公开(公告)号：US20240353749A1

公开(公告)日：2024-10-24

申请号：US18713143

申请日：2022-11-23

Applicant: ASML NETHERLANDS B.V.

Inventor： Xingyue PENG ,  Ningning JIA ,  Zhan SHI ,  Rafael C. HOWELL

IPC: G03F1/36

CPC classification number: G03F1/36

Abstract: Methods, software, and systems are disclosed for determining mask patterns. The determination can include obtaining a mask pattern including sub-resolution assist features (SRAFs) each having constant widths. The widths are set as continuous variables and so can be optimized along with other variables during a mask optimization process of the mask pattern. Based on their population and/or statistics, the optimized continuous widths are then discretized to a limited number of global width levels. Further mask optimization be performed with the SRAFs having discretized optimized global width levels, where the width assigned to an individual SRAF may be adjusted to a different level of the global width levels.

公开(公告)号：US20220334493A1

公开(公告)日：2022-10-20

申请号：US17638899

申请日：2020-08-21

Applicant: ASML NETHERLANDS B.V.

Inventor： Jingjing LIU ,  Duan-Fu Stephen HSU ,  Xingyue PENG

IPC: G03F7/20 ,  G05B19/4099

Abstract: A method for determining process window limiting patterns based on aberration sensitivity associated with a patterning apparatus. The method includes obtaining (i) a first set of kernels and a second set of kernels associated with an aberration wavefront of the patterning apparatus and (ii) a design layout to be printed on a substrate via the patterning apparatus; and determining, via a process simulation using the design layout, the first set of kernels, and the second set of kernels, an aberration sensitivity map associated with the aberration wavefront, the aberration sensitivity map indicating how sensitive one or more portions of the design layout are to an individual aberrations and an interaction between different aberrations; determining, based on the aberration sensitivity map, the process window limiting pattern associated with the design layout having relatively high sensitivity compared to other portions of the design layout.

公开(公告)号：US20240419086A1

公开(公告)日：2024-12-19

申请号：US18819516

申请日：2024-08-29

Applicant: ASML NETHERLANDS B.V.

Inventor： Xingyue PENG ,  Duan-Fu Stephen Hsu ,  Rafael C. Howell ,  Qinglin Li

IPC: G03F7/00

Abstract: Methods for optimizing an aspect of a patterning process based on defects. For example, a method of source and mask optimization of a patterning process includes obtaining a location on a substrate having a threshold probability of having a defect; defining an defect ambit around the location to include a portion of a pattern on the substrate and one or more evaluation points associated with the portion of the pattern; determining a value of a first cost function based on a defect metric associated with the defect; determining a first guide function for the first cost function, wherein the first guide function is associated with a performance metric of the patterning process at the one or more evaluation locations within the defect ambit; and adjusting a source and/or a mask characteristic based on the value of the first cost function, and the first guide function.

公开(公告)号：US20210116816A1

公开(公告)日：2021-04-22

申请号：US17047441

申请日：2019-04-16

Applicant: ASML NETHERLANDS B.V.

Inventor： Xingyue PENG ,  Jingjing LIU

IPC: G03F7/20 ,  G06F17/14

Abstract: A method for determining electromagnetic fields associated with a mask model of a patterning process. The method includes obtaining a mask stack region of interest and an interaction order corresponding to the mask stack region of interest. The mask stack region of interest is divided into sub regions. The mask stack region of interest has one or more characteristics associated with propagation of electromagnetic waves through the mask stack region of interest. The method includes generating one or more electromagnetic field determination expressions based on the Maxwell Equations and the Quantum Schrodinger Equation. The method includes determining an electromagnetic field associated with the mask stack region of interest based on the sub regions of the mask stack region of interest and the characteristics associated with the propagation of electromagnetic waves through the mask stack region of interest, using the one or more electromagnetic field determination expressions.

公开(公告)号：US20230333483A1

公开(公告)日：2023-10-19

申请号：US18027093

申请日：2021-09-24

Applicant: ASML NETHERLANDS B.V.

Inventor： Xingyue PENG ,  Duan-Fu Stephen HSU

IPC: G03F7/20

CPC classification number: G03F7/70558 ,  G03F7/705 ,  G03F7/70125

Abstract: A method for source mask optimization to increase scanner throughput for a patterning process is described. The method includes computing a multi-variable cost function of design variables that are representative of characteristics of the patterning process. The design variables may include (a) an illumination variable that is characteristic of an illumination system, and (b) a design layout variable that is characteristic of a design layout. The multi-variable cost function may be a function of a throughput of the patterning process. The method further includes reconfiguring the characteristics of the patterning process by adjusting the design variables until a predefined termination condition is satisfied.

