-
公开(公告)号：US12044959B2
公开(公告)日：2024-07-23
申请号：US18114848
申请日：2023-02-27
发明人： Hung-Yi Tsai , Wei-Che Hsieh , Ta-Cheng Lien , Hsin-Chang Lee , Ping-Hsun Lin , Hao-Ping Cheng , Ming-Wei Chen , Szu-Ping Tsai
IPC分类号： G03F1/24
CPC分类号： G03F1/24
摘要： A reflective mask includes a substrate, a reflective multilayer disposed on the substrate, a capping layer disposed on the reflective multilayer, and an absorber layer disposed on the capping layer. The absorber layer includes a base material made of one or more of a Cr based material, an Ir based material, a Pt based material, or Co based material, and further contains one or more additional elements selected from the group consisting of Si, B, Ge, Al, As, Sb, Te, Se and Bi.
-
2.发明公开公开(公告)号：US20230280645A1
公开(公告)日：2023-09-07
申请号：US18317368
申请日：2023-05-15
发明人： Pei-Cheng Hsu , Chun-Fu Yang , Ta-Cheng Lien , Hsin-Chang Lee
CPC分类号： G03F1/24 , G03F1/70 , G03F7/2004
摘要： The present disclosure describes a method of patterning a semiconductor wafer using extreme ultraviolet lithography (EUVL). The method includes receiving an EUVL mask that includes a substrate having a low temperature expansion material, a reflective multilayer over the substrate, a capping layer over the reflective multilayer, and an absorber layer over the capping layer. The method further includes patterning the absorber layer to form a trench on the EUVL mask, wherein the trench has a first width above a target width. The method further includes treating the EUVL mask with oxygen plasma to reduce the trench to a second width, wherein the second width is below the target width. The method may also include treating the EUVL mask with nitrogen plasma to protect the capping layer, wherein the treating of the EUVL mask with the nitrogen plasma expands the trench to a third width at the target width.
-
公开(公告)号：US11506969B2
公开(公告)日：2022-11-22
申请号：US17109833
申请日：2020-12-02
发明人： Pei-Cheng Hsu , Ta-Cheng Lien , Hsin-Chang Lee
IPC分类号： G03F1/24
摘要： A reflective mask includes a substrate, a reflective multilayer disposed over the substrate, a capping layer disposed over the reflective multilayer, an intermediate layer disposed over the capping layer, an absorber layer disposed over the intermediate layer, and a cover layer disposed over the absorber layer. The intermediate layer includes a material having a lower hydrogen diffusivity than a material of the capping layer.
-
公开(公告)号：US11294292B2
公开(公告)日：2022-04-05
申请号：US17085206
申请日：2020-10-30
发明人： Chen-Yang Lin , Da-Wei Yu , Li-Hsin Wang , Kuan-Wen Lin , Chia-Jen Chen , Hsin-Chang Lee
摘要： An photolithographic apparatus includes a particle removing cassette selectively extendable from the processing apparatus. The particle removing cassette includes a wind blade slit and an exhausting slit. The wind blade slit is configured to direct pressurized cleaning material to a surface of the mask to remove the debris particles from the surface of the mask. The exhausting slit collects the debris particles separated from the surface of the mask and contaminants through the exhaust line. In some embodiments, the wind blade slit includes an array of wind blade nozzles spaced apart within the wind blade slit. In some embodiments, the exhausting slit includes array of exhaust lines spaced apart within the exhausting slit.
-
公开(公告)号：US11237477B2
公开(公告)日：2022-02-01
申请号：US16012253
申请日：2018-06-19
发明人： Pei-Cheng Hsu , Ta-Cheng Lien , Tzu Yi Wang , Hsin-Chang Lee
IPC分类号： G03F1/66 , G03F7/20 , H01L21/673
摘要： A mask container for storing a mask for photolithography, includes a cover and a base having a plurality of tapered corners. The tapered corners taper outward and downward from a top major surface of the base. The cover having the tapered corners extends downward that covers the tapered corners of the base when the cover is attached to the base. The tapered corners of the cover are tapered at about the same angle as the tapered corners of the base so that a surface of the tapered corners of the cover is substantially parallel to a corresponding surface of the tapered corner of the base when the cover is attached to the base. A recess is located in the tapered corners of the cover. A biasing member and a ball-shaped member are located in the tapered corners of the base to mate with the recess when the cover is attached to the base.
