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    Semiconductor devices
    1.
    发明授权
    Semiconductor devices 有权

    公开(公告)号：US11031502B2

    公开(公告)日：2021-06-08

    申请号：US16708717

    申请日：2019-12-10

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Sung Uk Jang ,  Young Dae Cho ,  Ki Hwan Kim ,  Su Jin Jung

    IPC: H01L29/78 ,  H01L29/08 ,  H01L29/786 ,  H01L29/423

    Abstract: A semiconductor device includes an active region extending in a first direction on a substrate, channel layers on the active region and spaced apart vertically, a gate structure intersecting the active region and the channel layers, the gate structure extending in a second direction and surrounding the channel layers, and a source/drain region on the active region at a side of the gate structure, the source/drain region contacting the channel layers, the source/drain region including first epitaxial layers having a first composition and including first layers on side surfaces of the channel layers and a second layer on the active region at a lower end of the source/drain region, and a second epitaxial layer having a second composition different from the first composition, the second epitaxial layer being between the first epitaxial layers in the first direction and being between the first epitaxial layers vertically in a third direction.

    Semiconductor devices
    2.
    发明授权
    Semiconductor devices 有权

    公开(公告)号：US11670716B2

    公开(公告)日：2023-06-06

    申请号：US17337759

    申请日：2021-06-03

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Sung Uk Jang ,  Young Dae Cho ,  Ki Hwan Kim ,  Su Jin Jung

    IPC: H01L29/78 ,  H01L29/08 ,  H01L29/786 ,  H01L29/423

    CPC classification number: H01L29/7851 ,  H01L29/0847 ,  H01L29/42392 ,  H01L29/78696

    Abstract: A semiconductor device includes an active region extending in a first direction on a substrate, channel layers on the active region and spaced apart vertically, a gate structure intersecting the active region and the channel layers, the gate structure extending in a second direction and surrounding the channel layers, and a source/drain region on the active region at a side of the gate structure, the source/drain region contacting the channel layers, the source/drain region including first epitaxial layers having a first composition and including first layers on side surfaces of the channel layers and a second layer on the active region at a lower end of the source/drain region, and a second epitaxial layer having a second composition different from the first composition, the second epitaxial layer being between the first epitaxial layers in the first direction and being between the first epitaxial layers vertically in a third direction.

    Semiconductor devices
    4.
    发明授权
    Semiconductor devices 有权

    公开(公告)号：US11239363B2

    公开(公告)日：2022-02-01

    申请号：US16598012

    申请日：2019-10-10

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Sung Uk Jang ,  Ki Hwan Kim ,  Su Jin Jung ,  Bong Soo Kim ,  Young Dae Cho

    IPC: H01L29/78 ,  H01L29/66 ,  H01L29/08 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  H01L21/02 ,  H01L29/24

    Abstract: A semiconductor device including an active region extending in a first direction on a substrate; a gate structure intersecting the active region and extending in a second direction on the substrate; and a source/drain region on the active region and at least one side of the gate structure, wherein the source/drain region includes a plurality of first epitaxial layers spaced apart from each other in the first direction, the plurality of first epitaxial layers including first impurities of a first conductivity type; and a second epitaxial layer filling a space between the plurality of first epitaxial layers, the second epitaxial layer including second impurities of the first conductivity type.

    Semiconductor device
    6.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US11916123B2

    公开(公告)日：2024-02-27

    申请号：US17383022

    申请日：2021-07-22

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Young Dae Cho ,  Ki Hwan Kim ,  Sung Uk Jang ,  Su Jin Jung

    IPC: H01L29/423 ,  H01L29/08 ,  H01L29/06 ,  H01L29/786

    CPC classification number: H01L29/42392 ,  H01L29/0847 ,  H01L29/78696

    Abstract: An integrated circuit device includes a substrate having source and drain recesses therein that are lined with respective silicon-germanium liners and filled with doped semiconductor source and drain regions. A stacked plurality of semiconductor channel layers are provided, which are separated vertically from each other within the substrate by corresponding buried insulated gate electrode regions that extend laterally between the silicon-germanium liners. An insulated gate electrode is provided on an uppermost one of the plurality of semiconductor channel layers. The silicon-germanium liners may be doped with carbon.

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