MULTI CHARGED PARTICLE BEAM WRITING APPARATUS

    公开(公告)号:US20240242933A1

    公开(公告)日:2024-07-18

    申请号:US18509474

    申请日:2023-11-15

    CPC classification number: H01J37/3177 H01J37/045 H01J37/141 H01J37/145

    Abstract: A multi charged particle beam writing apparatus includes two or more-stage objective lenses each comprised of a magnetic lens, and configured to focus the beam on a substrate, n (n≥3) correction lenses correcting an imaging state of the multi charged particle beam, and an electric field control electrode to which a positive constant voltage with respect to the substrate is applied. The electric field control electrode generates an electric field between the substrate and the electrode. The objective lenses include a first objective lens, and a second objective lens placed most downstream in a travel direction of the beam. m (n≥m≥1) correction lenses of the n correction lenses are magnetic correction lenses placed in a lens magnetic field of the second objective lens. (n−m) correction lenses are placed upstream of the lens magnetic field of the second objective lens in the travel direction.

    MULTI CHARGED PARTICLE BEAM WRITING APPARATUS

    公开(公告)号:US20240242922A1

    公开(公告)日:2024-07-18

    申请号:US18493961

    申请日:2023-10-25

    Abstract: In one embodiment, a multi charged particle beam writing apparatus includes two or more-stage objective lenses each comprised of a magnetic lens, and configured to focus the multi charged particle beam on a substrate, which has passed through the limiting aperture member, three or more correction lenses correcting an imaging state of the multi charged particle beam on the substrate, and an electric field control electrode to which a positive constant voltage with respect to the substrate is applied, the electric field control electrode generating an electric field between the substrate and the electric field control electrode. The two or more-stage objective lenses include a first objective lens, and a second objective lens placed most downstream in a travel direction of the multi charged particle beam. The three or more correction lenses are placed upstream of a lens magnetic field of the second objective lens in the travel direction of the multi charged particle beam.

    MULTI CHARGED PARTICLE BEAM WRITING APPARATUS

    公开(公告)号:US20240242920A1

    公开(公告)日:2024-07-18

    申请号:US18482093

    申请日:2023-10-06

    Inventor: Hirofumi MORITA

    Abstract: In one embodiment, a multi charged particle beam writing apparatus includes an acceleration lens comprised of an electrostatic lens including a plurality of electrodes and configured to accelerate a multi charged particle beam, two or more-stage objective lenses each comprised of a magnetic lens, and configured to focus the multi charged particle beam on a substrate, which has passed through a limiting aperture member, and three or more correction lenses including a first correction lens, a second correction lens and a third correction lens, and configured to correct an imaging state of the multi charged particle beam on the substrate. One or no electrostatic correction lens is placed in a magnetic field of each of the two or more-stage objective lenses. The first correction lens is an electrostatic correction lens that also serves as at least one of the plurality of electrodes of the acceleration lens.

    BLANKING APERTURE ARRAY SYSTEM AND MULTI CHARGED PARTICLE BEAM WRITING APPARATUS

    公开(公告)号:US20240186100A1

    公开(公告)日:2024-06-06

    申请号:US18482972

    申请日:2023-10-09

    Inventor: Shuji YOSHINO

    Abstract: In one embodiment, a blanking aperture array system includes a blanking aperture array substrate provided blankers corresponding to each beam of a multi beam, a first radiation shield, and a second radiation shield. A circuit section applying a voltage to the blankers is disposed closer to a peripheral edge than a cell section including the blankers. The first radiation shield includes a first plate covering over the circuit section, disposed on an upper surface of the blanking aperture array substrate, and extending from a peripheral edge of a first opening for passage of the multi beam. The second radiation shield covers under the circuit section, and includes a lower peripheral wall section that hangs down from a lower surface of the blanking aperture array substrate and surrounds the cell section, and a lower plate extending from a peripheral edge of a lower opening for passage of the multi beam.

    CHARGED PARTICLE BEAM WRITING APPARATUS AND CHARGED PARTICLE BEAM WRITING METHOD

    公开(公告)号:US20240055218A1

    公开(公告)日:2024-02-15

    申请号:US18259674

    申请日:2021-12-09

    CPC classification number: H01J37/147 H01J37/3007 H01J37/045 H01J37/3174

    Abstract: A charged particle beam writing apparatus according to one aspect of the present invention includes an electrode configured to deflect a charged particle beam, an amplifier configured to apply a deflection potential to the electrode, a diagnostic circuit configured to diagnose the amplifier, a switching circuit arranged between an output of the amplifier and the electrode, and configured to switch the output of the amplifier between the electrode and the diagnostic circuit, an electron optical system configured to irradiate a target object with the charged particle beam deflected by being applied with the deflection potential by the amplifier, a column configured to include therein the electrode and the electron optical system, a first coaxial cable configured to connect an output side of the amplifier with the switching circuit, a second coaxial cable configured to connect the electrode with the switching circuit, a third coaxial cable configured to connect the output side of the amplifier with the diagnostic circuit, and a resistance configured to connect, parallelly to the switching circuit, an inner conductor of the first coaxial cable with an inner conductor of the second coaxial cable.

    Electron beam irradiation apparatus and electron beam irradiation method

    公开(公告)号:US11664191B2

    公开(公告)日:2023-05-30

    申请号:US17643727

    申请日:2021-12-10

    CPC classification number: H01J37/3007 H01J37/045 H01J2237/0435

    Abstract: According to one aspect of the present invention, an electron beam irradiation apparatus includes a photoelectric surface configured to receive irradiation of excitation light on a side of a front surface, and generate electron beams from a side of a back surface; a blanking aperture array mechanism provided with passage holes corresponding to the electron beams and configured to perform deflection control on each of the plurality of electron beams passing through the passage holes; and an adjustment mechanism configured to adjust at least one of an orbit of transmitted light that passes through at least one of arrangement objects including the photoelectric surface, the blanking aperture array mechanism, and the limit aperture substrate up to the stage and reaches the stage, among an irradiated excitation light, and an orbit of the electron beams, wherein the arrangement objects shield at least a part of the transmitted light.

    Reduced Coulomb Interactions in a Multi-Beam Column

    公开(公告)号:US20180323034A1

    公开(公告)日:2018-11-08

    申请号:US15587720

    申请日:2017-05-05

    Inventor: Alan D. Brodie

    CPC classification number: H01J37/045 H01J37/10 H01J2237/0435

    Abstract: Performance of a multi-electron-beam system can be improved by reducing Coulomb effects in the illumination path of a multi-beam inspection system. A beam-limiting aperture with multiple holes can be positioned between an electron beam source and a multi-lens array, such as in a field-free region. The beam-limiting aperture is configured to reduce Coulomb interactions between the electron beam source and the multi-lens array. An electron beam system with the beam-limiting aperture can be used in a scanning electron microscope.

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