公开(公告)号：US09343263B2

公开(公告)日：2016-05-17

申请号：US14656132

申请日：2015-03-12

申请人： Sumitomo Heavy Industries Ion Technology Co., Ltd.

发明人： Haruka Sasaki ,  Kazuhiro Watanabe ,  Hiroyuki Kariya

IPC分类号： H01J37/00 ,  H01J37/244 ,  H01J37/317

CPC分类号： H01J37/244 ,  H01J37/3171 ,  H01J2237/057 ,  H01J2237/24514 ,  H01J2237/24528 ,  H01J2237/31703

摘要： A beam energy measuring device in an ion implanter includes a parallelism measuring unit that measures a parallelism of an ion beam at a downstream of a beam collimator of the ion implanter and an energy calculating unit that calculates an energy of the ion beam from the measured parallelism. The ion implanter may further include a control unit that controls a high energy multistage linear acceleration unit based on the measured energy of the ion beam so that the ion beam has a target energy.

摘要翻译： 离子注入机中的光束能量测量装置包括平行度测量单元，其测量在离子注入机的光束准直器的下游处的离子束的平行度，以及能量计算单元，其计算来自所测量的平行度的离子束的能量 。 离子注入机还可以包括控制单元，其基于所测量的离子束的能量来控制高能量多级线性加速单元，使得离子束具有目标能量。

公开(公告)号：US09218938B2

公开(公告)日：2015-12-22

申请号：US14317650

申请日：2014-06-27

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Nai-Han Cheng

IPC分类号： H01J37/244 ,  H01J37/317

CPC分类号： H01J37/244 ,  H01J37/3171 ,  H01J2237/024 ,  H01J2237/24405 ,  H01J2237/24528 ,  H01J2237/24542

摘要： A beam monitoring device, method, and system is disclosed. An exemplary beam monitoring device includes a one dimensional (1D) profiler. The 1D profiler includes a Faraday having an insulation material and a conductive material. The beam monitoring device further includes a two dimensional (2D) profiler. The 2D profiler includes a plurality of Faraday having an insulation material and a conductive material. The plurality of Faraday of the 2D profiler are arranged in a pattern that is offset in a direction. The 1D profiler is coupled to a first end of the 2D profiler and extends beyond two adjacent outer edges of the 2D profiler. The beam monitoring device further includes a control arm. The control arm is operable to facilitate movement of the beam monitoring device in the direction.

摘要翻译： 公开了一种光束监测装置，方法和系统。 示例性束监测装置包括一维（1D）轮廓仪。 1D轮廓仪包括具有绝缘材料和导电材料的法拉第。 光束监测装置还包括二维（2D）轮廓仪。 2D轮廓仪包括具有绝缘材料和导电材料的多个法拉第。 2D轮廓仪的多个法拉第以一个方向偏移的图案排列。 1D轮廓仪耦合到2D轮廓仪的第一端并延伸超过2D轮廓仪的两个相邻的外边缘。 光束监视装置还包括控制臂。 控制臂可操作以便于沿着该方向的光束监视装置的移动。

公开(公告)号：US09177758B2

公开(公告)日：2015-11-03

申请号：US14564921

申请日：2014-12-09

申请人： Hermes Microvision Inc.

发明人： Zhongwei Chen ,  Jack Jau ,  Weiming Ren ,  Chiyan Kuan ,  Yixiang Wang ,  Xiaoli Guo ,  Feng Cao

IPC分类号： H01J37/26 ,  H01J37/28 ,  H01J37/22

CPC分类号： H01J37/261 ,  H01J37/226 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/063 ,  H01J2237/10 ,  H01J2237/24475 ,  H01J2237/24495 ,  H01J2237/24528 ,  H01J2237/2801 ,  H01J2237/2804 ,  H01J2237/2806 ,  H01J2237/2814

摘要： The present invention provides a dual-beam apparatus which employs the dark-field e-beam inspection method to inspect small particles on a surface of a sample such as wafer and mask with high throughput. The dual beam apparatus comprises two single-beam dark-field units placed in a same vacuum chamber and in two different orientations. The two single-beam dark-field units can perform the particle inspection separately or almost simultaneously by means of the alternately-scanning way. The invention also proposes a triple-beam apparatus for both inspecting and reviewing particles on a sample surface within the same vacuum chamber. The triple-beam apparatus comprises one foregoing dual-beam apparatus performing the particle inspection and one high-resolution SEM performing the particle review.

