公开(公告)号：US20230193466A1

公开(公告)日：2023-06-22

申请号：US18108989

申请日：2023-02-13

Applicant: Applied Materials, Inc.

Inventor： Nagarajan RAJAGOPALAN ,  Xinhai HAN ,  Michael Wenyoung TSIANG ,  Masaki OGATA ,  Zhijun JIANG ,  Juan Carlos ROCHA-ALVAREZ ,  Thomas NOWAK ,  Jianhua ZHOU ,  Ramprakash SANKARAKRISHNAN ,  Amit Kumar BANSAL ,  Jeongmin LEE ,  Todd EGAN ,  Edward W. BUDIARTO ,  Dmitriy PANASYUK ,  Terrance Y. LEE ,  Jian J. CHEN ,  Mohamad A. AYOUB ,  Heung Lak PARK ,  Patrick REILLY ,  Shahid SHAIKH ,  Bok Hoen KIM ,  Sergey STARIK ,  Ganesh BALASUBRAMANIAN

IPC: C23C16/52 ,  G01B11/06 ,  H01L21/687 ,  H01L21/67 ,  C23C16/509 ,  G01N21/55 ,  G01N21/65 ,  H01L21/00 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  C23C16/505 ,  C23C16/455

CPC classification number: C23C16/52 ,  G01B11/0683 ,  H01L21/687 ,  H01L21/67248 ,  H01L21/67253 ,  C23C16/5096 ,  G01N21/55 ,  G01N21/658 ,  G01B11/0625 ,  H01L21/00 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  C23C16/505 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/509 ,  G01N2201/1222

Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

公开(公告)号：US20170016118A1

公开(公告)日：2017-01-19

申请号：US15278455

申请日：2016-09-28

Applicant: Applied Materials, Inc.

Inventor： Nagarajan RAJAGOPALAN ,  Xinhai HAN ,  Michael Wenyoung TSIANG ,  Masaki OGATA ,  Zhijun JIANG ,  Juan Carlos ROCHA-ALVAREZ ,  Thomas NOWAK ,  Jianhua ZHOU ,  Ramprakash SANKARAKRISHNAN ,  Amit Kumar BANSAL ,  Jeongmin LEE ,  Todd EGAN ,  Edward BUDIARTO ,  Dmitriy PANASYUK ,  Terrance Y. LEE ,  Jian J. CHEN ,  Mohamad A. AYOUB ,  Heung Lak PARK ,  Patrick REILLY ,  Shahid SHAIKH ,  Bok Hoen KIM ,  Sergey STARIK ,  Ganesh BALASUBRAMANIAN

IPC: C23C16/52 ,  C23C16/46 ,  H01L21/687 ,  C23C16/458 ,  G01B11/06 ,  H01L21/67 ,  C23C16/455 ,  C23C16/509

CPC classification number: C23C16/52 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  C23C16/505 ,  C23C16/509 ,  C23C16/5096 ,  G01B11/0625 ,  G01B11/0683 ,  G01N21/55 ,  G01N21/658 ,  G01N2201/1222 ,  H01L21/00 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/687

Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

Abstract translation: 描述了根据PECVD工艺处理衬底的方法。 调整衬底的温度分布以改变衬底上的沉积速率分布。 调整等离子体密度分布以改变跨衬底的沉积速率分布。 暴露于等离子体的室表面被加热以改善等离子体密度均匀性并减少在室表面上形成低质量的沉积物。 原位计量可用于监测沉积过程的进展并触发涉及衬底温度曲线，等离子体密度分布，压力，温度和反应物流动的控制动作。

公开(公告)号：US20200173022A1

公开(公告)日：2020-06-04

申请号：US16678996

申请日：2019-11-08

Applicant: Applied Materials, Inc.

Inventor： Xinhai HAN ,  Deenesh PADHI ,  Daemian Raj BENJAMIN RAJ ,  Kristopher ENSLOW ,  Wenjiao WANG ,  Masaki OGATA ,  Sai Susmita ADDEPALLI ,  Nikhil Sudhindrarao JORAPUR ,  Gregory Eugene CHICHKANOFF ,  Shailendra SRIVASTAVA ,  Jonghoon BAEK ,  Zakaria IBRAHIMI ,  Juan Carlos ROCHA-ALVAREZ ,  Tza-Jing GUNG

IPC: C23C16/455 ,  H01L27/11524 ,  H01L27/1157 ,  H01L27/11578 ,  H01L27/11551 ,  C23C16/40 ,  C23C16/34 ,  H01J37/32

Abstract: Embodiments of the disclosure describe an apparatus and a method for depositing a film layer that may have minimum contribution to overlay error after a sequence of deposition and lithographic exposure processes. In one example, a method includes positioning a substrate on a substrate support in a process chamber, and flowing a deposition gas mixture comprising a silicon containing gas and a reacting gas to the process chamber through a showerhead having a convex surface facing the substrate support or a concave surface facing the substrate support in accordance with a stress profile of the substrate. A plasma is formed in the presence of the deposition gas mixture in the process chamber by applying an RF power to multiple coupling points of the showerhead that are symmetrically arranged about a center point of the showerhead. A deposition process is then performed on the substrate.