公开(公告)号：US20220229374A1

公开(公告)日：2022-07-21

申请号：US17605358

申请日：2020-03-26

Applicant: ASML NETHERLANDS B.V.

Inventor： Xingyue PENG ,  Duan-Fu Stephen HSU ,  Rafael C. HOWELL ,  Qinglin LI

IPC: G03F7/20

Abstract: Methods for optimizing an aspect of a patterning process based on defects. For example, a method of source and mask optimization of a patterning process includes obtaining a location on a substrate having a threshold probability of having a defect; defining an defect ambit around the location to include a portion of a pattern on the substrate and one or more evaluation points associated with the portion of the pattern; determining a value of a first cost function based on a defect metric associated with the defect; determining a first guide function for the first cost function, wherein the first guide function is associated with a performance metric of the patterning process at the one or more evaluation locations within the defect ambit; and adjusting a source and/or a mask characteristic based on the value of the first cost function, and the first guide function.

公开(公告)号：US20230205096A1

公开(公告)日：2023-06-29

申请号：US17927866

申请日：2021-05-14

Applicant: ASML NETHERLANDS B.V.

Inventor： Xingyue PENG ,  Zhan SHI ,  Duan-Fu Stephen HSU ,  Rafael C. HOWELL ,  Gerui LIU

IPC: G03F7/20

CPC classification number: G03F7/705 ,  G03F7/706 ,  G03F7/70525

Abstract: Scanner aberration impact modeling in a semiconductor manufacturing process, which may facilitate co-optimization of multiple scanners. Scanner aberration impact modeling may include executing a calibrated model and controlling a scanner based on output from the model. The model is configured to receive patterning system aberration data. The model is calibrated with patterning system aberration calibration data and corresponding patterning process impact calibration data. New patterning process impact data may be determined, based on the model, for the received patterning system aberration data. The model includes a hyperdimensional function configured to correlate the received patterning system aberration data with the new patterning process impact data. The hyperdimensional function is configured to correlate the received patterning system aberration data with the new patterning process impact data in an approximation form, in lieu of a full simulation, without involving calculation of an aerial image or a representation thereof.

公开(公告)号：US20250138433A1

公开(公告)日：2025-05-01

申请号：US19009546

申请日：2025-01-03

Applicant: ASML NETHERLANDS B.V.

Inventor： Xingyue PENG ,  Zhan SHI ,  Duan-Fu Stephen HSU ,  Rafael C. HOWELL ,  Gerui LIU

IPC: G03F7/00

Abstract: Scanner aberration impact modeling in a semiconductor manufacturing process, which may facilitate co-optimization of multiple scanners. Scanner aberration impact modeling may include executing a calibrated model and controlling a scanner based on output from the model. The model is configured to receive patterning system aberration data. The model is calibrated with patterning system aberration calibration data and corresponding patterning process impact calibration data. New patterning process impact data may be determined, based on the model, for the received patterning system aberration data. The model includes a hyperdimensional function configured to correlate the received patterning system aberration data with the new patterning process impact data. The hyperdimensional function is configured to correlate the received patterning system aberration data with the new patterning process impact data in an approximation form, in lieu of a full simulation, without involving calculation of an aerial image or a representation thereof.

公开(公告)号：US20240241436A1

公开(公告)日：2024-07-18

申请号：US18289384

申请日：2022-05-10

Applicant: ASML NETHERLANDS B.V.

Inventor： Xingyue PENG ,  Rafael C. HOWELL ,  Yen Wen LU ,  Xiaorui CHEN

IPC: G03F1/84 ,  G03F1/36 ,  G06F30/20

CPC classification number: G03F1/84 ,  G06F30/20 ,  G03F1/36

Abstract: Methods and systems for determining a mask rule check violation (MRC) associated with a mask feature using a detector having geometric properties corresponding to the MRC. The detector (e.g., elliptical shaped) is configured to include a curved portion to detect a curvature violation, include an enclosed area (e.g., a fully enclosed area or a partially enclosed area having an opening), include a predefined orientation axis configured to guide relative positioning of the detector with a mask feature, and include a length to detect a critical dimension violation. The orientation axis of the detector is aligned with a normal axis at a location on the mask feature. Based on the orientation axis aligned with the normal axis of the mask feature, an MRC violation is determined corresponding to a region of the mask feature that intersects the enclosed area.