摘要翻译： 本发明提供一种双光束装置，其采用暗场电子束检查方法以高生产量检查诸如晶片和掩模的样品表面上的小颗粒。 双光束装置包括放置在相同真空室中并具有两个不同取向的两个单光束暗场单元。 两个单光束暗场单元可以通过交替扫描方式分别或几乎同时进行粒子检测。 本发明还提出了一种用于检查和检查在相同真空室内的样品表面上的颗粒的三光束装置。 三光束装置包括执行颗粒检查的一个前述双光束装置和执行颗粒检查的一个高分辨率SEM。

公开(公告)号：US20140341356A1

公开(公告)日：2014-11-20

申请号：US14361574

申请日：2012-11-26

申请人： KONINKLIJKE PHILIPS N.V.

发明人： Christoph Kurze

IPC分类号： A61B6/00

CPC分类号： A61B6/587 ,  A61B6/0492 ,  A61B6/08 ,  A61B6/4405 ,  A61B6/4411 ,  A61B6/4452 ,  A61B6/4464 ,  A61B6/461 ,  A61B6/547 ,  A61B6/585 ,  A61B6/588 ,  A61N5/1049 ,  A61N2005/105 ,  A61N2005/1051 ,  G02B7/005 ,  G02B27/64 ,  H01J37/22 ,  H01J2237/1501 ,  H01J2237/20292 ,  H01J2237/24528 ,  H01J2237/2482 ,  H04B10/22

摘要： An X-ray imaging system comprises an X-ray tube (6), a ceiling suspension (2) for the X-ray tube, a detector trolley (12) with an X-ray detector (10) mounted thereon, an active sensor matrix (24), an optical indication unit (20) and a control unit (26). The active sensor matrix (24) is fixedly mounted on the ceiling suspension (2), the optical indication unit (20) is fixedly mounted to the detector trolley (12) and is adapted for emitting an optical indication (22) onto the active sensor matrix (24). The control unit (26) is connected to the active sensor matrix (24) and is adapted for acquiring the position of the optical indication (22) on the active sensor matrix (24) and to create control signals for aligning the detector trolley position and the ceiling suspension position relative to each other such that the optical indication is present on a predetermined spot on the active sensor matrix. This eliminates the need of a mechanically fixed arm carrying a detector unit at a fixed spatial relationship to an X-ray arm as the detector and the X-ray tube are be linked by a position following process.

摘要翻译： X射线成像系统包括X射线管（6），用于X射线管的天花板悬挂（2），安装有X射线检测器（10）的检测器手推车（12），主动传感器 矩阵（24），光学指示单元（20）和控制单元（26）。 有源传感器矩阵（24）固定地安装在天花板悬架（2）上，光学指示单元（20）固定地安装到检测器手推车（12）上，并且适于将光学指示（22）发射到主动传感器 矩阵（24）。 控制单元（26）连接到主动传感器矩阵（24），并且适于获取有源传感器矩阵（24）上的光学指示（22）的位置，并且产生用于使检测器台车位置和 天花板悬挂位置相对于彼此使得光学指示存在于有源传感器矩阵上的预定点上。 这样当检测器和X射线管通过位置跟随过程连接时，这消除了对机械固定的臂承载与X射线臂固定空间关系的检测器单元的需要。

公开(公告)号：US08889503B2

公开(公告)日：2014-11-18

申请号：US14104289

申请日：2013-12-12

申请人： Panasonic Corporation

发明人： Kenji Yoneda

IPC分类号： H01L21/336 ,  H01L21/265 ,  H01L21/687 ,  H01L29/66 ,  H01L29/04

CPC分类号： H01L21/26513 ,  H01J2237/20207 ,  H01J2237/24528 ,  H01J2237/31701 ,  H01L21/26586 ,  H01L21/68764 ,  H01L21/68771 ,  H01L29/045 ,  H01L29/6656 ,  H01L29/6659

摘要： Provided is a method for manufacturing a semiconductor device which includes, on a wafer which has a notch, a plurality of transistors parallel with and perpendicular to a notch direction extending between the center of the wafer and the notch, the method including: preparing the wafer having the front surface which has Off angle of at least 2 degrees and at most 2.8 degrees from plane in a direction in which Twist angle relative to the notch direction is at least 12.5 degrees and at most 32.5 degrees; and doping impurities into the front surface of the wafer in a direction perpendicular to the front surface.