公开(公告)号：US20200043723A1

公开(公告)日：2020-02-06

申请号：US16515230

申请日：2019-07-18

Applicant: Applied Materials, Inc.

Inventor： Yongjing LIN ,  Tza-Jing GUNG ,  Masaki OGATA ,  Yusheng ZHOU ,  Xinhai HAN ,  Deenesh PADHI ,  Juan Carlos ROCHA ,  Amit Kumar BANSAL ,  Mukund SRINIVASAN

IPC: H01L21/02

Abstract: Embodiments described herein relate to manufacturing layer stacks of oxide/nitride (ON) layers with minimized in-plane distortion (IPD) and lithographic overlay errors. A method of forming a layer stack ON layers includes flowing a first silicon-containing gas, an oxygen-containing gas, and a first dilution gas. A RF power is symmetrically applied to form a first material layer of SiO2. A second silicon-containing gas, a nitrogen-containing gas, and a second dilution gas are flowed. A second RF power is symmetrically applied to form a second material layer of Si3N4. The flowing the first silicon-containing gas, the oxygen-containing gas, and the first dilution gas, the symmetrically applying the first RF power, the flowing the second silicon-containing gas, the nitrogen-containing gas, and the second dilution gas, and the symmetrically applying the second RF power is repeated until a desired number of first material layers and second material layers make up a layer stack.

公开(公告)号：US20240044000A1

公开(公告)日：2024-02-08

申请号：US18381534

申请日：2023-10-18

Applicant: Applied Materials, Inc.

Inventor： Shailendra SRIVASTAVA ,  Sai Susmita ADDEPALLI ,  Nikhil Sudhindrarao JORAPUR ,  Daemian Raj BENJAMIN RAJ ,  Amit Kumar BANSAL ,  Juan Carlos ROCHA-ALVAREZ ,  Gregory Eugene CHICHKANOFF ,  Xinhai HAN ,  Masaki OGATA ,  Kristopher ENSLOW ,  Wenjiao WANG

IPC: C23C16/455 ,  H01J37/32 ,  C23C16/50 ,  C23C16/458

CPC classification number: C23C16/45565 ,  H01J37/32458 ,  H01J37/3244 ,  C23C16/50 ,  C23C16/45536 ,  C23C16/4583 ,  H01J2237/3321

Abstract: A faceplate for a substrate process chamber comprises a first and second surface. The second surface is shaped such that the second surface includes a peak and a distance between the first and second surface varies across the width of the faceplate. The second surface of the faceplate is exposed to a processing volume of the process chamber. Further, the faceplate may be part of a lid assembly for the process chamber. The lid assembly may include a blocker plate facing the first surface of the faceplate. A distance between the blocker plate and the first surface is constant.

公开(公告)号：US20230123089A1

公开(公告)日：2023-04-20

申请号：US18083173

申请日：2022-12-16

Applicant: Applied Materials, Inc.

Inventor： Shailendra SRIVASTAVA ,  Sai Susmita ADDEPALLI ,  Nikhil Sudhindrarao JORAPUR ,  Daemian Raj Benjamin RAJ ,  Amit Kumar BANSAL ,  Juan Carlos ROCHA-ALVAREZ ,  Gregory Eugene CHICHKANOFF ,  Xinhai HAN ,  Masaki OGATA ,  Kristopher ENSLOW ,  Wenjiao WANG

IPC: C23C16/455 ,  H01J37/32 ,  C23C16/50 ,  C23C16/458

Abstract: A faceplate for a substrate process chamber comprises a first and second surface. The second surface is shaped such that the second surface includes a peak and a distance between the first and second surface varies across the width of the faceplate. The second surface of the faceplate is exposed to a processing volume of the process chamber. Further, the faceplate may be part of a lid assembly for the process chamber. The lid assembly may include a blocker plate facing the first surface of the faceplate. A distance between the blocker plate and the first surface is constant.

公开(公告)号：US20180258535A1

公开(公告)日：2018-09-13

申请号：US15976468

申请日：2018-05-10

Applicant: Applied Materials, Inc.

