公开(公告)号：US12078551B2

公开(公告)日：2024-09-03

申请号：US17069596

申请日：2020-10-13

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Zi-Ang Su ,  Ming-Shuan Li ,  Shu-Hua Wu ,  Chih Chieh Yeh ,  Chih-Hung Wang ,  Wen-Hsing Hsieh

IPC: G01K7/01 ,  H01L21/02 ,  H01L21/265 ,  H01L21/8228 ,  H01L27/082 ,  H01L29/06 ,  H01L29/165 ,  H01L29/66 ,  H01L29/737

CPC classification number: G01K7/015 ,  H01L21/02532 ,  H01L21/02603 ,  H01L21/26513 ,  H01L21/82285 ,  H01L27/0826 ,  H01L29/0673 ,  H01L29/165 ,  H01L29/66242 ,  H01L29/7371

Abstract: The present disclosure provides embodiments of semiconductor devices. In one embodiment, the semiconductor device includes a dielectric layer and a fin-shaped structure disposed over the dielectric layer. The fin-shaped structure includes a first p-type doped region, a second p-type doped region, and a third p-type doped region, and a first n-type doped region, a second n-type doped region, and a third n-type doped region interleaving the first p-type doped region, the second p-type doped region, and the third p-type doped region. The first p-type doped region, the third p-type doped region and the third n-type doped region are electrically coupled to a first potential. The second p-type doped region, the first n-type doped region and the second n-type doped region are electrically coupled to a second potential different from the first potential.

公开(公告)号：US11971306B2

公开(公告)日：2024-04-30

申请号：US17781735

申请日：2020-12-25

Applicant: Mitsubishi Electric Corporation

Inventor： Daisuke Fujisawa ,  Masashi Ueno

IPC: G01J5/24 ,  G01K7/01 ,  G01J5/00 ,  G01J5/20

CPC classification number: G01J5/24 ,  G01K7/015 ,  G01J2005/0077 ,  G01J2005/202

Abstract: A diode (11) is provided on a substrate (1) and thermally insulated from the substrate (1). A positive feedback circuit (18) provides a positive feedback loop so that when a current of the diode (11) decreases due to a change in temperature of the diode (11), the positive feedback circuit (18) further decreases the current of the diode (11), and when the current of the diode (11) increases, the positive feedback circuit (18) further increases the current of the diode (11).

公开(公告)号：US11747212B2

公开(公告)日：2023-09-05

申请号：US15902503

申请日：2018-02-22

Applicant: KING FAHD UNIVERSITY OF PETROLEUM AND MINERALS

Inventor： Munir A. Al-Absi

IPC: G01K7/01 ,  H01L27/088

CPC classification number: G01K7/01 ,  G01K7/015 ,  H01L27/088

Abstract: The present disclosure relates to a compact temperature sensor displaying a temperature-resistance relationship. The temperature sensor comprises cross-coupled CMOS technology exhibits negative resistance, resulting in resistance-sensitive temperature sensing and amplification. The temperature sensor can be tuned to operate across a wide range of temperatures via modulation of a biasing current. The present disclosure further relates to subthreshold operation of CMOS technology.

公开(公告)号：US20230163000A1

公开(公告)日：2023-05-25

申请号：US17916894

申请日：2021-04-15

Applicant: Sony Semiconductor Solutions Corporation

Inventor： Kaihei Hotta ,  Kyoichi Takenaka ,  Naoki Kawazu

IPC: H01L21/67 ,  G01K7/01 ,  G01K7/16

CPC classification number: H01L21/67248 ,  G01K7/015 ,  G01K7/16

Abstract: An object of the present invention is to provide a semiconductor apparatus capable of recognizing the actual temperature for each semiconductor chip even while driving the device.
A semiconductor apparatus of the present disclosure includes a semiconductor chip, a plurality of pad electrodes formed in the semiconductor chip, and an impedance element electrically connected between at least two pad electrodes of the plurality of pad electrodes. Then, the semiconductor apparatus is configured to be capable of measuring a temperature of the semiconductor chip by applying a certain electrical signal between the at least two pad electrodes connected with the impedance element from outside of the semiconductor chip.

公开(公告)号：US20190210029A1

公开(公告)日：2019-07-11

申请号：US16233261

申请日：2018-12-27

Applicant: BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD. ,  BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Zongze HE ,  Shuo LI ,  Jianguang YANG ,  Zhenghua LU ,  Yuxuan CHEN ,  Liang ZHANG ,  Feng LONG

IPC: B01L7/00 ,  G01K7/01

CPC classification number: B01L7/52 ,  B01L2300/1827 ,  G01K7/015

Abstract: The present disclosure provides a temperature-controlled heating panel including: a substrate; at least one heating element provided in a first region on the substrate; at least one temperature sensing element provided in a second region on the substrate and located in a heat radiation area of the at least one heating element; a controller configured to control the temperature of the heat radiation area by using the at least one heating element based on the temperature of the heat radiation area sensed by the at least one temperature sensing element.

