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1.发明公开公开(公告)号：US20240361695A1
公开(公告)日：2024-10-31
申请号：US18644370
申请日：2024-04-24
申请人： ASM IP Holding B.V.
CPC分类号： G03F7/167 , G03F7/0043 , G03F7/0751 , G03F7/0755
摘要： Methods of forming structures including an adhesion layer and structures including the adhesion layer are disclosed. The adhesion layer may include nitrogen. The method can include forming a metal oxide resist overlying and in contact with the adhesion layer. Exemplary methods further include forming the photoresist underlayer.
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2.发明公开公开(公告)号：US20240361689A1
公开(公告)日：2024-10-31
申请号：US18382720
申请日：2023-10-23
发明人： Heejo MOON , Baek Soung PARK , Juho JUNG , Chang-Hyun KWON , Kwangwon SEO
IPC分类号： G03F7/004 , C07D401/14 , G03F7/00 , G03F7/027
CPC分类号： G03F7/0048 , C07D401/14 , G03F7/0007 , G03F7/027 , G02B5/223
摘要： a photosensitive resin composition, a photosensitive resin layer, and a color filter manufactured using the same, the photosensitive resin composition includes a colorant; a photopolymerizable compound; a photopolymerization initiator; a binder resin; and a solvent; wherein the colorant includes a pigment, a dispersant, and a dispersion aid represented by Chemical Formula 1:
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公开(公告)号：US12129240B2
公开(公告)日：2024-10-29
申请号：US17419504
申请日：2019-12-16
申请人： SAN-APRO LTD.
发明人： Takuto Nakao
CPC分类号： C07D333/78 , G03F7/0045 , G03F7/0392 , G03F7/322 , G03F7/38 , G03F7/40
摘要： Provided are a novel sulfonium salt having high photosensitivity to g-rays or h-rays; a novel photoacid generator containing a sulfonium salt that has high photosensitivity to g-rays or h-rays, has high solubility in solvents and cationically polymerizable compounds such as epoxy compounds, and has an excellent storage stability in compositions containing the cationically polymerizable compounds; and the like. The present invention relates to a sulfonium salt represented by the formula (1), a photoacid generator containing the sulfonium salt, and the like.
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4.发明公开公开(公告)号：US20240355644A1
公开(公告)日：2024-10-24
申请号：US18640443
申请日：2024-04-19
CPC分类号： H01L21/67017 , G03F7/0042 , G03F7/30 , G03F7/36 , G03F7/38 , G03F7/70716 , G03F7/7075 , G03F7/70866 , G03F7/70933 , G03F7/70991 , H01L21/67225 , H01L21/67769 , H01L21/67778
摘要： A substrate processing system provided with a plurality of apparatuses to perform a patterning on a plurality of the substrates, wherein a transfer container accommodating the plurality of substrates is transferred to the plurality of apparatuses in a sequential manner. The substrate processing system includes: a first apparatus of the plurality of apparatuses, which is configured to form a metal-containing resist film on each substrate; a second apparatus of the plurality of apparatuses, which is configured to perform a development on the metal-containing resist film after exposure; and an atmosphere regulator having an accommodation space where the substrates, on each of which the metal-containing resist film before being subjected to the development is formed, are accommodated and configured to regulate an atmosphere of the accommodation space so as to regulate a degree of progress of a reaction of the metal-containing resist film on each substrate.
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公开(公告)号：US20240353755A1
公开(公告)日：2024-10-24
申请号：US18137288
申请日：2023-04-20
发明人： Shi-Cheng WANG , Cheng-Han Wu , Ching-Yu Chang , Ya-Ching Chang
IPC分类号： G03F7/11 , G03F7/004 , H01L21/027 , H01L21/033
CPC分类号： G03F7/11 , G03F7/0042 , H01L21/0274 , H01L21/0337
摘要： A method includes forming a metallic resist layer over a substrate and patterning the metallic resist layer to form a metallic resist pattern over the substrate. An etch resistant layer composition including an inorganic component, an organic component, or a combination thereof is formed over the metallic resist pattern to form an etch resistant layer.
