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公开(公告)号：CN102751253A
公开(公告)日：2012-10-24
申请号：CN201210115677.0
申请日：2012-04-19
申请人： 英飞凌科技股份有限公司
IPC分类号： H01L23/488 , H01L23/49 , H01L21/48
CPC分类号： H01L24/05 , H01L24/06 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/37 , H01L24/43 , H01L24/45 , H01L24/73 , H01L2224/0401 , H01L2224/04026 , H01L2224/04042 , H01L2224/05017 , H01L2224/05147 , H01L2224/05166 , H01L2224/05179 , H01L2224/05184 , H01L2224/05558 , H01L2224/05564 , H01L2224/05679 , H01L2224/05681 , H01L2224/06181 , H01L2224/29111 , H01L2224/29179 , H01L2224/32245 , H01L2224/33181 , H01L2224/37147 , H01L2224/43826 , H01L2224/45015 , H01L2224/45147 , H01L2224/45565 , H01L2224/45572 , H01L2224/45664 , H01L2224/45679 , H01L2224/45681 , H01L2224/45686 , H01L2224/4569 , H01L2224/48247 , H01L2224/48463 , H01L2224/4847 , H01L2224/48879 , H01L2224/48881 , H01L2224/73263 , H01L2224/73265 , H01L2224/83801 , H01L2224/84801 , H01L2224/8592 , H01L2924/00011 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01041 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/013 , H01L2924/0132 , H01L2924/01327 , H01L2924/014 , H01L2924/10253 , H01L2924/10271 , H01L2924/10272 , H01L2924/10329 , H01L2924/14 , H01L2924/1461 , H01L2924/15747 , H01L2924/181 , Y10T428/2938 , H01L2924/01014 , H01L2924/01032 , H01L2924/01031 , H01L2924/00012 , H01L2224/05552 , H01L2924/00
摘要： 本发明公开了半导体器件和接合线。一种半导体器件包括半导体芯片、半导体芯片的接触垫、以及布置在接触垫上方的第一层。第一层包括铌、钽或包括铌和钽的合金。
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公开(公告)号：CN102751253B
公开(公告)日：2016-02-10
申请号：CN201210115677.0
申请日：2012-04-19
申请人： 英飞凌科技股份有限公司
IPC分类号： H01L23/488 , H01L23/49 , H01L21/48
CPC分类号： H01L24/05 , H01L24/06 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/37 , H01L24/43 , H01L24/45 , H01L24/73 , H01L2224/0401 , H01L2224/04026 , H01L2224/04042 , H01L2224/05017 , H01L2224/05147 , H01L2224/05166 , H01L2224/05179 , H01L2224/05184 , H01L2224/05558 , H01L2224/05564 , H01L2224/05679 , H01L2224/05681 , H01L2224/06181 , H01L2224/29111 , H01L2224/29179 , H01L2224/32245 , H01L2224/33181 , H01L2224/37147 , H01L2224/43826 , H01L2224/45015 , H01L2224/45147 , H01L2224/45565 , H01L2224/45572 , H01L2224/45664 , H01L2224/45679 , H01L2224/45681 , H01L2224/45686 , H01L2224/4569 , H01L2224/48247 , H01L2224/48463 , H01L2224/4847 , H01L2224/48879 , H01L2224/48881 , H01L2224/73263 , H01L2224/73265 , H01L2224/83801 , H01L2224/84801 , H01L2224/8592 , H01L2924/00011 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01041 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/013 , H01L2924/0132 , H01L2924/01327 , H01L2924/014 , H01L2924/10253 , H01L2924/10271 , H01L2924/10272 , H01L2924/10329 , H01L2924/14 , H01L2924/1461 , H01L2924/15747 , H01L2924/181 , Y10T428/2938 , H01L2924/01014 , H01L2924/01032 , H01L2924/01031 , H01L2924/00012 , H01L2224/05552 , H01L2924/00
摘要： 本发明公开了半导体器件和接合线。一种半导体器件包括半导体芯片、半导体芯片的接触垫、以及布置在接触垫上方的第一层。第一层包括铌、钽或包括铌和钽的合金。
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公开(公告)号：CN103928418B
公开(公告)日：2017-06-13
申请号：CN201410012444.7
申请日：2014-01-10
申请人： 英飞凌科技股份有限公司
CPC分类号： H01L24/45 , B32B15/01 , H01B1/02 , H01B1/023 , H01L24/48 , H01L24/85 , H01L2224/45014 , H01L2224/45015 , H01L2224/45028 , H01L2224/45138 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45155 , H01L2224/4516 , H01L2224/45164 , H01L2224/45169 , H01L2224/45171 , H01L2224/45173 , H01L2224/45176 , H01L2224/45178 , H01L2224/4518 , H01L2224/45181 , H01L2224/45184 , H01L2224/45218 , H01L2224/45223 , H01L2224/45224 , H01L2224/45238 , H01L2224/45239 , H01L2224/45244 , H01L2224/45247 , H01L2224/45255 , H01L2224/4526 , H01L2224/45264 , H01L2224/45269 , H01L2224/45271 , H01L2224/45273 , H01L2224/45276 , H01L2224/45278 , H01L2224/4528 , H01L2224/45281 , H01L2224/45284 , H01L2224/4556 , H01L2224/45565 , H01L2224/45618 , H01L2224/45623 , H01L2224/45624 , H01L2224/45638 , H01L2224/45639 , H01L2224/45644 , H01L2224/45647 , H01L2224/45655 , H01L2224/4566 , H01L2224/45664 , H01L2224/45666 , H01L2224/45669 , H01L2224/45671 , H01L2224/45673 , H01L2224/45676 , H01L2224/45678 , H01L2224/4568 , H01L2224/45681 , H01L2224/4847 , H01L2924/00011 , H01L2924/01004 , H01L2924/00 , H01L2924/00014 , H01L2924/01201 , H01L2924/01049 , H01L2924/01005 , H01L2924/01039
