstract translation: 在包括具有磁各向异性的自由层的一个实例中提供磁性装置。 磁各向异性至少部分不均匀。 磁性装置还包括与自由层相邻并且弱交换的反铁磁层，其中弱交换耦合减小了自由层的磁各向异性的不均匀性。

公开(公告)号：US08228717B2

公开(公告)日：2012-07-24

申请号：US13012661

申请日：2011-01-24

Applicant: Jun Liu ,  Gurtej Sandhu

Inventor： Jun Liu ,  Gurtej Sandhu

IPC: G11C11/00

CPC classification number: G11C11/1675 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/1284 ,  G11C11/16 ,  H01F10/3218 ,  Y10S977/934

Abstract: Spin current generators and systems and methods for employing spin current generators. A spin current generator may be configured to generate a spin current polarized in one direction, or a spin current selectively polarized in two directions. The spin current generator may by employed in spintronics applications, wherein a spin current is desired.

Abstract translation: 自旋电流发生器和采用自旋电流发生器的系统和方法。 自旋电流发生器可以被配置为产生在一个方向上偏振的自旋电流，或者在两个方向上选择性地偏振的自旋电流。 自旋电流发生器可用于自旋电子学应用中，其中期望自旋电流。

公开(公告)号：US20110284977A1

公开(公告)日：2011-11-24

申请号：US13136194

申请日：2011-07-26

Applicant: Tai Min ,  Cheng Horng ,  Po Kang Wang

Inventor： Tai Min ,  Cheng Horng ,  Po Kang Wang

IPC: H01L29/82

CPC classification number: H01L43/08 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/3218 ,  H01F10/3272 ,  H01F41/307 ,  H01L43/12

Abstract: An MRAM array of MTJ memory cells is provided wherein each such cell is a layered MTJ structure located at an intersection of a word and bit line and has a small circular horizontal cross-section of 1.0 microns or less in diameter and wherein the ferromagnetic free layer of each such cell has a magnetic anisotropy produced by a magnetic coupling with a thin antiferromagnetic layer that is formed on the free layer. The array of MTJ memory cells so provided is far less sensitive to shape irregularities and edge defects of individual cells than arrays of the prior art.

Abstract translation: 提供了MTJ存储器单元的MRAM阵列，其中每个这样的单元是位于字和位线的交叉点处的分层MTJ结构，并且具有直径为1.0微米或更小的小的圆形水平横截面，并且其中铁磁自由层 每个这样的电池具有由形成在自由层上的薄的反铁磁性层的磁耦合产生的磁各向异性。 如此提供的MTJ存储器单元的阵列比现有技术的阵列对单个单元的形状不规则和边缘缺陷的敏感性差。

公开(公告)号：US20110116304A1

公开(公告)日：2011-05-19

申请号：US13012661

申请日：2011-01-24

Applicant: JUN LIU ,  GURTEJ SANDHU

Inventor： JUN LIU ,  GURTEJ SANDHU

IPC: G11C11/02

CPC classification number: G11C11/1675 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/1284 ,  G11C11/16 ,  H01F10/3218 ,  Y10S977/934

Abstract: Spin current generators and systems and methods for employing spin current generators. A spin current generator may be configured to generate a spin current polarized in one direction, or a spin current selectively polarized in two directions. The spin current generator may by employed in spintronics applications, wherein a spin current is desired.

Abstract translation: 自旋电流发生器和采用自旋电流发生器的系统和方法。 自旋电流发生器可以被配置为产生在一个方向上偏振的自旋电流，或者在两个方向上选择性地偏振的自旋电流。 自旋电流发生器可用于自旋电子学应用中，其中期望自旋电流。

公开(公告)号：US07767255B2

公开(公告)日：2010-08-03

申请号：US11602628

申请日：2006-11-20

Applicant: Bernard Rodmacq ,  Stéphane Landis ,  Bernard Dieny

Inventor： Bernard Rodmacq ,  Stéphane Landis ,  Bernard Dieny

IPC: B05D5/12 ,  G11B5/33 ,  G11B5/64 ,  G11B11/00 ,  G11B21/10 ,  G11B3/70 ,  G11B7/24

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G11B5/09 ,  G11B5/74 ,  G11B5/743 ,  G11B5/82 ,  G11B5/855 ,  G11C11/14 ,  H01F10/002 ,  H01F10/3218 ,  H01F10/3286 ,  H01F41/308

Abstract: An information storage medium with an array of laterally magnetised dots, as well as a process for producing this medium is disclosed.Each dot (2) contains at least one magnetic domain formed by a thin layer (4) of at least a magnetic material laterally covering this flat material and deposited at oblique incidence relative to the normal (z) to the plane (6) of the array. The invention applies in particular to computer hard drives.

Abstract translation: 公开了具有横向磁化点阵列的信息存储介质，以及用于生产该介质的方法。 每个点（2）包含至少一个由至少一个磁性材料的薄层（4）形成的磁畴，横向覆盖该平坦材料并相对于法线（z）以 数组。 本发明特别适用于计算机硬盘驱动器。

公开(公告)号：US20100080047A1

公开(公告)日：2010-04-01

申请号：US12242228

申请日：2008-09-30

Applicant: Jun Liu ,  Gurtej Sandhu

Inventor： Jun Liu ,  Gurtej Sandhu

IPC: H01L41/00 ,  G11C11/00

CPC classification number: G11C11/1675 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/1284 ,  G11C11/16 ,  H01F10/3218 ,  Y10S977/934

Abstract: Spin current generators and systems and methods for employing spin current generators. A spin current generator may be configured to generate a spin current polarized in one direction, or a spin current selectively polarized in two directions. The spin current generator may by employed in spintronics applications, wherein a spin current is desired.

Abstract translation: 自旋电流发生器和采用自旋电流发生器的系统和方法。 自旋电流发生器可以被配置为产生在一个方向上偏振的自旋电流，或者在两个方向上选择性地偏振的自旋电流。 自旋电流发生器可用于自旋电子学应用中，其中期望自旋电流。