Abstract:
Lithography system, sensor and method for measuring properties of a massive amount of charged particle beams of a charged particle beam system, in particular a direct write lithography system, in which
the charged particle beams are converted into light beams by using a converter element, using an array of light sensitive detectors such as diodes, CCD or CMOS devices, located in line with said converter element, for detecting said light beams, electronically reading out resulting signals from said detectors after exposure thereof by said light beams, utilizing said signals for determining values for one or more beam properties, thereby using an automated electronic calculator, and electronically adapting the charged particle system so as to correct for out of specification range values for all or a number of said charged particle beams, each for one or more properties, based on said calculated property values.
Abstract:
The present disclosure is to provide a method of configuring timing of uplink (UL) transmission, comprising, receiving, by a user equipment (UE), configuration information on carrier aggregation (CA) of at least one frequency division duplex (FDD) cell and at least one time division duplex (TDD) cell; and adjusting, by the UE, starting timing of a UL subframe in a cell participating in the CA.
Abstract:
An ion spectrometer is provided, comprising: an ion source, arranged to generate ions continuously with a first range of mass to charge ratios; and an ion trap, arranged to receive ions from the ion source along an axis, and to eject ions with a second range of mass to charge ratios orthogonally to that axis, the second range of mass to charge ratios being narrower than the first range of mass to charge ratios. In some embodiments, ions generated by the ion source continuously flow into the ion trap. Additionally or alternatively, ion optics receive ions ejected from the ion trap and cool the ions without substantial fragmentation. An ion analyzer receives ions ejected from the ion trap or ion optics and separates the ions in accordance with at least one characteristic of the ions.
Abstract:
While applying a square wave voltage to the ion electrode (21) so that ions already captured in the ion trap (20) do not disperse, the frequency of the square wave voltage is temporarily increased at the timing when the ions generated in response to the short time irradiation of a laser light reach the ion inlet (25). This decreases the Mathieu parameter qz, and the potential well becomes shallow, which makes it easy for ions to enter the ion trap (20). Although the ions that have been already captured become more likely to disperse, the frequency of the square wave voltage is decreased before they deviate from the stable orbit. Thus, the dispersion of the ions can also be avoided. Accordingly, while the number of captured ions is not decreased, new ions are further added, and thereby the amount of ions can be increased. By performing a mass separation and detection after that, the signal intensity in one mass analysis can be increased. Thereby, the number of repetition of the mass analysis for summing up the mass profiles can be decreased, and the signal intensity can be increased while decreasing the measuring time.
Abstract:
A band pass filter includes a first electrode, a second electrode, and a plasma generated by the first and second electrode. The plasma is confined to a region of space through which electromagnetic waves having a frequency above an intrinsic plasma frequency are transmitted, and electromagnetic waves having a frequency below the intrinsic plasma frequency are reflected. The band pass filter may be implemented in a photo lithography tool between a source module and an exposure module. The plasma of the band pass filter may be adapted to reduce IR radiation (or other out of band radiation) exposure to the exposure module by reflecting IR radiation back to the radiation source. In an extreme ultraviolet photo lithography tool, the plasma of the band pass filter may be adapted to transmit EUV radiation.
Abstract:
The invention relates to a pumped electron source (1) that comprises an ionisation chamber (4), an acceleration chamber (2) with an electrode (3) for extracting and accelerating primary ions and forming a secondary-electron beam, characterised in that said pumped electron source (1) comprises a power supply (11) adapted for applying to said electrode (3) a positive voltage for urging a primary plasma (17) outside the acceleration chamber (2), and a negative voltage pulse for extracting and accelerating the primary ions and forming a secondary-electron beam.
Abstract:
The power supply device (14) for an ion-bombardment-induced secondary-emission electron source in a low-pressure chamber comprises a control input, two high-voltage outputs, a means for generating a plurality of positive pulses on a high-voltage output, and a means for generating a negative pulse on the other high-voltage output after at least some of the positive pulses.
Abstract:
A neutron chopper according to the present invention includes a housing which internally forms a sealed space, the housing having window portions through which neutrons pass, a fixed shaft which is fixed inside the housing, a rotor which is rotatably supported by the fixed shaft, the rotor provided with a blocking portion which can block neutrons passing through the housing, and a motor which is provided inside the housing for rotating the rotor of the neutron chopper, where a stator of the motor is fixed to the fixed shaft, and a rotor of the motor receives a rotating force from the stator around the fixed shaft, and is fixed to the rotor of the neutron chopper. The neutron chopper is formed with small size, and neutron guides are easily disposed closely, consequently vacuum leak is hardly occurred in the neutron chopper.
Abstract:
A particle-optical arrangement comprises a charged-particle source for generating a beam of charged particles; a multi-aperture plate arranged in a beam path of the beam of charged particles, wherein the multi-aperture plate has a plurality of apertures formed therein in a predetermined first array pattern, wherein a plurality of charged-particle beamlets is formed from the beam of charged particles downstream of the multi-aperture plate, and wherein a plurality of beam spots is formed in an image plane of the apparatus by the plurality of beamlets, the plurality of beam spots being arranged in a second array pattern; and a particle-optical to element for manipulating the beam of charged particles and/or the plurality of beamlets; wherein the first array pattern has a first pattern regularity in a first direction, and the second array pattern has a second pattern regularity in a second direction electron-optically corresponding to the first direction, and wherein the second regularity is higher than the first regularity.
Abstract:
A radiation attenuation corridor couples a radiation therapy room and a control room. The radiation attenuation corridor is made of a material that substantially absorbs ionizing radiation and substantially blocks the transmission of the ionizing radiation. Specific wall portions at the entrance of the corridor are covered with borated polyethylene (BPE). Specific wall portions diverge from an axis defined by the corridor by from about 10 degrees to about 45 degrees. The corridor thus leads out of the room and angles laterally across the wall of the therapy room, before angling again and opening to a safe room. The added angles in the radiation corridor increase the distance of radiation travel, and make the path more indirect, thereby increasing the contact of the radiation emissions with the radiation shielding and further attenuating the radiation.