公开(公告)号：US20180293937A1

公开(公告)日：2018-10-11

申请号：US15569129

申请日：2017-05-10

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  CHENGDU BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Zhenxiao TONG

IPC: G09G3/3225 ,  G09G3/36 ,  G01K7/01

CPC classification number: G09G3/3225 ,  G01K7/015 ,  G09G3/20 ,  G09G3/3208 ,  G09G3/36 ,  G09G2320/041 ,  G09G2320/0673 ,  G09G2330/021

Abstract: A device and method for temperature detection, a device and method for compensating for temperature of display panel, and a display device are disclosed. The device for temperature detection includes: a first inverter, inverting a voltage signal at an input terminal thereof to output an inverted signal; a delay assembly, delaying the inverted signal and outputting a delayed inverted signal as an output signal; a switching transistor, applying a first voltage signal to the input terminal of the first inverter from a first voltage signal terminal based on the output signal; a first capacitor, including a first terminal coupled to a first electrode of the switching transistor and a second terminal coupled to the input terminal of the first inverter; and a temperature sensing transistor, configured so that a channel current of the temperature sensing transistor is proportional to a temperature at the sub-threshold bias voltage.

公开(公告)号：US09810584B2

公开(公告)日：2017-11-07

申请号：US14763613

申请日：2014-02-10

Applicant: Optis Circuit Technology, LLC

Inventor： Jukka Kohola ,  Marko Pessa

IPC: G01K7/00 ,  G01K7/01 ,  G05F3/30

CPC classification number: G01K7/01 ,  G01K7/015 ,  G05F3/30

Abstract: A temperature sensor includes two branches, each branch having at least a first transistor and a second transistor connected as diodes and cascaded, so that an emitter of the first transistor is connected to a collector of the second transistor of the same branch. The temperature source also includes a current source configured to provide a current to the two branches, and an analog-to-digital convertor. The analog-to-digital convertor is connected to capture a voltage between emitters of the first transistors or of the second transistors, and is configured to convert said voltage to a digital temperature signal.

公开(公告)号：US09804036B2

公开(公告)日：2017-10-31

申请号：US14308983

申请日：2014-06-19

Applicant: Infineon Technologies AG

Inventor： Fan Yung Ma

IPC: G01K7/01 ,  G01K7/14 ,  G01K15/00

CPC classification number: G01K15/005 ,  G01K7/015

Abstract: Representative implementations of devices and techniques provide calibration for a chip-based temperature sensor. Two or more measurements are taken using a high resolution temperature sensor digitizer, and used to determine a calibration for the temperature sensor, based on a reference temperature value calculated from the measurements.

公开(公告)号：US20170271457A1

公开(公告)日：2017-09-21

申请号：US15435833

申请日：2017-02-17

Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA ,  DENSO CORPORATION

Inventor： Atsushi ONOGI ,  Toru ONISHI ,  Shuhei MITANI ,  Yusuke YAMASHITA ,  Katsuhiro KUTSUKI

IPC: H01L29/16 ,  H01L27/06 ,  H01L29/10 ,  H01L29/08 ,  H01L29/423 ,  H01L29/739

CPC classification number: H01L29/1608 ,  G01K7/01 ,  G01K7/015 ,  G01K7/028 ,  H01L23/34 ,  H01L27/0255 ,  H01L27/0716 ,  H01L27/2454 ,  H01L29/083 ,  H01L29/1095 ,  H01L29/6606 ,  H01L29/7397 ,  H01L29/7804 ,  H01L29/7813 ,  H01L29/8611 ,  H01L2924/12036

Abstract: A semiconductor device includes a semiconductor substrate of silicon carbide, and a temperature sensor portion. The semiconductor substrate includes a portion in which an n-type drift region and a p-type body region are laminated. The temperature sensor portion is disposed in the semiconductor substrate and is separated from the drift region by the body region. The temperature sensor portion includes an n-type cathode region being in contact with the body region, and a p-type anode region separated from the body region by the cathode region.

公开(公告)号：US20170227409A1

公开(公告)日：2017-08-10

申请号：US15041022

申请日：2016-02-10

Applicant: FREESCALE SEMICONDUCTOR, INC.

Inventor： SANJAY K. WADHWA

IPC: G01K13/00 ,  G01K7/00 ,  G05F3/26

CPC classification number: G01K7/015 ,  G01K13/00 ,  G01K2219/00 ,  G05F3/267

Abstract: An on-die temperature sensor measures temperature during a temperature-measurement session. A PTAT (proportional-to-absolute-temperature) generator generates an analog PTAT voltage that is dependent on temperature. A ramp generator generates a changing, analog ramp voltage whose rate of change is dependent on the PTAT voltage, such that the rate of change of the ramp voltage is dependent on the temperature. A comparator compares the ramp voltage to a reference voltage to detect termination of the temperature-measurement session. A counter generates a count value based on the duration of the temperature-measurement session, where the count value is mapped to the measured temperature using a lookup table. The PTAT generator has (i) two npn-type bipolar devices that generate a base-to-emitter voltage difference that is dependent on temperature and function as an amplifier input stage and (ii) circuitry to generate base currents for the bipolar devices to avoid current loading at the PTAT output.