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公开(公告)号:US12117345B2
公开(公告)日:2024-10-15
申请号:US18411073
申请日:2024-01-12
Applicant: The Procter & Gamble Company
Inventor: Stephen Michael Varga , Steven Henry Mersch
IPC: G01J5/03 , G01J5/24 , H01L27/146 , H01L31/0296 , H04N5/33
CPC classification number: G01J5/03 , G01J5/24 , H01L27/14649 , H01L31/02966 , H04N5/33
Abstract: Systems and methods for thermal radiation detection utilizing a thermal radiation detection system are provided. The thermal radiation detection system includes one or more mercury-cadmium-telluride (HgCdTe)-based photodiode infrared detectors or Indium Arsenide (InAs)-based photodiode infrared detectors and a temperature sensing circuit. The temperature sensing circuit is configured to generate signals correlated to the temperatures of one or more of the plurality of infrared sensor elements. The thermal radiation detection system also includes a signal processing circuit.
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公开(公告)号:US11971306B2
公开(公告)日:2024-04-30
申请号:US17781735
申请日:2020-12-25
Applicant: Mitsubishi Electric Corporation
Inventor: Daisuke Fujisawa , Masashi Ueno
CPC classification number: G01J5/24 , G01K7/015 , G01J2005/0077 , G01J2005/202
Abstract: A diode (11) is provided on a substrate (1) and thermally insulated from the substrate (1). A positive feedback circuit (18) provides a positive feedback loop so that when a current of the diode (11) decreases due to a change in temperature of the diode (11), the positive feedback circuit (18) further decreases the current of the diode (11), and when the current of the diode (11) increases, the positive feedback circuit (18) further increases the current of the diode (11).
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公开(公告)号:US11967665B2
公开(公告)日:2024-04-23
申请号:US17312616
申请日:2019-12-11
Inventor: Abdelkader Aliane , Jean-Louis Ouvrier-Buffet
IPC: H01L31/113 , G01J5/02 , G01J5/08 , G01J5/24
CPC classification number: H01L31/1136 , G01J5/024 , G01J5/0853 , G01J5/24
Abstract: A method for forming a detection structure for detecting electromagnetic radiation includes an MOS transistor as a transducer. The method is based on the use of lateral extension elements as a doping mask for the semiconductor layer of the transistor and an etching mask for the same semiconductor layer, in order to provide contact portions of a drain and a source of the transistor.
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公开(公告)号:US11754448B2
公开(公告)日:2023-09-12
申请号:US17654472
申请日:2022-03-11
Inventor: Laurent Dussopt
CPC classification number: G01J5/24 , G01J5/0837 , G01J2005/202
Abstract: The invention relates to a thermal detector (1) for detecting electromagnetic radiation, comprising:
a readout substrate (10);
a membrane (20) suspended above the readout substrate, comprising: a thermometric transducer (23), and a resistive load (25) that is formed from a track that extends longitudinally to form a closed continuous loop;
a collecting antenna (16), which is located away from the suspended membrane (20) and coupled to the resistive load (25), and which comprises a coupling track (16.1), which track is located plumb with the resistive load (25) and extends longitudinally to form an open continuous loop, thus permitting inductive coupling between the coupling track (16.1) and the resistive load (25).-
公开(公告)号:US11592336B2
公开(公告)日:2023-02-28
申请号:US17206177
申请日:2021-03-19
Applicant: The Procter & Gamble Company
Inventor: Stephen Michael Varga , Steven Henry Mersch
IPC: G01J5/03 , H01L27/146 , G01J5/24 , H01L31/0296 , H04N5/33
Abstract: Systems and methods for thermal radiation detection utilizing a thermal radiation detection system are provided. The thermal radiation detection system includes one or more mercury-cadmium-telluride (HgCdTe)-based photodiode infrared detectors or Indium Antimonide (InSb)-based photodiode infrared detectors and a temperature sensing circuit. The temperature sensing circuit is configured to generate signals correlated to the temperatures of one or more of the plurality of infrared sensor elements. The thermal radiation detection system also includes a signal processing circuit.
