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1.发明公开公开(公告)号：US20240353768A1
公开(公告)日：2024-10-24
申请号：US18638890
申请日：2024-04-18
申请人： Carl Zeiss SMT GmbH
CPC分类号： G03F7/70983 , G03F1/84 , G03F7/70033 , G03F7/702 , G03F7/70833 , G03F7/70858
摘要： A measuring device for inspecting photomasks comprises an illumination system, a projection lens and an EUV image sensor. EUV radiation emitted by an EUV radiation source is guided via the illumination system to a photomask. EUV radiation reflected at the photomask is guided via the projection lens to the EUV image sensor such that the photomask is imaged on the EUV image sensor. The measuring device comprises a frame component part, the frame component part carrying a pellicle. The pellicle is arranged between the photomask and the projection lens such that the EUV radiation reflected at the photomask passes through the pellicle. The invention also relates to a method for inspecting photomasks.
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公开(公告)号：US20240345474A1
公开(公告)日：2024-10-17
申请号：US18621633
申请日：2024-03-29
发明人： Takahiro KISHITA , Ryoken OZAWA
CPC分类号： G03F1/84 , G03F7/70033 , G03F7/70683 , G03F9/7088
摘要： The present invention is a method for evaluating a reference mark formed on an EUV mask blank, the method including steps of: imaging the reference mark formed on the EUV mask blank to obtain a reference mark image; obtaining a reference mark contrast from the obtained reference mark image, the reference mark contrast being contrast between the reference mark and a background level; and evaluating processing accuracy of the reference mark with the obtained reference mark contrast. This provides a method for evaluating an EUV mask blank that can easily evaluate processing accuracy (for example, depth) of a reference mark.
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公开(公告)号：US20240241436A1
公开(公告)日：2024-07-18
申请号：US18289384
申请日：2022-05-10
发明人： Xingyue PENG , Rafael C. HOWELL , Yen Wen LU , Xiaorui CHEN
摘要： Methods and systems for determining a mask rule check violation (MRC) associated with a mask feature using a detector having geometric properties corresponding to the MRC. The detector (e.g., elliptical shaped) is configured to include a curved portion to detect a curvature violation, include an enclosed area (e.g., a fully enclosed area or a partially enclosed area having an opening), include a predefined orientation axis configured to guide relative positioning of the detector with a mask feature, and include a length to detect a critical dimension violation. The orientation axis of the detector is aligned with a normal axis at a location on the mask feature. Based on the orientation axis aligned with the normal axis of the mask feature, an MRC violation is determined corresponding to a region of the mask feature that intersects the enclosed area.
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公开(公告)号：US20240168387A1
公开(公告)日：2024-05-23
申请号：US18429281
申请日：2024-01-31
发明人： Tung-Jung CHANG , Jen-Yang CHUNG , Han-Lung CHANG
CPC分类号： G03F7/70608 , G03F1/66 , G03F1/84 , G03F7/70741
摘要： A method and a system for inspecting an extreme ultra violet mask and a mask pod for such masks is provided. An EUV mask inspection tool inspects a mask retrieved from a mask pod placed on the load port positioned exterior of the mask inspection tool. The inspection process is performed during a selected period of time. After the inspection process is initiated, a robotic handling mechanism such as a robotic arm or an AMHS picks up the mask pod and inspects the mask pod for foreign particles. A mask pod inspection tool determines whether the mask pod needs cleaning or replacing based on a selected swap criteria. The mask pod is retrieved from the mask pod inspection tool and placed on the load port before the selected period of time lapses. This method and system promotes a reduction in the overall time required for inspecting the mask and the mask pod.
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公开(公告)号：US20240103384A1
公开(公告)日：2024-03-28
申请号：US18373359
申请日：2023-09-27
申请人： Carl Zeiss SMT GmbH
发明人： Jan Tusch , Kay Dornbusch , Thomas Zeuner
CPC分类号： G03F7/7065 , G03F1/84 , G03F7/70625
摘要： An analysis of the defects of a structured component includes a check of a local deviation between an actual structure dimension of the component and a target structure dimension of the component. In this context, the local deviation is checked at a location of a test path along a deviation coordinate which extends across the test path. The test is repeated at a plurality of different test path locations within a test region of the test path. A summed local deviation between the actual structure dimension and the target structure dimension over the test region is determined. The local deviation is compared with a local deviation tolerance value. The summed local deviation is compared with a summation deviation tolerance value. This results in a defect analysis with enhanced significance, which is implementable using a metrology system in particular.
