- 专利标题： METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
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申请号： US18137288申请日： 2023-04-20
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公开(公告)号： US20240353755A1公开(公告)日： 2024-10-24
- 发明人: Shi-Cheng WANG , Cheng-Han Wu , Ching-Yu Chang , Ya-Ching Chang
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsinchu
- 主分类号： G03F7/11
- IPC分类号： G03F7/11 ; G03F7/004 ; H01L21/027 ; H01L21/033
摘要：
A method includes forming a metallic resist layer over a substrate and patterning the metallic resist layer to form a metallic resist pattern over the substrate. An etch resistant layer composition including an inorganic component, an organic component, or a combination thereof is formed over the metallic resist pattern to form an etch resistant layer.
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