公开(公告)号：US20240170282A1

公开(公告)日：2024-05-23

申请号：US18384448

申请日：2023-10-27

申请人： ASM IP Holding B.V.

发明人： Jerome Samuel Nicolas ,  Fanyong Ran ,  João Ricardo Antunes Afonso ,  Yiting Sun

IPC分类号： H01L21/02 ,  C23C16/455 ,  H01L21/027

CPC分类号： H01L21/02304 ,  C23C16/45544 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0271

摘要： Methods of forming structures including a photoresist underlayer and an adhesion layer and structures including the photoresist underlayer and adhesion layer are disclosed. Exemplary methods include forming the photoresist underlayer and forming an adhesion layer using a cyclical deposition process. The adhesion layer can be formed within the same reaction chamber used to form the photoresist underlayer. Properties of the adhesion layer can be tuned based on a selected photoresist by varying one or more process conditions.

公开(公告)号：US20240361695A1

公开(公告)日：2024-10-31

申请号：US18644370

申请日：2024-04-24

申请人： ASM IP Holding B.V.

发明人： João Ricardo Antunes Afonso ,  Yiting Sun ,  Fanyong Ran ,  Jerome Samuel Nicolas ,  Zecheng Liu

IPC分类号： G03F7/16 ,  G03F7/004 ,  G03F7/075

CPC分类号： G03F7/167 ,  G03F7/0043 ,  G03F7/0751 ,  G03F7/0755

摘要： Methods of forming structures including an adhesion layer and structures including the adhesion layer are disclosed. The adhesion layer may include nitrogen. The method can include forming a metal oxide resist overlying and in contact with the adhesion layer. Exemplary methods further include forming the photoresist underlayer.