公开(公告)号：US20180233356A1

公开(公告)日：2018-08-16

申请号：US15889744

申请日：2018-02-06

Applicant: Applied Materials, Inc.

Inventor： Xinhai HAN ,  Deenesh PADHI ,  Masaki OGATA ,  Yinan ZHANG ,  Shaunak MUKHERJEE

IPC: H01L21/02 ,  H01L27/115 ,  H01J37/32

Abstract: In one implementation, a method comprising depositing one or more silicon oxide/silicon nitride containing stacks on a substrate positioned in a processing chamber is provided. Depositing the one or more silicon oxide/silicon nitride containing stacks comprises (a) energizing a first process gas into a first plasma, (b) depositing a first film layer over the substrate from the first plasma, (c) energizing a second process gas into a second plasma, wherein the second process gas comprises a compound having at least one silicon-nitrogen bond and (d) depositing a second film layer on the first film layer from the second plasma. The method further comprises repeating (a), (b), (c), and (d) until a predetermined number of first film layers and second film layers have been deposited on the substrate. The first film layer is a silicon oxide layer and the second film layer is a silicon nitride layer.