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公开(公告)号:US11555744B2
公开(公告)日:2023-01-17
申请号:US17048046
申请日:2019-04-17
Applicant: Obsidian Sensors, Inc.
Inventor: Edward Chan , Bing Wen , John Hong , Tallis Chang , Seung-Tak Ryu
Abstract: Methods of sensor readout and calibration and circuits for performing the methods are disclosed. In some embodiments, the methods include driving an active sensor at a voltage. In some embodiments, the methods include use of a calibration sensor, and the circuits include the calibration sensor. In some embodiments, the methods include use of a calibration current source and circuits include the calibration current source. In some embodiments, a sensor circuit includes a Sigma-Delta ADC. In some embodiments, a column of sensors is readout using first and second readout circuits during a same row time.
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公开(公告)号:US20220291048A1
公开(公告)日:2022-09-15
申请号:US17654472
申请日:2022-03-11
Inventor: Laurent DUSSOPT
Abstract: The invention relates to a thermal detector (1) for detecting electromagnetic radiation, comprising: a readout substrate (10); a membrane (20) suspended above the readout substrate, comprising: a thermometric transducer (23), and a resistive load (25) that is formed from a track that extends longitudinally to form a closed continuous loop; a collecting antenna (16), which is located away from the suspended membrane (20) and coupled to the resistive load (25), and which comprises a coupling track (16.1), which track is located plumb with the resistive load (25) and extends longitudinally to form an open continuous loop, thus permitting inductive coupling between the coupling track (16.1) and the resistive load (25).
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公开(公告)号:US11035786B2
公开(公告)日:2021-06-15
申请号:US16905871
申请日:2020-06-18
Applicant: FLIR Systems AB
Inventor: Hakan E. Nygren , Eric A. Kurth , Jonas Sandsten
IPC: G01N21/3504 , G01J5/24 , G01J5/26
Abstract: Improved techniques for infrared imaging and gas detection are provided. In one example, a system includes a sensor array configured to receive infrared radiation from a scene comprising a background portion and a gas. The sensor array includes a first set of infrared sensors configured with a first spectral response corresponding to a first wavelength range of the infrared radiation associated with the background portion. The sensor array also includes a second set of infrared sensors configured with a second spectral response corresponding to a second wavelength range of the infrared radiation associated with the gas. The system also includes a read out integrated circuit (ROIC) configured to provide pixel values for first and second images captured by the first and second sets of infrared sensors, respectively, in response to the received infrared radiation. Additional systems and methods are also provided.
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公开(公告)号:US11015979B2
公开(公告)日:2021-05-25
申请号:US16542673
申请日:2019-08-16
Applicant: FLIR Systems, Inc.
Inventor: Naseem Y. Aziz , Brian B. Simolon
Abstract: A bolometer circuit may include an active bolometer configured to receive external infrared (IR) radiation. The bolometer circuit may be configured to reduce power consumption at high temperatures. In particular, the bolometer circuit may include additional resistors provided in the resistive loads for bolometer conduction paths to limit power at high temperatures. In some embodiments, the bias (e.g., a voltage level) to the gates of transistors in the resistive loads for the bolometer conduction paths may be adjusted based on temperature to limit power and/or current at high temperatures. In bolometer circuits with a feedback resistor provided across an amplifier to configure a feedback amplifier, a circuit with adjustable amplifier power may be provided to save power. In some embodiments, a bolometer circuits may be provided with reduced gains to allow for very hot scenes to be imaged without railing the output.
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公开(公告)号:US20210072087A1
公开(公告)日:2021-03-11
申请号:US16962642
申请日:2019-02-27
Applicant: LYNRED
Inventor: Roger Petigny , Patrick Robert
Abstract: A device of integration of an electric current received on an integration node, includes an operational amplifier, an integration capacitor, and a circuit for modifying an output voltage of the operational amplifier formed by a charge transfer circuit configured to be connected on the integration node and to transfer charges into the integration capacitor. The device also includes a comparison circuit configured to trigger the modification circuit at least once during the integration duration, and a storage circuit configured to store the number of triggerings which have occurred during the integration duration. The received electric current is calculated according to the output voltage as well as to the number of triggerings multiplied by the modification of the output voltage induced by the modification circuit.
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