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公开(公告)号：US10088438B2
公开(公告)日：2018-10-02
申请号：US15339421
申请日：2016-10-31
Applicant: Hermes Microvision, Inc.
Inventor： Guochong Weng , Youjin Wang , Chiyan Kuan , Chung-Shih Pan
Abstract: A structure for grounding an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for grounding an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and back side. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUV mask is grounded. The reflective surface of the EUV mask on a continuously moving stage is scanned by using the electron beam simultaneously. The moving direction of the stage is perpendicular to the scanning direction of the electron beam.
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公开(公告)号：US09177758B2
公开(公告)日：2015-11-03
申请号：US14564921
申请日：2014-12-09
Applicant: Hermes Microvision Inc.
Inventor： Zhongwei Chen , Jack Jau , Weiming Ren , Chiyan Kuan , Yixiang Wang , Xiaoli Guo , Feng Cao
CPC classification number: H01J37/261 , H01J37/226 , H01J37/244 , H01J37/28 , H01J2237/063 , H01J2237/10 , H01J2237/24475 , H01J2237/24495 , H01J2237/24528 , H01J2237/2801 , H01J2237/2804 , H01J2237/2806 , H01J2237/2814
Abstract: The present invention provides a dual-beam apparatus which employs the dark-field e-beam inspection method to inspect small particles on a surface of a sample such as wafer and mask with high throughput. The dual beam apparatus comprises two single-beam dark-field units placed in a same vacuum chamber and in two different orientations. The two single-beam dark-field units can perform the particle inspection separately or almost simultaneously by means of the alternately-scanning way. The invention also proposes a triple-beam apparatus for both inspecting and reviewing particles on a sample surface within the same vacuum chamber. The triple-beam apparatus comprises one foregoing dual-beam apparatus performing the particle inspection and one high-resolution SEM performing the particle review.
Abstract translation: 本发明提供一种双光束装置，其采用暗场电子束检查方法以高生产量检查诸如晶片和掩模的样品表面上的小颗粒。 双光束装置包括放置在相同真空室中并具有两个不同取向的两个单光束暗场单元。 两个单光束暗场单元可以通过交替扫描方式分别或几乎同时进行粒子检测。 本发明还提出了一种用于检查和检查在相同真空室内的样品表面上的颗粒的三光束装置。 三光束装置包括执行颗粒检查的一个前述双光束装置和执行颗粒检查的一个高分辨率SEM。
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3.发明授权Structure electron beam inspection system for inspecting extreme ultraviolet mask and structure for discharging extreme ultraviolet mask 有权结构电子束检查系统，用于检查极紫外线掩膜和结构，用于放电极紫外线掩膜公开(公告)号：US09113538B2
公开(公告)日：2015-08-18
申请号：US14039939
申请日：2013-09-27
Applicant: HERMES MICROVISION, INC.
Inventor： You-Jin Wang , Chiyan Kuan , Chung-Shih Pan
IPC: A61N5/00 , H05F3/02 , H01J37/02 , H01J37/20 , G01N23/225
CPC classification number: H05F3/02 , G01N23/2251 , H01J37/026 , H01J37/20 , H01J2237/0041 , H01J2237/0044 , H01J2237/2008 , H01J2237/2811
Abstract: A structure for discharging an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for discharging an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and bottom. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUU mask is grounded.
Abstract translation: 提供一种用于放电极紫外线掩模（EUV掩模）的结构，用于通过电子束检查工具在检查期间对EUV掩模进行放电。 用于放电EUV掩模的结构包括至少一个接触引脚以接触EUV掩模上的导电区域，其中EUV掩模可以在侧壁或/或底部上具有另外的导电层。 通过使用电子束检查系统来增强EUV掩模的检查质量，因为EUU掩模上的累积充电是接地的。
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公开(公告)号：US09436985B1
公开(公告)日：2016-09-06
申请号：US14595582
申请日：2015-01-13
Applicant: Hermes Microvision Inc.
