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    Bottom electrode structure in memory device
    1.
    发明授权
    Bottom electrode structure in memory device 有权

    公开(公告)号：US11631810B2

    公开(公告)日：2023-04-18

    申请号：US17233755

    申请日：2021-04-19

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Chao-Yang Chen ,  Chun-Yang Tsai ,  Kuo-Ching Huang ,  Wen-Ting Chu ,  Pili Huang ,  Cheng-Jun Wu

    IPC: H01L27/088 ,  H01L21/8236 ,  H01L45/00 ,  H01L27/24

    Abstract: In some embodiments, the present disclosure relates to an integrated chip. The integrated chip includes one or more lower interconnects arranged within a dielectric structure over a substrate. A bottom electrode is disposed over one of the one or more lower interconnects. The bottom electrode includes a first material having a first electronegativity. A data storage layer separates the bottom electrode from a top electrode. The bottom electrode is between the data storage layer and the substrate. A reactivity reducing layer includes a second material and has a second electronegativity that is greater than or equal to the first electronegativity. The second material contacts a lower surface of the bottom electrode that faces the substrate.

    MULTI-STEP RESET TECHNIQUE TO ENLARGE MEMORY WINDOW
    2.
    发明申请
    MULTI-STEP RESET TECHNIQUE TO ENLARGE MEMORY WINDOW 有权

    公开(公告)号：US20210043257A1

    公开(公告)日：2021-02-11

    申请号：US17082232

    申请日：2020-10-28

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Chao-Yang Chen ,  Cheng-Jun Wu ,  Chun-Yang Tsai ,  Kuo-Ching Huang

    IPC: G11C13/00

    Abstract: In some embodiments, the present disclosure relates to a method, comprising the performing of a reset operation to a resistive random access memory (RRAM) cell. A first voltage bias having a first polarity is applied to the RRAM cell. An absolute value of the first voltage bias is greater than an absolute value of a first reset voltage. The application of the first voltage bias induces the RRAM cell to change from a low resistance to an intermediate resistance greater than the low resistance. A second voltage bias having a second polarity oppose to the first polarity is then applied to the RRAM cell. An absolute value of the second reset voltage is less than an absolute value of the second voltage bias and less than the absolute value of the first reset voltage. The application of the second voltage bias induces the RRAM cell to have a high resistance.

    Memory circuit and formation method thereof
    3.
    发明授权
    Memory circuit and formation method thereof 有权

    公开(公告)号：US10461126B2

    公开(公告)日：2019-10-29

    申请号：US15678557

    申请日：2017-08-16

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Chun-Yang Tsai ,  Kuo-Ching Huang ,  Tong-Chern Ong

    IPC: H01L29/788 ,  H01L21/336 ,  H01L27/24 ,  G11C13/00 ,  H01L45/00 ,  G11C11/16

    Abstract: The present disclosure relates to a memory circuit having a shared control device for access to target and complementary memory devices for improved differential sensing. The memory circuit has a control device arranged within a substrate and having a first terminal coupled to a source-line, a second terminal coupled to a word-line, and a third terminal. A first memory device has a first lower electrode separated from a first upper electrode by a first data storage layer. The first upper electrode is coupled to the third terminal and the first lower electrode is coupled to a first bit-line. A second memory device has a second lower electrode separated from a second upper electrode by a second data storage layer. The second upper electrode is coupled to the second bit-line and the second lower electrode is coupled to the third terminal.

    Vertical BJT for high density memory
    5.
    发明授权
    Vertical BJT for high density memory 有权
    垂直BJT用于高密度存储器

    公开(公告)号：US09543404B2

    公开(公告)日：2017-01-10

    申请号：US14826318

    申请日：2015-08-14

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Yu-Wei Ting ,  Chun-Yang Tsai ,  Kuo-Ching Huang

    IPC: H01L27/00 ,  H01L29/66 ,  H01L27/24 ,  G11C11/40 ,  H01L29/732 ,  H01L29/82 ,  H01L45/00 ,  G11C13/00 ,  H01L27/22

    CPC classification number: H01L29/732 ,  G11C11/161 ,  G11C11/40 ,  G11C13/0002 ,  G11C13/003 ,  G11C13/0069 ,  G11C2213/79 ,  H01L27/226 ,  H01L27/228 ,  H01L27/2436 ,  H01L27/2445 ,  H01L27/2454 ,  H01L29/66272 ,  H01L29/66333 ,  H01L29/82 ,  H01L45/04

    Abstract: Some aspects of this disclosure relate to a memory device. The memory device includes a collector region having a first conductivity type and which is coupled to a source line of the memory device. A base region is formed over the collector region and has a second conductivity type. A gate structure is coupled to the base region and acts as a shared word line for first and second neighboring memory cells of the memory device. First and second emitter regions are formed over the base region and have the first conductivity type. The first and second emitter regions are arranged on opposite sides of the gate structure. First and second contacts extend upwardly from the first and second emitter regions, respectively, and couple the first and second emitter regions to first and second data storage elements, respectively, of the first and second neighboring memory cells, respectively.

    Abstract translation: 本公开的一些方面涉及存储器设备。 存储器件包括具有第一导电类型并且耦合到存储器件的源极线的集电极区域。 基极区域形成在集电极区域上并且具有第二导电类型。 栅极结构耦合到基极区域并用作存储器件的第一和第二相邻存储器单元的共享字线。 第一和第二发射极区域形成在基极区域上并且具有第一导电类型。 第一和第二发射极区域布置在栅极结构的相对侧上。 第一和第二触点分别从第一和第二发射极区域向上延伸，并分别将第一和第二发射极区域耦合到第一和第二相邻存储器单元的第一和第二数据存储元件。

    Innovative approach of 4F2 driver formation for high-density RRAM and MRAM
    6.
    发明授权
    Innovative approach of 4F2 driver formation for high-density RRAM and MRAM 有权
    用于高密度RRAM和MRAM的4F2驱动器形成的创新方法

    公开(公告)号：US09520446B2

    公开(公告)日：2016-12-13

    申请号：US14450809

    申请日：2014-08-04

    Applicant: Taiwan Semiconductor Manufacturing Co. Ltd.

