公开(公告)号：US10788727B2

公开(公告)日：2020-09-29

申请号：US15809569

申请日：2017-11-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young Kim ,  Yunhee Kim ,  Hoon Song ,  Kanghee Won ,  Yeonhee Kim ,  Kideok Bae ,  Hongseok Lee

IPC: G02F1/29 ,  G02F1/31 ,  G02B30/00 ,  G02B30/22 ,  G02B30/27

Abstract: A liquid crystal light deflector includes a first electrode layer including a plurality of pattern electrodes arranged with a constant pitch in a first direction on a first substrate, a first alignment layer covering the first electrode layer and having a plurality of concave portions formed on an upper surface thereof and extending in parallel to a second direction perpendicular to the first direction, a liquid crystal layer including a plurality of liquid crystal molecules each having a long diameter substantially parallel to the concave portions on the first alignment layer, a second electrode layer, which is a common electrode, disposed on the liquid crystal layer, and a second substrate disposed on the second electrode layer.

公开(公告)号：US09658186B2

公开(公告)日：2017-05-23

申请号：US14972873

申请日：2015-12-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kiyeon Yang ,  Changseung Lee ,  Namjeong Kim ,  Yeonhee Kim

IPC: H01L29/00 ,  G01N27/414 ,  H01L21/02 ,  H01L21/3065 ,  H01L29/786

CPC classification number: G01N27/4141 ,  C30B25/04 ,  C30B29/46 ,  C30B29/60 ,  H01L21/02568 ,  H01L21/0259 ,  H01L21/02614 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/3065 ,  H01L29/0665 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/778 ,  H01L29/7851 ,  H01L29/78681 ,  H01L29/78684 ,  H01L29/78696

Abstract: A transistor includes a substrate, a two-dimensional material including at least one layer that is substantially vertically aligned on the substrate such that an edge of the layer is on the substrate and the layer extends substantially vertical to the substrate, a source electrode and a drain electrode connected to opposite ends of the two-dimensional material, a gate insulation layer on the two-dimensional material between the source electrode and the drain electrode, and a gate electrode on the gate insulation layer. Each layer includes a semiconductor having a two-dimensional crystal structure.