公开(公告)号：US06689882B2

公开(公告)日：2004-02-10

申请号：US10276011

申请日：2002-11-12

Applicant: Wei Tian

Inventor： Wei Tian

IPC: C07D295155

CPC classification number: C07D295/073 ,  C07D233/61 ,  C07D295/112 ,  C07D295/135 ,  C07D295/155

Abstract: A new improved process for synthesizing morpholinylbenzenes of the formula I by reacting morpholine of formula II with a substituted benzene of formula III, wherein morpholine is used as a reactant and as the only one solvent.

Abstract translation: 通过使式II的吗啉与式III的取代的苯反应合成式I的吗啉基苯的新的改进方法，其中吗啉用作反应物并且作为唯一的一种溶剂。

公开(公告)号：US10548839B2

公开(公告)日：2020-02-04

申请号：US12724601

申请日：2010-03-16

Applicant: Wei Tian

Inventor： Wei Tian

IPC: A61K9/19 ,  A61K9/24 ,  A61K9/00 ,  A61K9/20

Abstract: A multi-phasic, lyophilized, fast-dissolving dosage form (FDDF) for the delivery of a pharmaceutically active ingredient is prepared by sequential dosing of a formulation containing a non-gelling matrix forming agent and a formulation containing a gelling gelatin.

公开(公告)号：US20140071751A1

公开(公告)日：2014-03-13

申请号：US13610433

申请日：2012-09-11

Applicant: YoungPil Kim ,  Dadi Setiadi ,  Wei Tian ,  Antoine Khoueir ,  Rodney Virgil Bowman

Inventor： YoungPil Kim ,  Dadi Setiadi ,  Wei Tian ,  Antoine Khoueir ,  Rodney Virgil Bowman

IPC: G11C16/16

CPC classification number: G11C16/14 ,  G11C11/56 ,  G11C11/5628 ,  G11C11/5635 ,  G11C13/0069 ,  G11C13/0097 ,  G11C16/16 ,  G11C2013/0073 ,  G11C2211/5646

Abstract: Apparatus and method for managing data in a memory, such as but not limited to a flash memory array. In accordance with some embodiments, a soft erasure is performed on a block of memory cells by toggling an erasure status value without otherwise affecting a written state of the cells in the block. The memory cells are subsequently overwritten with a set of data using a write polarity direction determined responsive to the toggled erasure status value.

Abstract translation: 用于管理存储器中的数据的装置和方法，诸如但不限于闪存阵列。 根据一些实施例，通过切换擦除状态值来对存储器单元块执行软擦除，而不影响块中的单元的写入状态。 随后使用响应于切换的擦除状态值确定的写入极性方向用一组数据覆盖存储器单元。

公开(公告)号：US08648426B2

公开(公告)日：2014-02-11

申请号：US12971393

申请日：2010-12-17

Applicant: Insik Jin ,  Wei Tian ,  Venugopalan Vaithyanathan ,  Cedric Bedoya ,  Markus Siegert

Inventor： Insik Jin ,  Wei Tian ,  Venugopalan Vaithyanathan ,  Cedric Bedoya ,  Markus Siegert

IPC: H01L21/70

CPC classification number: H01L27/115 ,  B82Y10/00 ,  H01L29/66977

Abstract: A transistor including a source; a drain; a gate region, the gate region including a gate; an island; and a gate oxide, wherein the gate oxide is positioned between the gate and the island; and the gate and island are coactively coupled to each other; and a source barrier and a drain barrier, wherein the source barrier separates the source from the gate region and the drain barrier separates the drain from the gate region.

Abstract translation: 一种包括源极的晶体管; 排水 栅极区域，所述栅极区域包括栅极; 一个岛屿; 和栅极氧化物，其中所述栅极氧化物位于所述栅极和岛之间; 门和岛彼此共同耦合; 源极屏障和漏极阻挡层，其中源极栅极将源极与栅极区域隔离，并且漏极栅极将漏极与栅极区域分离。

公开(公告)号：US08487291B2

公开(公告)日：2013-07-16

申请号：US12362640

申请日：2009-01-30

Applicant: Nurul Amin ,  Insik Jin ,  Wei Tian ,  Andrew James Wirebaugh ,  Venugopalan Vaithyanathan ,  Ming Sun