Inventor： Chiyan Kuan , Joe Wang , Van-Duc Nguyen
CPC classification number: G06T5/50 , G01N21/9501 , G01N23/2251 , G01N2223/42 , G01N2223/6116 , G03F1/86 , G03F7/7065 , G06K9/40 , G06T5/005 , G06T5/006 , G06T5/40 , G06T2207/20172 , G06T2207/20216 , G06T2207/30148 , H01J37/222 , H01J37/28
Abstract: This invention relates to methods and systems for enhance the signal-to-noise ratio of an image scanned by a charged particle beam. In an embodiment, a sequence of grayscales of a pixel is recorded first, extreme values of the sequence of grayscales are then identified and removed, and the remained grayscales are used to determine a nominated grayscale of the pixel.
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公开(公告)号：US20150325402A1
公开(公告)日：2015-11-12
申请号：US14796565
申请日：2015-07-10
Applicant: Hermes Microvision Inc.
Inventor： Guochong Weng , Youjin Wang , Chiyan Kuan , Chung-Shih Pan
CPC classification number: H01J37/026 , H01J37/20 , H01J2237/0041 , H01J2237/0044 , H01J2237/2008 , H01J2237/2811
Abstract: A structure for grounding an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for grounding an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and back side. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUV mask is grounded. The reflective surface of the EUV mask on a continuously moving stage is scanned by using the electron beam simultaneously. The moving direction of the stage is perpendicular to the scanning direction of the electron beam.
Abstract translation: 提供一种用于接地极紫外线掩模（EUV掩模）的结构，用于通过电子束检查工具在检查期间对EUV掩模进行放电。 用于将EUV掩模接地的结构包括至少一个接地引脚以接触EUV掩模上的导电区域，其中EUV掩模可以在侧壁或/或背侧上具有另外的导电层。 通过使用电子束检查系统来增强EUV掩模的检查质量，因为EUV掩模上的累积充电是接地的。 通过同时使用电子束扫描连续移动台上的EUV掩模的反射表面。 舞台的移动方向垂直于电子束的扫描方向。
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Patent Agency Ranking
公开(公告)号：US20150102220A1
公开(公告)日：2015-04-16
申请号：US14575102
申请日：2014-12-18
Applicant: Hermes Microvision Inc.
Inventor： Guoching Weng , Youjin Wang , Chiyan Kuan , Chung-Shih Pan
CPC classification number: G01N23/2251 , H01J37/026 , H01J37/20 , H01J37/28 , H01J2237/004 , H01J2237/0041 , H01J2237/0044 , H01J2237/2007 , H01J2237/2008 , H01J2237/202 , H01J2237/2448 , H01J2237/2602 , H01J2237/2811 , H01J2237/2813 , H05F3/02
Abstract: A structure for grounding an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for grounding an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and back side. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUV mask is grounded. The reflective surface of the EUV mask on a continuously moving stage is scanned by using the electron beam simultaneously. The moving direction of the stage is perpendicular to the scanning direction of the electron beam.
Abstract translation: 提供一种用于接地极紫外线掩模（EUV掩模）的结构，用于通过电子束检查工具在检查期间对EUV掩模进行放电。 用于将EUV掩模接地的结构包括至少一个接地引脚以接触EUV掩模上的导电区域，其中EUV掩模可以在侧壁或/或背侧上具有另外的导电层。 通过使用电子束检查系统来增强EUV掩模的检查质量，因为EUV掩模上的累积充电是接地的。 通过同时使用电子束扫描连续移动台上的EUV掩模的反射表面。 舞台的移动方向垂直于电子束的扫描方向。
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公开(公告)号：US09002097B1
公开(公告)日：2015-04-07
申请号：US13776939
申请日：2013-02-26
Applicant: Hermes Microvision Inc.
Inventor： Chiyan Kuan , Joe Wang , Van-Duc Nguyen
CPC classification number: G06T5/50 , G01N21/9501 , G01N23/2251 , G01N2223/42 , G01N2223/6116 , G03F1/86 , G03F7/7065 , G06K9/40 , G06T5/005 , G06T5/006 , G06T5/40 , G06T2207/20172 , G06T2207/20216 , G06T2207/30148 , H01J37/222 , H01J37/28
Abstract: This invention relates to methods and systems for enhance the signal-to-noise ratio of an image scanned by a charged particle beam. In an embodiment, a sequence of grayscales of a pixel is recorded first, extreme values of the sequence of grayscales are then identified and removed, and the remained grayscales are used to determine a nominated grayscale of the pixel.