摘要翻译： 本发明提供一种制造半导体器件的方法，该半导体器件在具有凹口的晶片上包括与在晶片的中心和凹口之间延伸的切口方向平行并垂直的多个晶体管，该方法包括：准备晶片 其前表面在相对于切口方向的扭转角至少为12.5度且至多32.5度的方向上具有至少2度且至多2.8度的Off角度; 并且在垂直于前表面的方向上将杂质掺杂到晶片的前表面。

公开(公告)号：US08766207B2

公开(公告)日：2014-07-01

申请号：US13241392

申请日：2011-09-23

申请人： Chih-Hong Hwang ,  Chun-Lin Chang ,  Nai-Han Cheng ,  Chi-Ming Yang ,  Chin-Hsiang Lin

发明人： Chih-Hong Hwang ,  Chun-Lin Chang ,  Nai-Han Cheng ,  Chi-Ming Yang ,  Chin-Hsiang Lin

IPC分类号： H01J37/244

CPC分类号： H01J37/244 ,  H01J37/3171 ,  H01J2237/024 ,  H01J2237/24405 ,  H01J2237/24528 ,  H01J2237/24542

摘要： A beam monitoring device, method, and system is disclosed. An exemplary beam monitoring device includes a one dimensional (1D) profiler. The 1D profiler includes a Faraday having an insulation material and a conductive material. The beam monitoring device further includes a two dimensional (2D) profiler. The 2D profiler includes a plurality of Faraday having an insulation material and a conductive material. The beam monitoring device further includes a control arm. The control arm is operable to facilitate movement of the beam monitoring device in a longitudinal direction and to facilitate rotation of the beam monitoring device about an axis.

摘要翻译： 公开了一种光束监测装置，方法和系统。 示例性束监测装置包括一维（1D）轮廓仪。 1D轮廓仪包括具有绝缘材料和导电材料的法拉第。 光束监测装置还包括二维（2D）轮廓仪。 2D轮廓仪包括具有绝缘材料和导电材料的多个法拉第。 光束监视装置还包括控制臂。 控制臂可操作以便于在纵向方向上使光束监视装置的移动，并且便于光束监视装置围绕轴的旋转。

公开(公告)号：US08748844B2

公开(公告)日：2014-06-10

申请号：US13605580

申请日：2012-09-06

申请人： Haruko Akutsu

发明人： Haruko Akutsu

IPC分类号： G01N23/00 ,  H01J37/26 ,  H01J37/24 ,  H01J37/28 ,  H01J37/244 ,  G01N23/22 ,  G01N23/225

CPC分类号： H01J37/263 ,  G01N23/22 ,  G01N23/2251 ,  G01N2223/6116 ,  H01J37/24 ,  H01J37/244 ,  H01J37/26 ,  H01J37/28 ,  H01J2237/221 ,  H01J2237/24485 ,  H01J2237/24528 ,  H01J2237/24585 ,  H01J2237/2804 ,  H01J2237/2805 ,  H01J2237/2806 ,  H01J2237/2814

摘要： In accordance with an embodiment, a sample analyzing apparatus includes a charged beam generating unit, a detecting unit, and an analyzing unit. The charged beam generating unit is configured to generate a charged beam and apply the charged beam to a sample. The detecting unit is configured to detect charged particles and then output a signal, the charged particles being generated from the sample by the application of the charged beam in a manner depending on a three-dimensional structure and material characteristics of the sample. The analyzing unit is configured to process the signal to analyze the sample.