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公开(公告)号：US20240103360A1
公开(公告)日：2024-03-28
申请号：US18373351
申请日：2023-09-27
申请人： Carl Zeiss SMT GmbH
CPC分类号： G03F1/84 , G03F1/72 , G03F7/70625 , G03F7/70633
摘要： A method for qualifying a mask for a lithography system, the mask having measurement points for detecting critical dimensions of the mask, comprising: first detection of critical dimensions of the mask at the measurement points, the first detection taking place sequentially and the duration of the first detection defining a measurement time period; determining reference measurement points from the measurement points, the number of reference measurement points being less than the number of measurement points; second detection of the at least one critical dimension of the mask at the reference measurement points; determining a deviation between the first and the second detected critical dimension at each of the reference measurement points; and applying a determined temporal profile of the correction factor to the at least one critical dimension to obtain a corrected critical dimension of the mask, and also a corresponding device for qualifying a mask for a lithography system.
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公开(公告)号：US20240103359A1
公开(公告)日：2024-03-28
申请号：US18173287
申请日：2023-02-23
发明人： Xianhui ZHOU , Lei WANG , Zihao ZHANG , Huiming XU
IPC分类号： G03F1/84
CPC分类号： G03F1/84 , G03F7/70741
摘要： A reticle inspection and purging method comprises following steps. A first reticle is moved from a first load port of a lithography tool to a reticle inspection tool located outside the lithography tool. The first reticle is inspected using the reticle inspection tool located outside the lithography tool. Whether the first reticle is acceptable for exposure is determined based on the inspection result. In response the determination determines that the first reticle is not acceptable for exposure, the first reticle is purged.
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8.发明公开公开(公告)号：US20240085777A1
公开(公告)日：2024-03-14
申请号：US18326659
申请日：2023-05-31
发明人： Dae Young PARK , Jeong Hoon KO , Seong Ryeol KIM , Young-Gu KIM , Tae Hoon KIM , Hyun Joong KIM , Young Ju LEE
CPC分类号： G03F1/36 , G03F1/80 , G03F1/84 , G03F7/70625 , G03F7/70683 , G03F7/706841
摘要： Provided is a process proximity effect correction method capable of efficiently improving the dispersion of patterns. There is a process proximity effect correction method according to some embodiments, the process proximity effect correction method of a process proximity effect correction device for performing process proximity effect correction (PPC) of a plurality of patterns using a machine learning module executed by a processor, comprising: training a sensitivity model by inputting a layout image of the plurality of patterns and a layout critical dimension (CD) of the plurality of patterns into the machine learning module; estimating an after cleaning inspection critical dimension (ACI-CD) sensitivity prediction value of the plurality of patterns by inferring an ACI-CD prediction value of the plurality of patterns; and determining a correction rate of the layout CD of the plurality of patterns using the estimated sensitivity prediction value.
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公开(公告)号：US11906897B2
公开(公告)日：2024-02-20
申请号：US17350685
申请日：2021-06-17
发明人： Pei-Cheng Hsu , Yih-Chen Su , Chi-Kuang Tsai , Ta-Cheng Lien , Tzu Yi Wang , Jong-Yuh Chang , Hsin-Chang Lee
CPC分类号： G03F1/24 , G03F1/26 , G03F1/80 , G03F1/84 , G03F7/70433 , G03F7/70466 , H01L21/2633
摘要： A reflective mask includes a reflective multilayer over a substrate, a capping layer over the reflective multilayer, an absorber layer over the capping layer and including a top surface, and a protection layer directly on the top surface of the absorber layer. The absorber layer is formed of a first material and the protection layer is formed of a second material that is less easily to be oxidized than the first material.
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公开(公告)号：US11886126B2
公开(公告)日：2024-01-30
申请号：US17369900
申请日：2021-07-07
申请人： Carl Zeiss SMT GmbH
发明人： Klaus Edinger , Christian Felix Hermanns , Tilo Sielaff , Jens Oster , Christof Baur , Maksym Kompaniiets
CPC分类号： G03F7/70925 , G03F1/84 , G03F7/70033 , G03F7/7085 , G06N3/08
摘要： The present application relates to an apparatus and to a method for removing at least a single particulate from a substrate, especially an optical element for extreme ultraviolet (EUV) photolithography, wherein the apparatus comprises: (a) an analysis unit designed to determine at least one constituent of a material composition of the at least one single particulate; and (b) at least one gas injection system designed to provide a gas matched to the particular constituent in an environment of the at least one single particulate; (c) wherein the matched gas contributes to removing the at least one single particulate from the substrate.
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