摘要： 本发明涉及一种键合引线（1）包括由第一材料制成的一根或多根单丝（10‑17），该一根或多根单丝嵌入到由第二材料制成的基体（20）中。该单丝（10‑17）中的每一根在1013.25hPa的压力下具有第一熔融温度。该基体（20）在1013.25hPa的压力下具有第二熔融温度。该第一熔融温度比该第二熔融温度高出至少450℃。
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公开(公告)号：CN103928418A
公开(公告)日：2014-07-16
申请号：CN201410012444.7
申请日：2014-01-10
申请人： 英飞凌科技股份有限公司
CPC分类号： H01L24/45 , B32B15/01 , H01B1/02 , H01B1/023 , H01L24/48 , H01L24/85 , H01L2224/45014 , H01L2224/45015 , H01L2224/45028 , H01L2224/45138 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45155 , H01L2224/4516 , H01L2224/45164 , H01L2224/45169 , H01L2224/45171 , H01L2224/45173 , H01L2224/45176 , H01L2224/45178 , H01L2224/4518 , H01L2224/45181 , H01L2224/45184 , H01L2224/45218 , H01L2224/45223 , H01L2224/45224 , H01L2224/45238 , H01L2224/45239 , H01L2224/45244 , H01L2224/45247 , H01L2224/45255 , H01L2224/4526 , H01L2224/45264 , H01L2224/45269 , H01L2224/45271 , H01L2224/45273 , H01L2224/45276 , H01L2224/45278 , H01L2224/4528 , H01L2224/45281 , H01L2224/45284 , H01L2224/4556 , H01L2224/45565 , H01L2224/45618 , H01L2224/45623 , H01L2224/45624 , H01L2224/45638 , H01L2224/45639 , H01L2224/45644 , H01L2224/45647 , H01L2224/45655 , H01L2224/4566 , H01L2224/45664 , H01L2224/45666 , H01L2224/45669 , H01L2224/45671 , H01L2224/45673 , H01L2224/45676 , H01L2224/45678 , H01L2224/4568 , H01L2224/45681 , H01L2224/4847 , H01L2924/00011 , H01L2924/01004 , H01L2924/00 , H01L2924/00014 , H01L2924/01201 , H01L2924/01049 , H01L2924/01005 , H01L2924/01039
摘要： 本发明涉及一种键合引线（1）包括由第一材料制成的一根或多根单丝（10-17），该一根或多根单丝嵌入到由第二材料制成的基体（20）中。该单丝（10-17）中的每一根在1013.25hPa的压力下具有第一熔融温度。该基体（20）在1013.25hPa的压力下具有第二熔融温度。该第一熔融温度比该第二熔融温度高出至少450℃。
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公开(公告)号：CN1317829A
公开(公告)日：2001-10-17
申请号：CN01119279.8
申请日：2001-04-04
申请人： 株式会社东金
CPC分类号： H05K1/0233 , H01L23/4952 , H01L23/66 , H01L24/43 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/745 , H01L2223/6611 , H01L2224/05554 , H01L2224/05568 , H01L2224/05573 , H01L2224/05599 , H01L2224/131 , H01L2224/432 , H01L2224/43826 , H01L2224/43827 , H01L2224/451 , H01L2224/45117 , H01L2224/45118 , H01L2224/45123 , H01L2224/45124 , H01L2224/45138 , H01L2224/45155 , H01L2224/45157 , H01L2224/4516 , H01L2224/45163 , H01L2224/45166 , H01L2224/45179 , H01L2224/45181 , H01L2224/45188 , H01L2224/4554 , H01L2224/456 , H01L2224/45617 , H01L2224/45618 , H01L2224/45623 , H01L2224/45624 , H01L2224/45655 , H01L2224/45657 , H01L2224/4566 , H01L2224/45663 , H01L2224/45666 , H01L2224/45679 , H01L2224/45681 , H01L2224/45686 , H01L2224/45693 , H01L2224/48091 , H01L2224/48247 , H01L2224/49175 , H01L2224/745 , H01L2224/85399 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01018 , H01L2924/01022 , H01L2924/01027 , H01L2924/01028 , H01L2924/0103 , H01L2924/01032 , H01L2924/01038 , H01L2924/01039 , H01L2924/01041 , H01L2924/01072 , H01L2924/01073 , H01L2924/01105 , H01L2924/014 , H01L2924/10161 , H01L2924/10253 , H01L2924/14 , H01L2924/181 , H01L2924/19042 , H01L2924/30107 , H01L2924/3011 , H03H2001/0092 , H01L2924/00 , H01L2924/00012 , H01L2924/013 , H01L2924/01008 , H01L2924/01009 , H01L2924/049 , H01L2924/053 , H01L2224/45015 , H01L2924/207
摘要： 本发明提供了高频电流抑制型电子元件及其接合线，当其工作在高频时，也能够完全抑制高频电流，从而防止电磁干扰的发生，半导体集成电路器件(IC)17工作在高频带内以高速运作，预定数量的引脚19具有高频电流抑制器21，以减弱经过引脚自身的高频电流。高频电流抑制器是一个磁性薄膜，其厚度范围在0.3至20微米内，并置于每一个引脚19的整个表面上，包括安装到用于安装(IC)17的印刷线路板23上的安装部分及含有与导电图25相接部分的边缘。在安装集成电路17的印刷线路板23的过程中，通过焊点27使引脚顶端与导电图相连，当工作频带小于几十MHz时，安装部分的附近具有传导性。
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