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公开(公告)号：US12063793B2
公开(公告)日：2024-08-13
申请号：US17362075
申请日：2021-06-29
发明人： Kiyeon Yang , Bonwon Koo , Segab Kwon , Chungman Kim , Yongyoung Park , Dongho Ahn , Seunggeun Yu , Changseung Lee
CPC分类号： H10B63/24 , H01L29/24 , H10N70/245 , H10N70/826 , H10N70/8833
摘要： Provided are a chalcogen compound having ovonic threshold switching characteristics, and a switching device, a semiconductor device, and/or a semiconductor apparatus which include the chalcogen compound. The chalcogen compound includes five or more elements and may have stable switching characteristics with a low off-current value (leakage current value). The chalcogen compound includes: selenium (Se) and tellurium (Te); a first element comprising at least one of indium (In), aluminum (Al), strontium (Sr), and calcium (Ca); and a second element including germanium (Ge) and/or tin (Sn), and may further include at least one of arsenic (As), antimony (Sb), and bismuth (Bi).
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公开(公告)号：US10976472B2
公开(公告)日：2021-04-13
申请号：US15805864
申请日：2017-11-07
发明人： Jeongyub Lee , Changseung Lee , Yongsung Kim , Jaekwan Kim , Byonggwon Song , Sanghoon Song , Kiyeon Yang
摘要： A meta-optical device and a method of manufacturing the same are provided. The method includes depositing a group III-V compound semiconductor on a substrate, forming an anti-oxidation layer, performing crystallization by using post annealing, removing the anti-oxidation layer, and manufacturing a meta-optical device by using patterning.
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公开(公告)号：US10670891B2
公开(公告)日：2020-06-02
申请号：US15632640
申请日：2017-06-26
申请人： SAMSUNG ELECTRONICS CO., LTD. , IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)
发明人： Kiyeon Yang , Youngsun Choi , Seokho Song , Jaewoong Yoon , Choloong Han , Yongsung Kim , Jeongyub Lee , Changseung Lee
摘要： Nonreciprocal optical transmission devices and optical apparatuses including the nonreciprocal optical transmission devices are provided. A nonreciprocal optical transmission device includes an optical input portion, an optical output portion, and an intermediate connecting portion interposed between the optical input portion and the optical output portion, and comprising optical waveguides. A complex refractive index of any one or any combination of the optical waveguides changes between the optical input portion and the optical output portion, and a transmission direction of light through the nonreciprocal optical transmission device is controlled by a change in the complex refractive index.
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公开(公告)号：US10392518B2
公开(公告)日：2019-08-27
申请号：US15499376
申请日：2017-04-27
发明人： Kunmo Chu , Byonggwon Song , Sunghoon Park , Kiyeon Yang , Changseung Lee
IPC分类号： H01B1/22 , C09D5/24 , C09D7/40 , C09D7/61 , C09D183/04 , H01L23/00 , C09D11/52 , H01R13/24 , H01B1/24 , H05K1/09 , H01L23/498 , H01L21/48 , C08K3/04 , C08K3/08 , C08K3/10 , H05K1/02 , H05K1/18
摘要： Provided are a paste material, a method of forming the paste material, a wiring member formed from the paste material, and an electronic device including the wiring member. The paste material may include a plurality of liquid metal particles and a polymer binder. The paste material may further include a plurality of nanofillers. At least some of the plurality of nanofillers may each have an aspect ratio equal to or greater than about 3. A content of the plurality of liquid metal particles may be greater than a content of the polymer binder and may be greater than a content of the plurality of nanofillers. The wiring member may be formed by using the paste material, and the wiring member may be used in various electronic devices.
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公开(公告)号：US20240107778A1
公开(公告)日：2024-03-28
申请号：US18298642
申请日：2023-04-11
发明人： Changseung LEE , Kiyeon Yang , Youngjae Kang , Hajun Sung , Dongho Ahn
摘要： A phase-change memory structure includes lower and upper electrodes spaced apart from each other, and a phase-change material stack between the lower and upper electrodes. The phase-change material stack includes a plurality of phase-change layers, at least two phase-change layers of the plurality of phase-change layers have different phase-change temperatures, and a plurality of barrier layers between the plurality of phase-change layers The at least two phase-change layers of the plurality of phase-change layers have different thicknesses.