摘要翻译： 根据实施例，样本分析装置包括充电光束产生单元，检测单元和分析单元。 带电波束产生单元被配置为产生带电波束并将带电波束施加到样品。 检测单元被配置为检测带电粒子，然后输出信号，所述带电粒子是通过以取决于样本的三维结构和材料特性的方式施加带电束而从样品产生的。 分析单元被配置为处理信号以分析样本。

公开(公告)号：US08698107B2

公开(公告)日：2014-04-15

申请号：US12987950

申请日：2011-01-10

申请人： Ludovic Godet ,  Christopher J. Leavitt ,  Bon-Woong Koo ,  Anthony Renau

发明人： Ludovic Godet ,  Christopher J. Leavitt ,  Bon-Woong Koo ,  Anthony Renau

IPC分类号： H01J37/30

CPC分类号： H01J49/40 ,  H01J37/244 ,  H01J37/3171 ,  H01J37/32935 ,  H01J49/04 ,  H01J2237/24528 ,  H01J2237/24542

摘要： A time-of-flight (TOF) ion sensor system for monitoring an angular distribution of ion species having an ion energy and incident on a substrate includes a drift tube wherein the ion sensor system is configured to vary an angle of the drift tube with respect to a plane of the substrate. The drift tube may have a first end configured to receive a pulse of ions from the ion species wherein heavier ions and lighter ions of the pulse of ions arrive in packets at a second end of the drift tube. An ion detector may be disposed at the second end of the ion sensor, wherein the ion detector is configured to detect the packets of ions derived from the pulse of ions and corresponding to respective different ion masses.

摘要翻译： 用于监测具有离子能并入射在衬底上的离子种类的角分布的飞行时间（TOF）离子传感器系统包括漂移管，其中离子传感器系统被配置为相对于漂移管的角度改变 到基板的平面。 漂移管可以具有构造成从离子物质接收离子脉冲的第一端，其中离子脉冲的较重离子和较轻离子在漂移管的第二端处分组到达。 离子检测器可以设置在离子传感器的第二端处，其中离子检测器被配置为检测源自离子脉冲的离子的分组并且对应于各个不同的离子质量。

公开(公告)号：US08455848B2

公开(公告)日：2013-06-04

申请号：US13648775

申请日：2012-10-10

申请人： Varian Semiconductor Equipment Associates, Inc.

发明人： Thomas A. Pandolfi

IPC分类号： H01J37/317

CPC分类号： H01J37/317 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/24528

摘要： In an ion implanter, a detector assembly is employed to monitor the ion beam current and incidence angle at the location of the work piece or wafer. The detector assembly includes a plurality of pairs of current sensors and a blocker panel. The blocker panel is coupled to the detector array to move together with the detector array. The blocker panel is also disposed a distance away from the sensors to allow certain of the beamlets that comprise the ion beam to reach the sensors. Each sensor in a pair of sensors measures the beam current incident thereon and the incident angle is calculated using these measurements. In this manner, beam current and incidence angle variations may be measured at the work piece site and be accommodated for, thereby avoiding undesirable beam current profiles.

摘要翻译： 在离子注入机中，使用检测器组件来监测工件或晶片位置处的离子束电流和入射角。 检测器组件包括多对电流传感器和阻挡面板。 阻挡面板耦合到检测器阵列以与检测器阵列一起移动。 阻挡板还与传感器远离一定距离，以允许包含离子束的某些子束到达传感器。 一对传感器中的每个传感器测量入射在其上的束流，并且使用这些测量来计算入射角。 以这种方式，可以在工件位置处测量束电流和入射角变化，并且被容纳，从而避免不期望的束电流轮廓。

公开(公告)号：US08288741B1

公开(公告)日：2012-10-16

申请号：US13210959

申请日：2011-08-16

申请人： Timothy J. Miller ,  Ludovic Godet

发明人： Timothy J. Miller ,  Ludovic Godet

IPC分类号： G21K5/10 ,  H01J37/08

CPC分类号： H01J37/302 ,  H01J37/32082 ,  H01J2237/24528

摘要： A method for treating a workpiece. The method includes directing a first ion beam to a first region of a workpiece, wherein the first ion beam has a first ion angular profile of first ions extracted through an aperture of an extraction plate. The method also includes directing a second ion beam to the first region of the workpiece, wherein the second ion beam has a second ion angular profile different than the first ion profile of second ions extracted through the aperture of the extraction plate.

摘要翻译： 一种处理工件的方法。 该方法包括将第一离子束引导到工件的第一区域，其中第一离子束具有通过提取板的孔提取的第一离子的第一离子角分布。 该方法还包括将第二离子束引导到工件的第一区域，其中第二离子束具有与通过提取板的孔提取的第二离子的第一离子分布不同的第二离子角度分布。