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公开(公告)号：US11808918B2
公开(公告)日：2023-11-07
申请号：US17499170
申请日：2021-10-12
发明人： Jaekwan Kim , Jeongyub Lee , Seunghoon Han , Yongsung Kim , Byunghoon Na , Jangwoo You , Changseung Lee
CPC分类号： G02B1/002 , G02B5/005 , G02B5/1814 , G02B27/4211 , B82Y20/00
摘要： Provided are meta-surface optical device and methods of manufacturing the same. The meta-surface optical device may include a meta-surface arranged on a region of a substrate and a light control member arranged around the meta-surface. The light control member may be arranged on or below the substrate. A material layer formed of the same material used to form the meta-surface may be disposed between the light control member and the substrate. Also, the meta-surface may be a first meta-surface arranged on an upper surface of the substrate, and a second meta-surface may be arranged on a bottom surface of the substrate. Also, the meta-surface may include a first meta-surface and at least one second meta-surface may formed on the first meta-surface, and the light control member may be arranged around the at least one second meta-surface.
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公开(公告)号：US10976472B2
公开(公告)日：2021-04-13
申请号：US15805864
申请日：2017-11-07
发明人： Jeongyub Lee , Changseung Lee , Yongsung Kim , Jaekwan Kim , Byonggwon Song , Sanghoon Song , Kiyeon Yang
摘要： A meta-optical device and a method of manufacturing the same are provided. The method includes depositing a group III-V compound semiconductor on a substrate, forming an anti-oxidation layer, performing crystallization by using post annealing, removing the anti-oxidation layer, and manufacturing a meta-optical device by using patterning.
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3.发明授权公开(公告)号：US10438715B2
公开(公告)日：2019-10-08
申请号：US14808360
申请日：2015-07-24
发明人： Eunhyoung Cho , Inyong Song , Changseung Lee , Chan Kwak , Jaekwan Kim , Jooho Lee , Jinyoung Hwang
IPC分类号： H01B1/22 , B82Y10/00 , B82Y40/00 , C23F1/14 , C23F1/30 , G06F3/041 , H01L29/41 , G06F3/044 , H01L31/0224 , C23F1/02 , C23F1/40 , H01L29/06 , H01L33/42
摘要： Example embodiments relate to a nanostructure including a conductive region and a nonconductive region, wherein the conductive region includes at least one first nanowire, and the nonconductive region includes at least one second nanowire that is at least partially sectioned, a method of preparing the nanostructure, and a panel unit including the nanostructure.
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公开(公告)号：US11947238B2
公开(公告)日：2024-04-02
申请号：US17469189
申请日：2021-09-08
发明人： Jeongyub Lee , Yongsung Kim , Jaekwan Kim , Changseung Lee
IPC分类号： G02F1/21
CPC分类号： G02F1/218
摘要： Provided are a multilayer thin-film structure and a phase shifting device using the same. The multilayer thin-film structure includes at least one crystallization preventing layer and at least one dielectric layer that are alternately stacked. The at least one crystallization preventing layer includes an amorphous material, and a thickness of the at least one crystallization preventing layer is less than a thickness of the at least one dielectric layer.
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公开(公告)号：US11137661B2
公开(公告)日：2021-10-05
申请号：US16406677
申请日：2019-05-08
发明人： Jeongyub Lee , Yongsung Kim , Jaekwan Kim , Changseung Lee
IPC分类号： G02F1/21
摘要： Provided are a multilayer thin-film structure and a phase shifting device using the same. The multilayer thin-film structure includes at least one crystallization preventing layer and at least one dielectric layer that are alternately stacked. The at least one crystallization preventing layer includes an amorphous material, and a thickness of the at least one crystallization preventing layer is less than a thickness of the at least one dielectric layer.