Inventor： Nagarajan RAJAGOPALAN ,  Xinhai HAN ,  Michael Wenyoung TSIANG ,  Masaki OGATA ,  Zhijun JIANG ,  Juan Carlos ROCHA-ALVAREZ ,  Thomas NOWAK ,  Jianhua ZHOU ,  Ramprakash SANKARAKRISHNAN ,  Amit Kumar BANSAL ,  Jeongmin LEE ,  Todd EGAN ,  Edward BUDIARTO ,  Dmitriy PANASYUK ,  Terrance Y. LEE ,  Jian J. CHEN ,  Mohamad A. AYOUB ,  Heung Lak PARK ,  Patrick REILLY ,  Shahid SHAIKH ,  Bok Hoen KIM ,  Sergey STARIK ,  Ganesh BALASUBRAMANIAN

IPC: C23C16/52 ,  G01B11/06 ,  H01L21/687 ,  C23C16/509 ,  C23C16/455 ,  C23C16/505 ,  C23C16/50 ,  C23C16/46 ,  C23C16/458 ,  G01N21/65 ,  G01N21/55 ,  H01L21/67 ,  H01L21/00

Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

公开(公告)号：US20160322200A1

公开(公告)日：2016-11-03

申请号：US15142022

申请日：2016-04-29

Applicant: Applied Materials, Inc.

Inventor： Kaushik ALAYAVALLI ,  Xinhai HAN ,  Praket P. JHA ,  Masaki OGATA ,  Zhijun JIANG ,  Allen KO ,  Ndanka O. MUKUTI ,  Thuy BRITCHER ,  Amit Kumar BANSAL ,  Ganesh BALASUBRAMANIAN ,  Juan Carlos ROCHA-ALVAREZ ,  Bok Hoen KIM

IPC: H01J37/32 ,  C23C16/509 ,  C23C16/455

CPC classification number: H01J37/3244 ,  C23C16/4404 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/509 ,  H01J37/32091

Abstract: A method and apparatus for a dual-channel showerhead is provided. In one embodiment the showerhead comprises a body comprising a conductive material having a plurality of first openings formed therethrough comprising a first gas channel and a plurality of second openings formed therethrough comprising a second gas channel that is fluidly separated from the first gas channel, wherein each of the first openings having a geometry that is different than each of the second openings.

Abstract translation: 提供了一种双通道花洒的方法和装置。 在一个实施例中，喷头包括主体，该主体包括导电材料，该导电材料具有多个形成的第一开口，其包括第一气体通道和穿过其中形成的多个第二开口，其包括与第一气体通道流体分离的第二气体通道， 的第一开口具有与每个第二开口不同的几何形状。

公开(公告)号：US20180233356A1

公开(公告)日：2018-08-16

申请号：US15889744

申请日：2018-02-06

Applicant: Applied Materials, Inc.

Inventor： Xinhai HAN ,  Deenesh PADHI ,  Masaki OGATA ,  Yinan ZHANG ,  Shaunak MUKHERJEE

IPC: H01L21/02 ,  H01L27/115 ,  H01J37/32

Abstract: In one implementation, a method comprising depositing one or more silicon oxide/silicon nitride containing stacks on a substrate positioned in a processing chamber is provided. Depositing the one or more silicon oxide/silicon nitride containing stacks comprises (a) energizing a first process gas into a first plasma, (b) depositing a first film layer over the substrate from the first plasma, (c) energizing a second process gas into a second plasma, wherein the second process gas comprises a compound having at least one silicon-nitrogen bond and (d) depositing a second film layer on the first film layer from the second plasma. The method further comprises repeating (a), (b), (c), and (d) until a predetermined number of first film layers and second film layers have been deposited on the substrate. The first film layer is a silicon oxide layer and the second film layer is a silicon nitride layer.

公开(公告)号：US20180066364A1

公开(公告)日：2018-03-08

申请号：US15802496

申请日：2017-11-03

Applicant: Applied Materials, Inc.

Inventor： Nagarajan RAJAGOPALAN ,  Xinhai HAN ,  Michael Wenyoung TSIANG ,  Masaki OGATA ,  Zhijun JIANG ,  Juan Carlos ROCHA-ALVAREZ ,  Thomas NOWAK ,  Jianhua ZHOU ,  Ramprakash SANKARAKRISHNAN ,  Amit Kumar BANSAL ,  Jeongmin LEE ,  Todd EGAN ,  Edward BUDIARTO ,  Dmitriy PANASYUK ,  Terrance Y. LEE ,  Jian J. CHEN ,  Mohamad A. AYOUB ,  Heung Lak PARK ,  Patrick REILLY ,  Shahid SHAIKH ,  Bok Hoen KIM ,  Sergey STARIK ,  Ganesh BALASUBRAMANIAN

IPC: C23C16/52 ,  H01L21/687 ,  G01B11/06 ,  H01L21/67 ,  G01N21/55 ,  G01N21/65 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  C23C16/505 ,  C23C16/455 ,  C23C16/509 ,  H01L21/00

CPC classification number: C23C16/52 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  C23C16/505 ,  C23C16/509 ,  C23C16/5096 ,  G01B11/0625 ,  G01B11/0683 ,  G01N21/55 ,  G01N21/658 ,  G01N2201/1222 ,  H01L21/00 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/687

Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.