Invention Grant
- Patent Title: Temperature sensor with layered architecture
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Application No.: US14763613Application Date: 2014-02-10
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Publication No.: US09810584B2Publication Date: 2017-11-07
- Inventor: Jukka Kohola , Marko Pessa
- Applicant: Optis Circuit Technology, LLC
- Applicant Address: US TX Plano
- Assignee: OPTIS CIRCUIT TECHNOLOGY, LLC
- Current Assignee: OPTIS CIRCUIT TECHNOLOGY, LLC
- Current Assignee Address: US TX Plano
- Agency: The Danamraj Law Group, P.C.
- Agent Thomas L. Crisman; Kenneth A. McClure
- Priority: EP13156870 20130227
- International Application: PCT/EP2014/052560 WO 20140210
- International Announcement: WO2014/131607 WO 20140904
- Main IPC: G01K7/00
- IPC: G01K7/00 ; G01K7/01 ; G05F3/30

Abstract:
A temperature sensor includes two branches, each branch having at least a first transistor and a second transistor connected as diodes and cascaded, so that an emitter of the first transistor is connected to a collector of the second transistor of the same branch. The temperature source also includes a current source configured to provide a current to the two branches, and an analog-to-digital convertor. The analog-to-digital convertor is connected to capture a voltage between emitters of the first transistors or of the second transistors, and is configured to convert said voltage to a digital temperature signal.
Public/Granted literature
- US20150362380A1 Temperature Sensor with Layered Architecture Public/Granted day:2015-12-17
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