Inventor： Nurul Amin ,  Insik Jin ,  Wei Tian ,  Andrew James Wirebaugh ,  Venugopalan Vaithyanathan ,  Ming Sun

IPC: H01L47/00 ,  G11C11/00

CPC classification number: H01L45/16 ,  H01L45/085 ,  H01L45/1266 ,  H01L45/14

Abstract: Programmable metallization memory cells having an active electrode, an opposing inert electrode and a variable resistive element separating the active electrode from the inert electrode. The variable resistive element includes a plurality of alternating solid electrolyte layers and electrically conductive layers. The electrically conductive layers electrically couple the active electrode to the inert electrode in a programmable metallization memory cell. Methods to form the same are also disclosed.

Abstract translation: 可编程金属化存储单元具有有源电极，相对的惰性电极和将活性电极与惰性电极分开的可变电阻元件。 可变电阻元件包括多个交替的固体电解质层和导电层。 导电层在可编程金属化存储单元中将有源电极电耦合到惰性电极。 也公开了形成它们的方法。

公开(公告)号：US08446752B2

公开(公告)日：2013-05-21

申请号：US12497767

申请日：2009-07-06

Applicant: Ming Sun ,  Nurul Amin ,  Insik Jin ,  Young Pil Kim ,  Chulmin Jung ,  Venugopalan Vaithyanathan ,  Wei Tian ,  Hai Li

Inventor： Ming Sun ,  Nurul Amin ,  Insik Jin ,  Young Pil Kim ,  Chulmin Jung ,  Venugopalan Vaithyanathan ,  Wei Tian ,  Hai Li

IPC: G11C11/00

CPC classification number: H01L45/1233 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C13/0011 ,  G11C13/003 ,  G11C2213/74 ,  G11C2213/76 ,  H01L27/2463 ,  H01L45/085 ,  H01L45/1266 ,  H01L45/14 ,  H01L45/143 ,  H01L45/144 ,  H01L45/145 ,  H01L45/146 ,  H01L45/1616 ,  H01L45/1625 ,  H01L45/1675

Abstract: An electronic device that includes a first programmable metallization cell (PMC) that includes an active electrode; an inert electrode; and a solid electrolyte layer disposed between the active electrode and the inert electrode; and a second PMC that includes an active electrode; an inert electrode; and a solid electrolyte layer disposed between the active electrode and the inert electrode, wherein the first and second PMCs are electrically connected in anti-parallel.

Abstract translation: 一种电子设备，包括：包括有源电极的第一可编程金属化单元（PMC）; 惰性电极; 以及设置在所述有源电极和所述惰性电极之间的固体电解质层; 和包括有源电极的第二PMC; 惰性电极; 以及设置在所述有源电极和所述惰性电极之间的固体电解质层，其中所述第一和第二PMC以反平行电连接。

公开(公告)号：US08426222B2

公开(公告)日：2013-04-23

申请号：US13248360

申请日：2011-09-29

Applicant: Xiaohua Lou ,  Yuankai Zheng ,  Wenzhong Zhu ,  Wei Tian ,  Zheng Gao

Inventor： Xiaohua Lou ,  Yuankai Zheng ,  Wenzhong Zhu ,  Wei Tian ,  Zheng Gao

IPC: H01L29/82 ,  G11C11/02

CPC classification number: H01L43/08 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/16 ,  G11C11/1659 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3268 ,  H01F41/303 ,  H01L43/12

Abstract: A magnetic stack having a ferromagnetic free layer, a metal oxide layer that is antiferromagnetic at a first temperature and non-magnetic at a second temperature higher than the first temperature, a ferromagnetic pinned reference layer, and a non-magnetic spacer layer between the free layer and the reference layer. During a writing process, the metal oxide layer is non-magnetic. For magnetic memory cells, such as magnetic tunnel junction cells, the metal oxide layer provides reduced switching currents.

