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公开(公告)号：CN1420555A
公开(公告)日：2003-05-28
申请号：CN02126233.0
申请日：1997-07-10
申请人： 富士通株式会社
CPC分类号： H01L21/568 , B29C43/18 , B29C2043/3444 , B29C2043/3628 , H01L21/56 , H01L21/561 , H01L21/563 , H01L21/566 , H01L21/6835 , H01L23/24 , H01L23/3107 , H01L23/3114 , H01L23/3121 , H01L23/3128 , H01L23/49572 , H01L23/4985 , H01L24/27 , H01L24/29 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/97 , H01L25/0657 , H01L25/105 , H01L29/0657 , H01L2221/68345 , H01L2221/68377 , H01L2224/02371 , H01L2224/0401 , H01L2224/0556 , H01L2224/16225 , H01L2224/16235 , H01L2224/16237 , H01L2224/274 , H01L2224/29111 , H01L2224/32225 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/50 , H01L2224/73104 , H01L2224/73203 , H01L2224/73204 , H01L2224/73253 , H01L2224/73265 , H01L2224/83101 , H01L2224/83102 , H01L2224/83191 , H01L2224/85001 , H01L2224/92125 , H01L2224/97 , H01L2225/06517 , H01L2225/0652 , H01L2225/06527 , H01L2225/06541 , H01L2225/06551 , H01L2225/06572 , H01L2225/06579 , H01L2225/06582 , H01L2225/06586 , H01L2225/06589 , H01L2225/1005 , H01L2225/1064 , H01L2225/107 , H01L2225/1082 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0133 , H01L2924/12042 , H01L2924/15153 , H01L2924/15165 , H01L2924/15173 , H01L2924/15174 , H01L2924/15192 , H01L2924/15311 , H01L2924/15312 , H01L2924/1532 , H01L2924/15331 , H01L2924/16195 , H01L2924/181 , H01L2924/18161 , H01L2924/3011 , H01L2924/3025 , H01L2924/3511 , H01L2224/85 , H01L2924/00 , H01L2924/01028 , H01L2924/3512 , H01L2224/81 , H01L2924/00012 , H01L2224/05552 , H01L2224/45015 , H01L2924/207
摘要： 具备下述工序：树脂密封工序，用于把已形成的配设有突出电极12的多个半导体器件11的衬底16装设到模具20的空腔28内，接着向突出电极12的配设位置供给树脂35密封突出电极12，形成树脂层13；突出电极露出工序，用于使已被树脂层13覆盖的突出电极12的至少顶端部分从树脂层13中露出来；分离工序，用于使衬底16与树脂层13一起切断分离成各个半导体器件。
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公开(公告)号：CN100428449C
公开(公告)日：2008-10-22
申请号：CN02126233.0
申请日：1997-07-10
申请人： 富士通株式会社
CPC分类号： H01L21/568 , B29C43/18 , B29C2043/3444 , B29C2043/3628 , H01L21/56 , H01L21/561 , H01L21/563 , H01L21/566 , H01L21/6835 , H01L23/24 , H01L23/3107 , H01L23/3114 , H01L23/3121 , H01L23/3128 , H01L23/49572 , H01L23/4985 , H01L24/27 , H01L24/29 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/97 , H01L25/0657 , H01L25/105 , H01L29/0657 , H01L2221/68345 , H01L2221/68377 , H01L2224/02371 , H01L2224/0401 , H01L2224/0556 , H01L2224/16225 , H01L2224/16235 , H01L2224/16237 , H01L2224/274 , H01L2224/29111 , H01L2224/32225 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/50 , H01L2224/73104 , H01L2224/73203 , H01L2224/73204 , H01L2224/73253 , H01L2224/73265 , H01L2224/83101 , H01L2224/83102 , H01L2224/83191 , H01L2224/85001 , H01L2224/92125 , H01L2224/97 , H01L2225/06517 , H01L2225/0652 , H01L2225/06527 , H01L2225/06541 , H01L2225/06551 , H01L2225/06572 , H01L2225/06579 , H01L2225/06582 , H01L2225/06586 , H01L2225/06589 , H01L2225/1005 , H01L2225/1064 , H01L2225/107 , H01L2225/1082 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0133 , H01L2924/12042 , H01L2924/15153 , H01L2924/15165 , H01L2924/15173 , H01L2924/15174 , H01L2924/15192 , H01L2924/15311 , H01L2924/15312 , H01L2924/1532 , H01L2924/15331 , H01L2924/16195 , H01L2924/181 , H01L2924/18161 , H01L2924/3011 , H01L2924/3025 , H01L2924/3511 , H01L2224/85 , H01L2924/00 , H01L2924/01028 , H01L2924/3512 , H01L2224/81 , H01L2924/00012 , H01L2224/05552 , H01L2224/45015 , H01L2924/207
摘要： 提供了一种半导体装置，其特征在于包括：在半导体器件上形成的多个电极焊盘；在上述半导体器件上与上述电极焊盘分开形成的多个突出电极；在电极焊盘和突出电极之间选择性形成的互连图形，用来互连上述电极焊盘和上述突出电极；以及在上述半导体器件的表面上形成的树脂层，所述树脂层至少覆盖上述电极焊盘和上述互连图形，并密封住上述突出电极的除了顶端部分以外的其它部分，其中，上述树脂层和上述半导体器件各自的侧面形成有用划片机切割所形成的切面。
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公开(公告)号：CN1420538A
公开(公告)日：2003-05-28
申请号：CN02126232.2
申请日：1997-07-10
申请人： 富士通株式会社
CPC分类号： H01L21/568 , B29C43/18 , B29C2043/3444 , B29C2043/3628 , H01L21/56 , H01L21/561 , H01L21/563 , H01L21/566 , H01L21/6835 , H01L23/24 , H01L23/3107 , H01L23/3114 , H01L23/3121 , H01L23/3128 , H01L23/49572 , H01L23/4985 , H01L24/27 , H01L24/29 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/97 , H01L25/0657 , H01L25/105 , H01L29/0657 , H01L2221/68345 , H01L2221/68377 , H01L2224/02371 , H01L2224/0401 , H01L2224/0556 , H01L2224/16225 , H01L2224/16235 , H01L2224/16237 , H01L2224/274 , H01L2224/29111 , H01L2224/32225 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/50 , H01L2224/73104 , H01L2224/73203 , H01L2224/73204 , H01L2224/73253 , H01L2224/73265 , H01L2224/83101 , H01L2224/83102 , H01L2224/83191 , H01L2224/85001 , H01L2224/92125 , H01L2224/97 , H01L2225/06517 , H01L2225/0652 , H01L2225/06527 , H01L2225/06541 , H01L2225/06551 , H01L2225/06572 , H01L2225/06579 , H01L2225/06582 , H01L2225/06586 , H01L2225/06589 , H01L2225/1005 , H01L2225/1064 , H01L2225/107 , H01L2225/1082 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0133 , H01L2924/12042 , H01L2924/15153 , H01L2924/15165 , H01L2924/15173 , H01L2924/15174 , H01L2924/15192 , H01L2924/15311 , H01L2924/15312 , H01L2924/1532 , H01L2924/15331 , H01L2924/16195 , H01L2924/181 , H01L2924/18161 , H01L2924/3011 , H01L2924/3025 , H01L2924/3511 , H01L2224/85 , H01L2924/00 , H01L2924/01028 , H01L2924/3512 , H01L2224/81 , H01L2924/00012 , H01L2224/05552 , H01L2224/45015 , H01L2924/207
摘要： 具备下述工序：树脂密封工序，用于把已形成的配设有突出电极12的多个半导体器件11的衬底16装设到模具20的空腔28内，接着向突出电极12的配设位置供给树脂35密封突出电极12，形成树脂层13；突出电极露出工序，用于使已被树脂层13覆盖的突出电极12的至少顶端部分从树脂层13中露出来；分离工序，用于使衬底16与树脂层13一起切断分离成各个半导体器件。
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公开(公告)号：CN1783470A
公开(公告)日：2006-06-07
申请号：CN200510118900.7
申请日：1997-07-10
申请人： 富士通株式会社
IPC分类号： H01L23/485
CPC分类号： H01L24/97 , H01L2224/16225 , H01L2224/32225 , H01L2224/45144 , H01L2224/48091 , H01L2224/73204 , H01L2224/92125 , H01L2924/181 , H01L2924/351 , H01L2924/00014 , H01L2924/00
