公开(公告)号：US09905606B2

公开(公告)日：2018-02-27

申请号：US15002755

申请日：2016-01-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Wenxu Xianyu ,  Yongyoung Park ,  Wooyoung Yang ,  Jeongyub Lee

IPC: H01L27/146 ,  H01L31/0352 ,  H01L31/0224 ,  H01L27/144

CPC classification number: H01L27/14647 ,  H01L27/1446 ,  H01L27/14601 ,  H01L27/14607 ,  H01L27/14627 ,  H01L27/14692 ,  H01L31/022408 ,  H01L31/022425 ,  H01L31/035227

Abstract: A photodetecting device, a method of manufacturing the photodetecting device, an image sensor, and a method of manufacturing the image sensor are provided. The photodetecting device includes a first insulation layer, a silicon layer disposed on the first insulation layer, a metal plug disposed through the first insulation layer and the silicon layer, a silicon wire disposed on the silicon layer, and an electrode connected to the silicon wire.

公开(公告)号：US12063793B2

公开(公告)日：2024-08-13

申请号：US17362075

申请日：2021-06-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kiyeon Yang ,  Bonwon Koo ,  Segab Kwon ,  Chungman Kim ,  Yongyoung Park ,  Dongho Ahn ,  Seunggeun Yu ,  Changseung Lee

IPC: H10B63/00 ,  H01L29/24 ,  H10N70/00 ,  H10N70/20

CPC classification number: H10B63/24 ,  H01L29/24 ,  H10N70/245 ,  H10N70/826 ,  H10N70/8833

Abstract: Provided are a chalcogen compound having ovonic threshold switching characteristics, and a switching device, a semiconductor device, and/or a semiconductor apparatus which include the chalcogen compound. The chalcogen compound includes five or more elements and may have stable switching characteristics with a low off-current value (leakage current value). The chalcogen compound includes: selenium (Se) and tellurium (Te); a first element comprising at least one of indium (In), aluminum (Al), strontium (Sr), and calcium (Ca); and a second element including germanium (Ge) and/or tin (Sn), and may further include at least one of arsenic (As), antimony (Sb), and bismuth (Bi).

公开(公告)号：US10541178B2

公开(公告)日：2020-01-21

申请号：US15635990

申请日：2017-06-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Xianyu Wenxu ,  Yongyoung Park ,  Kideok Bae ,  Wooyoung Yang ,  Changseung Lee

IPC: H01L21/66 ,  H01L51/00 ,  H01L51/52 ,  H01L21/67

Abstract: A method of evaluating the quality of a thin film layer may include: forming the thin film layer on a substrate; applying a stress to the thin film layer; and evaluating the quality of the thin film layer. A device for evaluating the quality of the thin film layer may include a stress chamber for applying a stress to the thin film layer and a refractive index measuring unit for evaluating the quality of the thin film layer based on a rate of change of a refractive index.

公开(公告)号：US20240046986A1

公开(公告)日：2024-02-08

申请号：US18157408

申请日：2023-01-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minwoo CHOI ,  Young Jae Kang ,  Bonwon Koo ,  Yongyoung Park ,  Hajun Sung ,  Dongho Ahn ,  Kiyeon Yang ,  Wooyoung Yang ,  Changseung Lee

IPC: G11C13/00 ,  H10B63/10

CPC classification number: G11C13/0069 ,  G11C13/0004 ,  H10B63/10 ,  G11C2213/30 ,  H10B63/84

Abstract: A memory device includes a memory cell including a selection layer and a phase change material layer, and a controller, wherein the selection layer includes a switching material, the phase change material layer includes a phase change material, and the controller is configured to apply a write pulse to the selection layer and the phase change material layer and control a polarity, a peak value, and a shape of the write pulse.

公开(公告)号：US20230329007A1

公开(公告)日：2023-10-12

申请号：US18176750

申请日：2023-03-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hajun SUNG ,  Youngjae Kang ,  Bonwon Koo ,  Yongyoung Park ,  Dongho Ahn ,  Kiyeon Yang ,  Wooyoung Yang ,  Changseung Lee ,  Minwoo Choi

IPC: H10B63/00 ,  H10B61/00

CPC classification number: H10B63/24 ,  H10B61/10 ,  H10B63/80

Abstract: A chalcogenide material according to one embodiment includes germanium (Ge); arsenic (As); sulfur (S); selenium (Se), and at least one group III metal selected from indium (In), gallium (Ga), and aluminum (Al), wherein the content of the Ge may be greater than about 10 at % and less than or equal to about 30 at %, the content of the As may be greater than about 30 at % and less than or equal to about 50 at %, the content of Se is greater than about 20 at % and less than or equal to about 60 at %, the content of S is greater than about 0.5 at % and less than or equal to about 10 at %, and the content of the group III metal may be in the range of 0.5 at % to 10 at %.

公开(公告)号：US12254922B2

公开(公告)日：2025-03-18

申请号：US18157408

申请日：2023-01-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minwoo Choi ,  Young Jae Kang ,  Bonwon Koo ,  Yongyoung Park ,  Hajun Sung ,  Dongho Ahn ,  Kiyeon Yang ,  Wooyoung Yang ,  Changseung Lee

IPC: G11C13/00 ,  H10B63/10 ,  H10B63/00

Abstract: A memory device includes a memory cell including a selection layer and a phase change material layer, and a controller, wherein the selection layer includes a switching material, the phase change material layer includes a phase change material, and the controller is configured to apply a write pulse to the selection layer and the phase change material layer and control a polarity, a peak value, and a shape of the write pulse.

公开(公告)号：US09722068B2

公开(公告)日：2017-08-01

申请号：US15026681

申请日：2014-09-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Xianyu Wenxu ,  Yongsung Kim ,  Changyoul Moon ,  Yongyoung Park ,  Wooyoung Yang ,  Jeongyub Lee ,  Jooho Lee

IPC: H01L29/78 ,  H01L29/45 ,  H01L29/66 ,  H01L29/778 ,  H01L29/06 ,  H01L29/16 ,  H01L21/306 ,  H01L21/3105 ,  H01L29/08 ,  H01L29/10 ,  H01L29/24 ,  H01L29/423 ,  H01L29/47

CPC classification number: H01L29/78 ,  H01L21/30625 ,  H01L21/31051 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/1033 ,  H01L29/1606 ,  H01L29/24 ,  H01L29/42364 ,  H01L29/4238 ,  H01L29/45 ,  H01L29/47 ,  H01L29/66045 ,  H01L29/7781

Abstract: Provided are semiconductor devices and methods of manufacturing the same. A semiconductor device may include a source, a drain, a semiconductor element between the source and the drain, and a graphene layer that is provided on the source and the semiconductor element and is spaced apart from the drain. Surfaces of the source and the drain are substantially co-planar with a surface of the semiconductor element. The semiconductor element may be spaced apart from the source and may contact the drain. The graphene layer may have a planar structure. A gate insulating layer and a gate may be provided on the graphene layer. The semiconductor device may be a transistor. The semiconductor device may have a barristor structure. The semiconductor device may be a planar type graphene barristor.