公开(公告)号：US20240038533A1

公开(公告)日：2024-02-01

申请号：US18022213

申请日：2021-08-10

Applicant: Tokyo Electron Limited

Inventor： Hiroki TADATOMO ,  Makoto MURAMATSU ,  Kenichi UEDA ,  Arnaud Alain Jean DAUENDORFFER ,  Tomoya ONITSUKA ,  Keisuke YOSHIDA

IPC: H01L21/027 ,  H01L21/311 ,  H01L21/687 ,  H01L21/67

CPC classification number: H01L21/0274 ,  H01L21/31144 ,  H01L21/68742 ,  H01L21/67098

Abstract: The present disclosure provides a substrate processing method and a substrate processing apparatus which are effective in preventing pattern collapse of an uneven pattern. The substrate processing method according to an exemplary embodiment includes replacing a liquid in a recess of a substrate having an uneven pattern of a negative type resist including a metal formed on a surface of the substrate with a solid-state stiffener, and subjecting the substrate to a molecular weight reduction processing that reduces the number of intermolecular bonds contained in the solid-state stiffener while maintaining the solid-state stiffener in a solid state.

公开(公告)号：US20240249951A1

公开(公告)日：2024-07-25

申请号：US18418757

申请日：2024-01-22

Applicant: Tokyo Electron Limited

Inventor： Kosuke YOSHIHARA ,  Yuichi TERASHITA ,  Yukinobu OTSUKA ,  Shinsuke TAKAKI ,  Hiroki TADATOMO ,  Naoki SHIBATA

IPC: H01L21/308 ,  C23C16/04 ,  C23C16/455 ,  C23C16/46 ,  H01L21/02 ,  H01L21/324

CPC classification number: H01L21/3081 ,  C23C16/042 ,  C23C16/45517 ,  C23C16/46 ,  H01L21/02491 ,  H01L21/3247

Abstract: A substrate treatment method includes: developing a substrate which has a coating film of a metal-containing resist formed thereon and has been subjected to an exposure treatment and a heat treatment after the exposure treatment, the developing including: exposing the substrate to an acid atmosphere being an atmosphere containing gas of a weak acid under a pressure of an atmospheric pressure or higher; and removing a product produced by a reaction between the metal-containing resist and the gas of the weak acid, by heating the substrate.

公开(公告)号：US20240355644A1

公开(公告)日：2024-10-24

申请号：US18640443

申请日：2024-04-19

Applicant: Tokyo Electron Limited

Inventor： Shinsuke TAKAKI ,  Hiroki TADATOMO ,  Yoji SAKATA ,  Tomoya ONITSUKA ,  Naoki SHIBATA

IPC: H01L21/67 ,  G03F7/00 ,  G03F7/004 ,  G03F7/30 ,  G03F7/36 ,  G03F7/38 ,  H01L21/677

CPC classification number: H01L21/67017 ,  G03F7/0042 ,  G03F7/30 ,  G03F7/36 ,  G03F7/38 ,  G03F7/70716 ,  G03F7/7075 ,  G03F7/70866 ,  G03F7/70933 ,  G03F7/70991 ,  H01L21/67225 ,  H01L21/67769 ,  H01L21/67778

Abstract: A substrate processing system provided with a plurality of apparatuses to perform a patterning on a plurality of the substrates, wherein a transfer container accommodating the plurality of substrates is transferred to the plurality of apparatuses in a sequential manner. The substrate processing system includes: a first apparatus of the plurality of apparatuses, which is configured to form a metal-containing resist film on each substrate; a second apparatus of the plurality of apparatuses, which is configured to perform a development on the metal-containing resist film after exposure; and an atmosphere regulator having an accommodation space where the substrates, on each of which the metal-containing resist film before being subjected to the development is formed, are accommodated and configured to regulate an atmosphere of the accommodation space so as to regulate a degree of progress of a reaction of the metal-containing resist film on each substrate.

公开(公告)号：US20240310740A1

公开(公告)日：2024-09-19

申请号：US18599619

申请日：2024-03-08

Applicant: Tokyo Electron Limited

Inventor： Kenichirou MATSUYAMA ,  Hiroki TADATOMO ,  Yoji SAKATA ,  Shinsuke TAKAKI

IPC: G03F7/00 ,  B65G47/90 ,  G03F7/38 ,  H01L21/677

CPC classification number: G03F7/7075 ,  B65G47/90 ,  G03F7/38 ,  G03F7/70533 ,  G03F7/7085 ,  G03F7/70875 ,  G03F7/70991 ,  H01L21/67703

Abstract: A substrate transfer method of transferring a substrate on which a metal-containing resist film is formed from a first placement part to a second placement part, includes transferring, depending on an abnormality in a transfer path, the substrate to a standby chamber in which a second atmosphere different from a first atmosphere of the first placement part is formed, without transferring the substrate to the second placement part, and putting the substrate on standby in the second atmosphere.

公开(公告)号：US20240248417A1

公开(公告)日：2024-07-25

申请号：US18412739

申请日：2024-01-15

Applicant: Tokyo Electron Limited

Inventor： Yoji SAKATA ,  Shingo KATSUKI ,  Ryohei FUJISE ,  Kenichirou MATSUYAMA ,  Shinsuke TAKAKI ,  Hiroyuki IWAKI ,  Hiroki TADATOMO ,  Tomoya ONITSUKA

IPC: G03F7/00

CPC classification number: G03F7/70866 ,  G03F7/70716 ,  G03F7/7075 ,  G03F7/70808

Abstract: A substrate processing apparatus includes a first transfer path that is a transfer path for a substrate after MOR film formation and before exposure, and a second transfer path that is a transfer path for the substrate after exposure; and one or a plurality of nitrogen atmosphere placement stages provided on at least one of the first transfer path and the second transfer path and configured to place the substrate in an environment with a nitrogen concentration of an atmosphere set higher than that of air.