-
公开(公告)号：US11137684B2
公开(公告)日：2021-10-05
申请号：US16719118
申请日：2019-12-18
发明人： Yun-Yue Lin , Hsin-Chang Lee , Chia-Jen Chen , Chih-Cheng Lin , Anthony Yen , Chin-Hsiang Lin
摘要： A method of performing a lithography process includes receiving a lithography mask and performing overlay measurement. The lithography mask includes a substrate that contains a low thermal expansion material (LTEM); a reflective structure over a first side of the substrate; an absorber layer over the reflective structure and containing one or more first overlay marks; and a conductive layer over a second side of the substrate and containing one or more second overlay marks. The second side is opposite the first side. The overlay measurement includes using the one or more first overlay marks in an extreme ultraviolet (EUV) lithography process or using the one or more second overlay marks in a non-EUV lithography process.
-
公开(公告)号：US11106126B2
公开(公告)日：2021-08-31
申请号：US16383535
申请日：2019-04-12
发明人： Hsin-Chang Lee , Pei-Cheng Hsu , Ta-Cheng Lien , Tzu Yi Wang
摘要： In a method of manufacturing a photo mask, an etching mask layer having circuit patterns is formed over a target layer of the photo mask to be etched. The photo mask includes a backside conductive layer. The target layer is etched by plasma etching, while preventing active species of plasma from attacking the backside conductive layer.
-
8.发明授权公开(公告)号：US11086215B2
公开(公告)日：2021-08-10
申请号：US16019754
申请日：2018-06-27
发明人： Yun-Yue Lin , Hsin-Chang Lee
摘要： A reticle and a method for manufacturing a reticle are provided. The method includes forming a reflective multilayer (ML) over a front-side surface of a mask substrate. The method further includes forming a capping layer over the reflective ML. The method further includes forming a sacrificial multilayer over the capping layer. The method further includes forming an opening in the sacrificial multilayer to expose the capping layer. The method further includes forming a first absorption layer over the sacrificial multilayer and covering the capping layer in the opening. The method further includes removing the first absorption layer outside the opening in the sacrificial multilayer to form a first absorption pattern on a portion of the capping layer.
-
公开(公告)号：US11048158B2
公开(公告)日：2021-06-29
申请号：US15956189
申请日：2018-04-18
发明人： Pei-Cheng Hsu , Yih-Chen Su , Chi-Kuang Tsai , Ta-Cheng Lien , Tzu Yi Wang , Jong-Yuh Chang , Hsin-Chang Lee
摘要： A method comprises receiving a workpiece that includes a substrate having a low temperature expansion material, a reflective multilayer over the substrate, a capping layer over the reflective multilayer, and an absorber layer over the capping layer. The method further comprises patterning the absorber layer to provide first trenches corresponding to circuit patterns on a wafer, and patterning the absorber layer, the capping layer, and the reflective multilayer to provide second trenches corresponding to a die boundary area on the wafer, thereby providing an extreme ultraviolet lithography (EUVL) mask. The method further comprises treating the EUVL mask with a treatment chemical that prevents exposed surfaces of the absorber layer from oxidation.
-
10.发明授权公开(公告)号：US10996553B2
公开(公告)日：2021-05-04
申请号：US16128863
申请日：2018-09-12
发明人： Wen-Chang Hsueh , Huan-Ling Lee , Chia-Jen Chen , Hsin-Chang Lee
摘要： A reticle and a method for manufacturing the same are provided. The reticle includes a mask substrate, a reflective multilayer (ML), a capping layer and an absorption composite structure. The reflective ML is positioned over a front-side surface of the mask substrate. The capping layer is positioned over the reflective ML. The absorption composite structure is positioned over the capping layer. The absorption composite structure includes a first absorption layer, a second absorption layer, a third absorption layer and an etch stop layer. The first absorption layer is positioned over the capping layer. The second absorption layer is positioned over the first absorption layer. The third absorption layer is positioned over the second absorption layer. The etch stop layer is positioned between the first absorption layer and the second absorption layer. The first absorption layer and the second absorption layer are made of the same material.
-
-
-
-
-
-
-
-
-
搜索结果
75 条记录 (耗时 0.025 秒)
