公开(公告)号：US09761719B2

公开(公告)日：2017-09-12

申请号：US14741454

申请日：2015-06-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Nam Kyu Kim ,  Dong Chan Suh ,  Kwan Heum Lee ,  Byeong Chan Lee ,  Cho Eun Lee ,  Su Jin Jung ,  Gyeom Kim ,  Ji Eon Yoon

IPC: H01L27/088 ,  H01L29/78 ,  H01L29/417 ,  H01L29/08 ,  H01L29/165

CPC classification number: H01L29/7848 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/41766 ,  H01L29/7834

Abstract: A semiconductor device may include: a semiconductor substrate, a device isolating layer embedded within the semiconductor substrate and defining an active region, a channel region formed in the active region, a gate electrode disposed above the channel region, a gate insulating layer provided between the channel region and the gate electrode, and a silicon germanium epitaxial layer adjacent to the channel region within the active region and including a first epitaxial layer containing a first concentration of germanium, a second epitaxial layer containing a second concentration of germanium, higher than the first concentration, and a third epitaxial layer containing a third concentration of germanium, lower than the second concentration, the first to third epitaxial layers being sequentially stacked on one another in that order.

公开(公告)号：US10269962B2

公开(公告)日：2019-04-23

申请号：US15335492

申请日：2016-10-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung Ryul Lee ,  Sang Moon Lee ,  Chul Kim ,  Ji Eon Yoon

IPC: H01L29/78 ,  H01L29/423

Abstract: A semiconductor device has a fin-type structure which extends in a first direction and includes a laminate of oxide and semiconductor patterns disposed one on another on a first region of a substrate, and a first gate electrode that extends longitudinally in a second direction different from the first direction on the fin-type structure. Each oxide pattern is an oxidized compound containing a first element.

公开(公告)号：US10014173B2

公开(公告)日：2018-07-03

申请号：US15363139

申请日：2016-11-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji Eon Yoon ,  Chul Kim ,  Sang Moon Lee ,  Seung Ryul Lee

IPC: H01L29/32 ,  H01L21/02

CPC classification number: H01L21/02639 ,  H01L21/02381 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/02538 ,  H01L21/02598 ,  H01L21/02642 ,  H01L21/02647 ,  H01L21/0265 ,  H01L29/32

Abstract: A semiconductor single crystal structure may include a substrate; a defect trapping stack disposed on the substrate; and a semiconductor single crystal disposed on the defect trapping stack, and having a lattice mismatch with a crystal of the substrate, in which the defect trapping stack may include a first dielectric layer disposed on the substrate, and having at least one first opening, a second dielectric layer disposed on the first dielectric layer, and having at least one second opening, a third dielectric layer disposed on the second dielectric layer, and having at least one third opening, and a fourth dielectric layer disposed on the third dielectric layer, and having at least one fourth opening, and in which the semiconductor single crystal may extend to a region of the substrate defined in the at least one first opening through the at least one first to fourth opening.

公开(公告)号：US10008600B2

公开(公告)日：2018-06-26

申请号：US15685459

申请日：2017-08-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Nam Kyu Kim ,  Dong Chan Suh ,  Kwan Heum Lee ,  Byeong Chan Lee ,  Cho Eun Lee ,  Su Jin Jung ,  Gyeom Kim ,  Ji Eon Yoon

IPC: H01L29/08 ,  H01L29/78 ,  H01L29/165 ,  H01L29/417

CPC classification number: H01L29/7848 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/41766 ,  H01L29/7834

Abstract: A semiconductor device may include: a semiconductor substrate, a device isolating layer embedded within the semiconductor substrate and defining an active region, a channel region formed in the active region, a gate electrode disposed above the channel region, a gate insulating layer provided between the channel region and the gate electrode, and a silicon germanium epitaxial layer adjacent to the channel region within the active region and including a first epitaxial layer containing a first concentration of germanium, a second epitaxial layer containing a second concentration of germanium, higher than the first concentration, and a third epitaxial layer containing a third concentration of germanium, lower than the second concentration, the first to third epitaxial layers being sequentially stacked on one another in that order.