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公开(公告)号：US20240142311A1
公开(公告)日：2024-05-02
申请号：US18215477
申请日：2023-06-28
发明人： Jinmyoung Kim , Choongho Rhee , Byonggwon Song , Yongseop Yoon , Jaekwan Kim , Jangwoo You , Byungkyu Lee
IPC分类号： G01J5/22
CPC分类号： G01J5/22 , G01J2005/202
摘要： Provided are a long-wave infrared sensor and an electronic device including the same. The long-wave infrared sensor and the electronic device including the same include a pixel array including a plurality of pixels, an optical absorber layer arranged on the pixel array, and a drive circuit configured to drive the pixel array, wherein each of the plurality of pixels for a long-wave infrared sensor includes a lower electrode and an upper electrode which are arranged apart from each other, and a plurality of magnetic tunnel junction devices arranged regularly between the lower electrode and the upper electrode and electrically connected to each other in parallel, and the plurality of magnetic tunnel junction devices are arranged apart from each other with an empty space therebetween.
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公开(公告)号：US10459258B2
公开(公告)日：2019-10-29
申请号：US15668297
申请日：2017-08-03
发明人： Chanwook Baik , Changwon Lee , Heejeong Jeong , Jaekwan Kim , Byonggwon Song , Jeongyub Lee
摘要： A method of designing a meta optical device is provided. The method includes: setting, via a processor, design data for arrangement and dimensions of a nanostructure of the meta optical device, according to a function to be implemented by the meta optical device; obtaining a phase change graph with respect to a change in the dimensions; setting a shape dimension region with phase defect in the phase change graph; and substituting a shape dimension with phase defect, which is included in the shape dimension region with phase defect among the dimensions included in the design data, with a substitution value that is outside the shape dimension region with phase defect. Accordingly, a meta optical device having no phase defect is implemented.
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公开(公告)号：US11693237B2
公开(公告)日：2023-07-04
申请号：US17519347
申请日：2021-11-04
发明人： Jeongyub Lee , Reehyang Kim , Jonghwa Shin , Kiyeon Yang , Yongsung Kim , Jaekwan Kim , Changseung Lee , Narae Han
CPC分类号： G02B27/0025 , G02B1/002 , G02B3/02 , G02B5/0825
摘要： A phase shifting device may include a plurality of metal layers and a plurality of first dielectric layers, a metal layer of the plurality of metal layers and a first dielectric layer of the plurality of first dielectric layers being alternately stacked in a first direction, and a second dielectric layer disposed on a side surface of the stacked structure in a second direction, wherein the first dielectric layer includes a first material having a first dielectric constant and the second dielectric layer includes a second material having a second dielectric constant, and wherein the second dielectric constant is greater than the first dielectric constant.
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公开(公告)号：US11194153B2
公开(公告)日：2021-12-07
申请号：US16421857
申请日：2019-05-24
发明人： Jeongyub Lee , Reehyang Kim , Jonghwa Shin , Kiyeon Yang , Yongsung Kim , Jaekwan Kim , Changseung Lee , Narae Han
摘要： Provided in a phase shifting device including a plurality of metal layers and a plurality of first dielectric layers, a metal layer of the plurality of metal layers and a first dielectric layer of the plurality of first dielectric layers being alternately stacked in a first direction, and a second dielectric layer disposed on a side surface of the stacked structure in a second direction, wherein the first dielectric layer includes a first material having a first dielectric constant and the second dielectric layer includes a second material having a second dielectric constant, and wherein the second dielectric constant is greater than the first dielectric constant.
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公开(公告)号：US20200096833A1
公开(公告)日：2020-03-26
申请号：US16406677
申请日：2019-05-08
发明人： Jeongyub Lee , Yongsung Kim , Jaekwan Kim , Changseung Lee
IPC分类号： G02F1/21
摘要： Provided are a multilayer thin-film structure and a phase shifting device using the same. The multilayer thin-film structure includes at least one crystallization preventing layer and at least one dielectric layer that are alternately stacked. The at least one crystallization preventing layer includes an amorphous material, and a thickness of the at least one crystallization preventing layer is less than a thickness of the at least one dielectric layer.
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