Abstract translation: 本发明涉及用于增强由带电粒子束扫描的图像的信噪比的方法和系统。 在一个实施例中，首先记录像素的灰度序列，然后识别和去除灰度序列的极值，并且使用剩余的灰度级来确定像素的指定灰度级。
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公开(公告)号：US09859089B2
公开(公告)日：2018-01-02
申请号：US14796565
申请日：2015-07-10
Applicant: Hermes Microvision Inc.
Inventor： Guochong Weng , Youjin Wang , Chiyan Kuan , Chung-Shih Pan
CPC classification number: H01J37/026 , H01J37/20 , H01J2237/0041 , H01J2237/0044 , H01J2237/2008 , H01J2237/2811
Abstract: A structure for grounding an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for grounding an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and back side. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUV mask is grounded. The reflective surface of the EUV mask on a continuously moving stage is scanned by using the electron beam simultaneously. The moving direction of the stage is perpendicular to the scanning direction of the electron beam.
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公开(公告)号：US09485846B2
公开(公告)日：2016-11-01
申请号：US14575102
申请日：2014-12-18
Applicant: Hermes Microvision Inc.
Inventor： Guochong Weng , Youjin Wang , Chiyan Kuan , Chung-Shih Pan
IPC: G01N23/00 , H05F3/02 , H01J37/20 , G01N23/225 , H01J37/02
CPC classification number: G01N23/2251 , H01J37/026 , H01J37/20 , H01J37/28 , H01J2237/004 , H01J2237/0041 , H01J2237/0044 , H01J2237/2007 , H01J2237/2008 , H01J2237/202 , H01J2237/2448 , H01J2237/2602 , H01J2237/2811 , H01J2237/2813 , H05F3/02
Abstract: A structure for grounding an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for grounding an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and back side. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUV mask is grounded. The reflective surface of the EUV mask on a continuously moving stage is scanned by using the electron beam simultaneously. The moving direction of the stage is perpendicular to the scanning direction of the electron beam.
Abstract translation: 提供一种用于接地极紫外线掩模（EUV掩模）的结构，用于通过电子束检查工具在检查期间对EUV掩模进行放电。 用于将EUV掩模接地的结构包括至少一个接地引脚以接触EUV掩模上的导电区域，其中EUV掩模可以在侧壁或/或背侧上具有另外的导电层。 通过使用电子束检查系统来增强EUV掩模的检查质量，因为EUV掩模上的累积充电是接地的。 通过同时使用电子束扫描连续移动台上的EUV掩模的反射表面。 舞台的移动方向垂直于电子束的扫描方向。
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公开(公告)号：US09164399B2
公开(公告)日：2015-10-20
申请号：US13737065
申请日：2013-01-09
Applicant: Hermes-Microvision, Inc.
Inventor： Youjin Wang , Chiyan Kuan , Chung-Shih Pan
CPC classification number: G03F7/70741 , G03F1/66 , G03F7/70733
Abstract: A system for operating EUV mask stored in reticle SMIF pod and/or dual pod is provided, wherein the reticle SMIF pod and Dual pod are for storing EUV mask. The system can be a sorter for EUV mask transferred from reticle SMIF pod into dual pod, and vice versa, or an operating system for tools relating to EUV mask, wherein the tools may be EUV lithography, or inspection tool for inspecting EUV mask.
Abstract translation: 提供了一种用于操作存储在掩模版SMIF盒和/或双盒中的EUV掩模的系统，其中标线片SMIF盒和双盒用于存储EUV掩模。 该系统可以是EUV掩模的分拣机，从掩模版SMIF荚转移到双荚，反之亦然，或与EUV掩模相关的工具的操作系统，其中工具可以是EUV光刻，或用于检查EUV掩模的检查工具。
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