摘要： 本发明提供了一种半导体装置，其特征是具备：在表面上形成有突出电极的半导体器件；以及形成在半导体器件的表面上、密封住除了突出电极的顶端部分的上述突出电极的树脂层；上述突出电极具有核心部分和在上述突出的核心部分表面上形成的导电膜。
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公开(公告)号：CN1264923A
公开(公告)日：2000-08-30
申请号：CN00102404.3
申请日：2000-02-23
申请人： 富士通株式会社
IPC分类号： H01L23/50 , H01L23/522 , H01L21/50 , H01L21/32 , H01L21/768
CPC分类号： H01L24/10 , H01L23/3114 , H01L24/02 , H01L24/06 , H01L24/13 , H01L24/48 , H01L25/0657 , H01L2224/02375 , H01L2224/0401 , H01L2224/04042 , H01L2224/05599 , H01L2224/13 , H01L2224/13099 , H01L2224/16145 , H01L2224/274 , H01L2224/48091 , H01L2224/48145 , H01L2224/48227 , H01L2224/48465 , H01L2224/731 , H01L2224/73265 , H01L2224/85399 , H01L2225/06506 , H01L2225/0651 , H01L2225/06513 , H01L2225/06517 , H01L2225/06524 , H01L2225/06527 , H01L2225/06572 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/181 , H01L2924/19043 , H01L2924/30105 , H01L2924/30107 , H01L2924/00 , H01L2924/00012 , H01L2224/45015 , H01L2924/207 , H01L2224/45099
摘要： 在本发明的半导体器件及其制造方法中,在半导体衬底(11)中设置具有多个端子的电路;在该衬底上设置与电路的端子相连接的内部布线图案(12);在衬底上设置覆盖衬底的保护层(14);在衬底上设置从保护层上伸出并与内部布线图案相连接的通路(13);在保护层上设置与通路相连接的外部布线图案(15);在外部布线图案上设置伸出电极(16);并在保护层上设置覆盖伸出电极的侧面和外部布线图案的外表面的树脂封闭层(17)。
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公开(公告)号：CN1198839A
公开(公告)日：1998-11-11
申请号：CN97191078.2
申请日：1997-07-10
申请人： 富士通株式会社
CPC分类号： H01L21/568 , B29C43/18 , B29C2043/3444 , B29C2043/3628 , H01L21/56 , H01L21/561 , H01L21/563 , H01L21/566 , H01L21/6835 , H01L23/24 , H01L23/3107 , H01L23/3114 , H01L23/3121 , H01L23/3128 , H01L23/49572 , H01L23/4985 , H01L24/27 , H01L24/29 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/97 , H01L25/0657 , H01L25/105 , H01L29/0657 , H01L2221/68345 , H01L2221/68377 , H01L2224/02371 , H01L2224/0401 , H01L2224/0556 , H01L2224/16225 , H01L2224/16235 , H01L2224/16237 , H01L2224/274 , H01L2224/29111 , H01L2224/32225 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/50 , H01L2224/73104 , H01L2224/73203 , H01L2224/73204 , H01L2224/73253 , H01L2224/73265 , H01L2224/83101 , H01L2224/83102 , H01L2224/83191 , H01L2224/85001 , H01L2224/92125 , H01L2224/97 , H01L2225/06517 , H01L2225/0652 , H01L2225/06527 , H01L2225/06541 , H01L2225/06551 , H01L2225/06572 , H01L2225/06579 , H01L2225/06582 , H01L2225/06586 , H01L2225/06589 , H01L2225/1005 , H01L2225/1064 , H01L2225/107 , H01L2225/1082 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0133 , H01L2924/12042 , H01L2924/15153 , H01L2924/15165 , H01L2924/15173 , H01L2924/15174 , H01L2924/15192 , H01L2924/15311 , H01L2924/15312 , H01L2924/1532 , H01L2924/15331 , H01L2924/16195 , H01L2924/181 , H01L2924/18161 , H01L2924/3011 , H01L2924/3025 , H01L2924/3511 , H01L2224/85 , H01L2924/00 , H01L2924/01028 , H01L2924/3512 , H01L2224/81 , H01L2924/00012 , H01L2224/05552 , H01L2224/45015 , H01L2924/207
摘要： 具备下述工序:树脂密封工序,用于把已形成的配设有突出电极12的多个半导体器件11的衬底16装设到模具20的空腔28内,接着向突出电极12的配设位置供给树脂35密封突出电极12,形成树脂层13;突出电极露出工序,用于使已被树脂层13覆盖的突出电极12的至少顶端部分从树脂层13中露出来;分离工序,用于使衬底16与树脂层13一起切断分离成各个半导体器件。