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公开(公告)号：US20240353753A1
公开(公告)日：2024-10-24
申请号：US18621915
申请日：2024-03-29
申请人： FUJIFILM Corporation
发明人： Asahi TAKAKI , Hideaki TSUBAKI , Takamitsu TOMIGA
IPC分类号： G03F7/004
CPC分类号： G03F7/0045
摘要： An actinic ray-sensitive or radiation-sensitive resin composition having a concentration of solid contents of 15% or more, the resin composition containing (A) a resin including a repeating unit (a1) having an acid-decomposable group and a repeating unit (a2) having an aromatic ring, (B) a resin including a repeating unit (b1) represented by a specified general formula (1), and (C) a compound that generates an acid upon irradiation with an actinic ray or a radiation. A content of a repeating unit having an acid-decomposable group and included in the resin (B) is 5 mol % or less relative to all repeating units in the resin (B), and the resin (B) has a dispersity of less than 3.0.
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7.发明公开公开(公告)号：US20240345477A1
公开(公告)日：2024-10-17
申请号：US18587235
申请日：2024-02-26
发明人： Dong Wan RYU , Young Keun KIM , Seol Hee LIM , Soobin LIM , Sukil KANG
CPC分类号： G03F7/0042 , G03F7/0048 , G03F7/027 , G03F7/2006
摘要： Disclosed are a semiconductor photoresist composition including an organometallic compound represented by Chemical Formula 1, and a solvent, a method of forming patterns using the same.
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公开(公告)号：US20240337933A1
公开(公告)日：2024-10-10
申请号：US18536373
申请日：2023-12-12
发明人： Ran NAMGUNG , Kyoungjin HA , Hyeon PARK , Daeseok SONG , Minsoo KIM , Sanghyun JE , Jun Soo KIM , Soyeon YOO , Su Min PARK , Suk-Koo Hong
IPC分类号： G03F7/004 , C08F114/16 , C08F220/18 , C08F220/22 , C08K5/05 , C08K5/06 , H01L21/027
CPC分类号： G03F7/0048 , C08F114/16 , C08F220/1806 , C08F220/22 , C08K5/05 , C08K5/06 , H01L21/0274
摘要： A resist topcoat composition and a method of forming patterns utilizing the resist topcoat composition are provided. The resist topcoat composition includes a copolymer including a first structural unit represented by Chemical Formula M-1 and a second structural unit represented by Chemical Formula M-2; and a solvent.
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9.发明公开公开(公告)号：US20240337929A1
公开(公告)日：2024-10-10
申请号：US18744513
申请日：2024-06-14
发明人： Jaehyun KIM , Myoung Hyun HUR , Jeong Sik KIM , Min Ja YOO , Hyung Kun LEE , Chanhyuk JI , Gyeonghun JANG , Jeongmin HA
IPC分类号： G03F7/004
CPC分类号： G03F7/0045 , G03F7/0048
摘要： A photoacid generator including an anion having a novel structure having a specific polar functional group such as a sulfonate group is provided. A photoresist composition comprising the same and a method for forming a photoresist pattern are also provided.
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公开(公告)号：US20240337925A1
公开(公告)日：2024-10-10
申请号：US18745039
申请日：2024-06-17
申请人： Inpria Corporation
CPC分类号： G03F7/0042 , C07F7/226 , G03F7/0045 , G03F7/0048 , G03F7/162 , G03F7/167 , G03F7/2004 , G03F7/32
摘要： Patterning with UV and EUV light is described with organo tin sulfide (and selenide) clusters. The clusters are solids at room temperature and are soluble in organic solvents that are not too polar. Irradiation can either fragment a carbon metal bond or crosslink unsaturated organic moieties to stabilize the irradiated material. The irradiated material then resists dissolving in organic solvents so that the un-irradiated material can be contacted with an organic solvent to develop the latent image formed with the radiation. Radiation patternable layers can be formed through coating a solution or through vapor deposition. Corresponding precursor solutions, structures and methods are described.
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