Abstract translation: 具有铁磁自由层的磁性堆叠，在第一温度下为反铁磁性且在比第一温度高的第二温度下为非磁性的金属氧化物层，铁磁性固定基准层和非磁性间隔层之间， 层和参考层。 在写入过程中，金属氧化物层是非磁性的。 对于诸如磁性隧道结电池的磁存储器单元，金属氧化物层提供降低的开关电流。

公开(公告)号：US20120241886A1

公开(公告)日：2012-09-27

申请号：US13491763

申请日：2012-06-08

Applicant: Xiaohua Lou ,  Yuankai Zheng ,  Wenzhong Zhu ,  Wei Tian ,  Zheng Gao

Inventor： Xiaohua Lou ,  Yuankai Zheng ,  Wenzhong Zhu ,  Wei Tian ,  Zheng Gao

IPC: H01L29/82

CPC classification number: H01L43/08 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/16 ,  G11C11/1659 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3268 ,  H01F41/303 ,  H01L43/12

Abstract: A magnetic stack having a ferromagnetic free layer, a metal oxide layer that is antiferromagnetic at a first temperature and non-magnetic at a second temperature higher than the first temperature, a ferromagnetic pinned reference layer, and a non-magnetic spacer layer between the free layer and the reference layer. During a writing process, the metal oxide layer is non-magnetic. For magnetic memory cells, such as magnetic tunnel junction cells, the metal oxide layer provides reduced switching currents.

Abstract translation: 具有铁磁自由层的磁性堆叠，在第一温度下为反铁磁性且在比第一温度高的第二温度下为非磁性的金属氧化物层，铁磁性固定基准层和非磁性间隔层之间， 层和参考层。 在写入过程中，金属氧化物层是非磁性的。 对于诸如磁性隧道结电池的磁存储器单元，金属氧化物层提供降低的开关电流。

公开(公告)号：US08217478B2

公开(公告)日：2012-07-10

申请号：US12425466

申请日：2009-04-17

Applicant: Xiaohua Lou ,  Yuankai Zheng ,  Wenzhong Zhu ,  Wei Tian ,  Zheng Gao

Inventor： Xiaohua Lou ,  Yuankai Zheng ,  Wenzhong Zhu ,  Wei Tian ,  Zheng Gao

IPC: H01L29/82 ,  G11C11/02

CPC classification number: H01L43/08 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/16 ,  G11C11/1659 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3268 ,  H01F41/303 ,  H01L43/12

Abstract: A magnetic stack having a ferromagnetic free layer, a metal oxide layer that is antiferromagnetic at a first temperature and non-magnetic at a second temperature higher than the first temperature, a ferromagnetic pinned reference layer, and a non-magnetic spacer layer between the free layer and the reference layer. During a writing process, the metal oxide layer is non-magnetic. For magnetic memory cells, such as magnetic tunnel junction cells, the metal oxide layer provides reduced switching currents.

Abstract translation: 具有铁磁自由层的磁性堆叠，在第一温度下为反铁磁性且在比第一温度高的第二温度下为非磁性的金属氧化物层，铁磁性固定基准层和非磁性间隔层之间， 层和参考层。 在写入过程中，金属氧化物层是非磁性的。 对于诸如磁性隧道结电池的磁存储器单元，金属氧化物层提供降低的开关电流。

公开(公告)号：US20120138884A1

公开(公告)日：2012-06-07

申请号：US13396731

申请日：2012-02-15

Applicant: Wei Tian ,  Dexin Wang ,  Venugopalan Vaithyanathan ,  Yang Dong ,  Muralikrishnan Balakrishnan ,  Ivan Petrov Ivanov ,  Ming Sun ,  Dimitar V. Dimitrov

Inventor： Wei Tian ,  Dexin Wang ,  Venugopalan Vaithyanathan ,  Yang Dong ,  Muralikrishnan Balakrishnan ,  Ivan Petrov Ivanov ,  Ming Sun ,  Dimitar V. Dimitrov

IPC: H01L45/00

CPC classification number: B82Y10/00 ,  G11C13/0011 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/16

Abstract: Programmable metallization memory cells having a planarized silver electrode and methods of forming the same are disclosed. The programmable metallization memory cells include a first metal contact and a second metal contact, an ion conductor solid electrolyte material is between the first metal contact and the second metal contact, and either a silver alloy doping electrode separates the ion conductor solid electrolyte material from the first metal contact or the second metal contact, or a silver doping electrode separates the ion conductor solid electrolyte material from the first metal contact. The silver electrode includes a silver layer and a metal seed layer separating the silver layer from the first metal contact.