公开(公告)号：US20220004094A1

公开(公告)日：2022-01-06

申请号：US17477765

申请日：2021-09-17

Applicant: ASML NETHERLANDS B.V.

Inventor： Duan-Fu Stephen HSU ,  Jingjing LIU

IPC: G03F1/36

Abstract: A patterning device, includes: an absorber layer on a patterning device substrate; and a reflective or transmissive layer on the patterning device substrate, wherein the absorber layer and the reflective or transmissive layer together define a pattern layout having a main feature and an attenuated sub-resolution assist feature paired with the main feature, wherein: the main feature is configured to generate, upon transferring the device pattern to a layer of patterning material on a substrate, the main feature in the layer of patterning material, and upon the transferring the pattern to the layer of patterning material, the attenuated sub-resolution assist feature is configured to avoid generating a feature in the layer of patterning material and to produce a different radiation intensity than the main feature.

公开(公告)号：US20210116816A1

公开(公告)日：2021-04-22

申请号：US17047441

申请日：2019-04-16

Applicant: ASML NETHERLANDS B.V.

Inventor： Xingyue PENG ,  Jingjing LIU

IPC: G03F7/20 ,  G06F17/14

Abstract: A method for determining electromagnetic fields associated with a mask model of a patterning process. The method includes obtaining a mask stack region of interest and an interaction order corresponding to the mask stack region of interest. The mask stack region of interest is divided into sub regions. The mask stack region of interest has one or more characteristics associated with propagation of electromagnetic waves through the mask stack region of interest. The method includes generating one or more electromagnetic field determination expressions based on the Maxwell Equations and the Quantum Schrodinger Equation. The method includes determining an electromagnetic field associated with the mask stack region of interest based on the sub regions of the mask stack region of interest and the characteristics associated with the propagation of electromagnetic waves through the mask stack region of interest, using the one or more electromagnetic field determination expressions.

公开(公告)号：US20220334493A1

公开(公告)日：2022-10-20

申请号：US17638899

申请日：2020-08-21

Applicant: ASML NETHERLANDS B.V.

Inventor： Jingjing LIU ,  Duan-Fu Stephen HSU ,  Xingyue PENG

IPC: G03F7/20 ,  G05B19/4099

Abstract: A method for determining process window limiting patterns based on aberration sensitivity associated with a patterning apparatus. The method includes obtaining (i) a first set of kernels and a second set of kernels associated with an aberration wavefront of the patterning apparatus and (ii) a design layout to be printed on a substrate via the patterning apparatus; and determining, via a process simulation using the design layout, the first set of kernels, and the second set of kernels, an aberration sensitivity map associated with the aberration wavefront, the aberration sensitivity map indicating how sensitive one or more portions of the design layout are to an individual aberrations and an interaction between different aberrations; determining, based on the aberration sensitivity map, the process window limiting pattern associated with the design layout having relatively high sensitivity compared to other portions of the design layout.

公开(公告)号：US20230141799A1

公开(公告)日：2023-05-11

申请号：US18089848

申请日：2022-12-28

Applicant: ASML NETHERLANDS B.V.

Inventor： Roshni BISWAS ,  Rafael C. HOWELL ,  Cuiping ZHANG ,  Ningning JIA ,  Jingjing LIU ,  Quan ZHANG

IPC: G06F30/398 ,  G06F30/392 ,  G03F7/20

CPC classification number: G06F30/398 ,  G06F30/392 ,  G03F7/70441 ,  G03F7/705 ,  G03F7/70625 ,  G06F2119/18

Abstract: A method for determining a patterning device pattern. The method includes obtaining (i) an initial patterning device pattern having at least one feature, and (ii) a desired feature size of the at least one feature, obtaining, based on a patterning process model, the initial patterning device pattern and a target pattern for a substrate, a difference value between a predicted pattern of the substrate image by the initial patterning device and the target pattern for the substrate, determining a penalty value related the manufacturability of the at least one feature, wherein the penalty value varies as a function of the size of the at least one feature, and determining the patterning device pattern based on the initial patterning device pattern and the desired feature size such that a sum of the difference value and the penalty value is reduced.

公开(公告)号：US20200041891A1

公开(公告)日：2020-02-06

申请号：US16485181

申请日：2018-02-20

Applicant: ASML NETHERLANDS B.V.

Inventor： Duan-Fu Stephen HSU ,  Jingjing LIU

IPC: G03F1/24 ,  G03F7/20 ,  G03F1/36 ,  G03F1/38

Abstract: A patterning device, includes: an absorber layer on a patterning device substrate; and a reflective or transmissive layer on the patterning device substrate, wherein the absorber layer and the reflective or transmissive layer together define a pattern layout having a main feature and an attenuated sub-resolution assist feature paired with the main feature, wherein: the main feature is configured to generate, upon transferring the device pattern to a layer of patterning material on a substrate, the main feature in the layer of patterning material, and upon the transferring the pattern to the layer of patterning material, the attenuated sub-resolution assist feature is configured to avoid generating a feature in the layer of patterning material and to produce a different radiation intensity than the main feature.