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公开(公告)号：CN1855466A
公开(公告)日：2006-11-01
申请号：CN200510120001.0
申请日：1997-07-10
申请人： 富士通株式会社
IPC分类号： H01L23/485
CPC分类号： H01L24/97 , H01L2224/16225 , H01L2224/32225 , H01L2224/45144 , H01L2224/48091 , H01L2224/73204 , H01L2224/92125 , H01L2924/181 , H01L2924/351 , H01L2924/00014 , H01L2924/00
摘要： 本发明提供了一种半导体装置，其特征是具备：在表面上形成有突出电极的半导体器件；在半导体器件的表面上形成的剩下上述突出电极的顶端部分来密封上述突出电极的树脂层；以及上述半导体器件的定位突起，上述突起形成在上述半导体器件的上述表面上，并具有从上述树脂层暴露的顶端部分。
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公开(公告)号：CN100452376C
公开(公告)日：2009-01-14
申请号：CN200510120001.0
申请日：1997-07-10
申请人： 富士通株式会社
IPC分类号： H01L23/485
CPC分类号： H01L24/97 , H01L2224/16225 , H01L2224/32225 , H01L2224/45144 , H01L2224/48091 , H01L2224/73204 , H01L2224/92125 , H01L2924/181 , H01L2924/351 , H01L2924/00014 , H01L2924/00
摘要： 本发明提供了一种半导体装置，其特征是具备：在表面上形成有突出电极的半导体器件；在半导体器件的表面上形成的剩下上述突出电极的顶端部分来密封上述突出电极的树脂层；以及上述半导体器件的定位突起，上述突起形成在上述半导体器件的上述表面上，并具有从上述树脂层暴露的顶端部分。
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公开(公告)号：CN1110846C
公开(公告)日：2003-06-04
申请号：CN97191078.2
申请日：1997-07-10
申请人： 富士通株式会社
CPC分类号： H01L21/568 , B29C43/18 , B29C2043/3444 , B29C2043/3628 , H01L21/56 , H01L21/561 , H01L21/563 , H01L21/566 , H01L21/6835 , H01L23/24 , H01L23/3107 , H01L23/3114 , H01L23/3121 , H01L23/3128 , H01L23/49572 , H01L23/4985 , H01L24/27 , H01L24/29 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/97 , H01L25/0657 , H01L25/105 , H01L29/0657 , H01L2221/68345 , H01L2221/68377 , H01L2224/02371 , H01L2224/0401 , H01L2224/0556 , H01L2224/16225 , H01L2224/16235 , H01L2224/16237 , H01L2224/274 , H01L2224/29111 , H01L2224/32225 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/50 , H01L2224/73104 , H01L2224/73203 , H01L2224/73204 , H01L2224/73253 , H01L2224/73265 , H01L2224/83101 , H01L2224/83102 , H01L2224/83191 , H01L2224/85001 , H01L2224/92125 , H01L2224/97 , H01L2225/06517 , H01L2225/0652 , H01L2225/06527 , H01L2225/06541 , H01L2225/06551 , H01L2225/06572 , H01L2225/06579 , H01L2225/06582 , H01L2225/06586 , H01L2225/06589 , H01L2225/1005 , H01L2225/1064 , H01L2225/107 , H01L2225/1082 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0133 , H01L2924/12042 , H01L2924/15153 , H01L2924/15165 , H01L2924/15173 , H01L2924/15174 , H01L2924/15192 , H01L2924/15311 , H01L2924/15312 , H01L2924/1532 , H01L2924/15331 , H01L2924/16195 , H01L2924/181 , H01L2924/18161 , H01L2924/3011 , H01L2924/3025 , H01L2924/3511 , H01L2224/85 , H01L2924/00 , H01L2924/01028 , H01L2924/3512 , H01L2224/81 , H01L2924/00012 , H01L2224/05552 , H01L2224/45015 , H01L2924/207
摘要： 一种半导体装置的制造方法，具备下述工序：树脂密封工序，用于把已形成的配设有突出电极12的多个半导体器件11的衬底16装设到模具20的空腔28内，接着向突出电极12的配设位置供给树脂35密封突出电极12，形成树脂层13；突出电极露出工序，用于使已被树脂层13覆盖的突出电极12的至少顶端部分从树脂层13中露出来；分离工序，用于使衬底16与树脂层13一起切断分离成各个半导体器件。
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