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公开(公告)号：US11744167B2
公开(公告)日：2023-08-29
申请号：US17330950
申请日：2021-05-26
发明人： Kiyeon Yang , Dongho Ahn , Changseung Lee
CPC分类号： H10N70/8828 , H10B63/24 , H10B63/84 , H10N70/066 , H10N70/231 , H10N70/8413
摘要： Semiconductor unit devices may be arranged between a first insulating layer and a second insulating layer that are apart from each other in a direction normal to a substrate. Each of the semiconductor unit devices may include a selection device layer and a phase change material layer that extend side by side in a direction parallel to the substrate. The phase change material layer may have a superlattice-like structure. The phase change material layer may be arranged along a recess portion that is formed by the first insulating layer, the second insulating layer, and the selection device layer.
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公开(公告)号：US20240065118A1
公开(公告)日：2024-02-22
申请号：US18068821
申请日：2022-12-20
发明人： Hajun SUNG , Youngjae Kang , Changyup Park , Kiyeon Yang , Wooyoung Yang , Changseung Lee , Minwoo Choi
CPC分类号： H10N70/231 , H10N70/861 , H10N70/8828 , H10N70/8845 , H10B63/84
摘要： Provided are a phase change heterostructure and a phase change memory device including the same. The phase change memory device including the phase change heterostructure may include a plurality of memory cells. Each of the plurality of memory cells may include a first electrode and a second electrode, which may be spaced apart from each other, and a phase change heterostructure between the first electrode and the second electrode. The phase change heterostructure may include a plurality of phase change material layers and a plurality of thermal barrier layers alternately stacked on each other. A material of the plurality of thermal barrier layers have a thermal conductivity lower than a materials of the plurality of phase change material layers.
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公开(公告)号：US09658186B2
公开(公告)日：2017-05-23
申请号：US14972873
申请日：2015-12-17
发明人： Kiyeon Yang , Changseung Lee , Namjeong Kim , Yeonhee Kim
IPC分类号： H01L29/00 , G01N27/414 , H01L21/02 , H01L21/3065 , H01L29/786
CPC分类号： G01N27/4141 , C30B25/04 , C30B29/46 , C30B29/60 , H01L21/02568 , H01L21/0259 , H01L21/02614 , H01L21/0262 , H01L21/02631 , H01L21/3065 , H01L29/0665 , H01L29/24 , H01L29/66969 , H01L29/778 , H01L29/7851 , H01L29/78681 , H01L29/78684 , H01L29/78696
摘要： A transistor includes a substrate, a two-dimensional material including at least one layer that is substantially vertically aligned on the substrate such that an edge of the layer is on the substrate and the layer extends substantially vertical to the substrate, a source electrode and a drain electrode connected to opposite ends of the two-dimensional material, a gate insulation layer on the two-dimensional material between the source electrode and the drain electrode, and a gate electrode on the gate insulation layer. Each layer includes a semiconductor having a two-dimensional crystal structure.
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9.发明公开公开(公告)号：US20240057347A1
公开(公告)日：2024-02-15
申请号：US18348846
申请日：2023-07-07
发明人： Wooyoung YANG , Hyungjun Kim , Hajun Sung , Kiyeon Yang , Changseung Lee , Changyup Park , Seung-min Chung , Sangyoon Lee , Inkyu Sohn
CPC分类号： H10B63/10 , H10N70/231 , H10N70/8822 , H10N70/826 , H10N70/828 , H10B63/20 , H10N70/023 , H10N70/8825
摘要： A memory element includes a substrate, a first electrode formed on the substrate, a phase-change heterolayer formed on the first electrode and electrically connected to the first electrode, and a second electrode formed on the phase-change heterolayer, wherein the phase-change heterolayer includes one or more confinement material layers and one or more phase-change material layers, and the confinement material layer includes a metal chalcogenide film.
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公开(公告)号：US20240046986A1
公开(公告)日：2024-02-08
申请号：US18157408
申请日：2023-01-20
发明人： Minwoo CHOI , Young Jae Kang , Bonwon Koo , Yongyoung Park , Hajun Sung , Dongho Ahn , Kiyeon Yang , Wooyoung Yang , Changseung Lee
CPC分类号： G11C13/0069 , G11C13/0004 , H10B63/10 , G11C2213/30 , H10B63/84
摘要： A memory device includes a memory cell including a selection layer and a phase change material layer, and a controller, wherein the selection layer includes a switching material, the phase change material layer includes a phase change material, and the controller is configured to apply a write pulse to the selection layer and the phase change material layer and control a polarity, a peak value, and a shape of the write pulse.
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