    Inventor： Yu-Wei Ting ,  Chi-Wen Liu ,  Chun-Yang Tsai ,  Kuo-Ching Huang

    IPC: H01L29/66 ,  H01L27/24 ,  H01L27/22

    CPC classification number: H01L27/2454 ,  H01L27/228 ,  H01L27/2463 ,  H01L29/4236 ,  H01L29/7827

    Abstract: Some embodiments of the present disclosure relate to a memory array comprising memory cells having vertical gate-all-around (GAA) selection transistors. In some embodiments, the memory array has a source region disposed within an upper surface of a semiconductor body, and a semiconductor pillar of semiconductor material extending outward from the upper surface of the semiconductor body and having a channel region and an overlying drain region. A gate region vertically overlies the source region at a position laterally separated from sidewalls of the channel region by a gate dielectric layer. A first metal contact couples the drain region to a data storage element that stores data. The vertical GAA selection transistors provide for good performance, while decreasing the size of the selection transistor relative to a planar MOSFET, so that the selection transistors do not negatively impact the size of the memory array.

    Abstract translation: 本公开的一些实施例涉及包括具有垂直栅极全周（GAA）选择晶体管的存储器单元的存储器阵列。 在一些实施例中，存储器阵列具有设置在半导体本体的上表面内的源极区域和从半导体本体的上表面向外延伸并具有沟道区域和上覆漏极区域的半导体材料的半导体柱。 栅极区域通过栅极介电层在与沟道区域的侧壁横向分离的位置处垂直地覆盖源极区域。 第一金属触点将漏极区域耦合到存储数据的数据存储元件。 垂直GAA选择晶体管提供良好的性能，同时相对于平面MOSFET减小选择晶体管的尺寸，使得选择晶体管不会对存储器阵列的尺寸产生负面影响。

    VERTICAL BJT FOR HIGH DENSITY MEMORY
    8.
    发明申请
    VERTICAL BJT FOR HIGH DENSITY MEMORY 有权
    用于高密度存储器的垂直BJT

    公开(公告)号：US20140177330A1

    公开(公告)日：2014-06-26

    申请号：US13723762

    申请日：2012-12-21

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Yu-Wei Ting ,  Chun-Yang Tsai ,  Kuo-Ching Huang

    IPC: H01L29/732 ,  H01L29/82 ,  H01L45/00 ,  G11C11/40

    CPC classification number: H01L29/732 ,  G11C11/161 ,  G11C11/40 ,  G11C13/0002 ,  G11C13/003 ,  G11C13/0069 ,  G11C2213/79 ,  H01L27/226 ,  H01L27/228 ,  H01L27/2436 ,  H01L27/2445 ,  H01L27/2454 ,  H01L29/66272 ,  H01L29/66333 ,  H01L29/82 ,  H01L45/04

    Abstract: Some aspects of this disclosure relate to a memory device. The memory device includes a collector region having a first conductivity type and which is coupled to a source line of the memory device. A base region is formed over the collector region and has a second conductivity type. A gate structure is coupled to the base region and acts as a shared word line for first and second neighboring memory cells of the memory device. First and second emitter regions are formed over the base region and have the first conductivity type. The first and second emitter regions are arranged on opposite sides of the gate structure. First and second contacts extend upwardly from the first and second emitter regions, respectively, and couple the first and second emitter regions to first and second data storage elements, respectively, of the first and second neighboring memory cells, respectively.

    Abstract translation: 本公开的一些方面涉及存储器设备。 存储器件包括具有第一导电类型并且耦合到存储器件的源极线的集电极区域。 基极区域形成在集电极区域上并且具有第二导电类型。 栅极结构耦合到基极区域并用作存储器件的第一和第二相邻存储器单元的共享字线。 第一和第二发射极区域形成在基极区域上并且具有第一导电类型。 第一和第二发射极区域布置在栅极结构的相对侧上。 第一和第二触点分别从第一和第二发射极区域向上延伸，并分别将第一和第二发射极区域分别耦合到第一和第二相邻存储器单元的第一和第二数据存储元件。

    Multi-step reset technique to enlarge memory window
    9.
    发明授权
    Multi-step reset technique to enlarge memory window 有权

    公开(公告)号：US11107528B2

    公开(公告)日：2021-08-31

    申请号：US17082232

    申请日：2020-10-28

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Chao-Yang Chen ,  Cheng-Jun Wu ,  Chun-Yang Tsai ,  Kuo-Ching Huang

    IPC: G11C11/00 ,  G11C13/00 ,  H01L45/00

    Abstract: In some embodiments, the present disclosure relates to a method, comprising the performing of a reset operation to a resistive random access memory (RRAM) cell. A first voltage bias having a first polarity is applied to the RRAM cell. An absolute value of the first voltage bias is greater than an absolute value of a first reset voltage. The application of the first voltage bias induces the RRAM cell to change from a low resistance to an intermediate resistance greater than the low resistance. A second voltage bias having a second polarity oppose to the first polarity is then applied to the RRAM cell. An absolute value of the second reset voltage is less than an absolute value of the second voltage bias and less than the absolute value of the first reset voltage. The application of the second voltage bias induces the RRAM cell to have a high resistance.

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