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1.发明公开公开(公告)号：US20230280645A1
公开(公告)日：2023-09-07
申请号：US18317368
申请日：2023-05-15
发明人： Pei-Cheng Hsu , Chun-Fu Yang , Ta-Cheng Lien , Hsin-Chang Lee
CPC分类号： G03F1/24 , G03F1/70 , G03F7/2004
摘要： The present disclosure describes a method of patterning a semiconductor wafer using extreme ultraviolet lithography (EUVL). The method includes receiving an EUVL mask that includes a substrate having a low temperature expansion material, a reflective multilayer over the substrate, a capping layer over the reflective multilayer, and an absorber layer over the capping layer. The method further includes patterning the absorber layer to form a trench on the EUVL mask, wherein the trench has a first width above a target width. The method further includes treating the EUVL mask with oxygen plasma to reduce the trench to a second width, wherein the second width is below the target width. The method may also include treating the EUVL mask with nitrogen plasma to protect the capping layer, wherein the treating of the EUVL mask with the nitrogen plasma expands the trench to a third width at the target width.
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公开(公告)号：US11506969B2
公开(公告)日：2022-11-22
申请号：US17109833
申请日：2020-12-02
发明人： Pei-Cheng Hsu , Ta-Cheng Lien , Hsin-Chang Lee
IPC分类号： G03F1/24
摘要： A reflective mask includes a substrate, a reflective multilayer disposed over the substrate, a capping layer disposed over the reflective multilayer, an intermediate layer disposed over the capping layer, an absorber layer disposed over the intermediate layer, and a cover layer disposed over the absorber layer. The intermediate layer includes a material having a lower hydrogen diffusivity than a material of the capping layer.
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公开(公告)号：US11237477B2
公开(公告)日：2022-02-01
申请号：US16012253
申请日：2018-06-19
发明人： Pei-Cheng Hsu , Ta-Cheng Lien , Tzu Yi Wang , Hsin-Chang Lee
IPC分类号： G03F1/66 , G03F7/20 , H01L21/673
摘要： A mask container for storing a mask for photolithography, includes a cover and a base having a plurality of tapered corners. The tapered corners taper outward and downward from a top major surface of the base. The cover having the tapered corners extends downward that covers the tapered corners of the base when the cover is attached to the base. The tapered corners of the cover are tapered at about the same angle as the tapered corners of the base so that a surface of the tapered corners of the cover is substantially parallel to a corresponding surface of the tapered corner of the base when the cover is attached to the base. A recess is located in the tapered corners of the cover. A biasing member and a ball-shaped member are located in the tapered corners of the base to mate with the recess when the cover is attached to the base.
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公开(公告)号：US11106126B2
公开(公告)日：2021-08-31
申请号：US16383535
申请日：2019-04-12
发明人： Hsin-Chang Lee , Pei-Cheng Hsu , Ta-Cheng Lien , Tzu Yi Wang
摘要： In a method of manufacturing a photo mask, an etching mask layer having circuit patterns is formed over a target layer of the photo mask to be etched. The photo mask includes a backside conductive layer. The target layer is etched by plasma etching, while preventing active species of plasma from attacking the backside conductive layer.
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公开(公告)号：US11048158B2
公开(公告)日：2021-06-29
申请号：US15956189
申请日：2018-04-18
发明人： Pei-Cheng Hsu , Yih-Chen Su , Chi-Kuang Tsai , Ta-Cheng Lien , Tzu Yi Wang , Jong-Yuh Chang , Hsin-Chang Lee
摘要： A method comprises receiving a workpiece that includes a substrate having a low temperature expansion material, a reflective multilayer over the substrate, a capping layer over the reflective multilayer, and an absorber layer over the capping layer. The method further comprises patterning the absorber layer to provide first trenches corresponding to circuit patterns on a wafer, and patterning the absorber layer, the capping layer, and the reflective multilayer to provide second trenches corresponding to a die boundary area on the wafer, thereby providing an extreme ultraviolet lithography (EUVL) mask. The method further comprises treating the EUVL mask with a treatment chemical that prevents exposed surfaces of the absorber layer from oxidation.
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公开(公告)号：US10353285B2
公开(公告)日：2019-07-16
申请号：US16010118
申请日：2018-06-15
发明人： Hsin-Chang Lee , Pei-Cheng Hsu , Yun-Yue Lin , Hsuan-Chen Chen , Hsuan-I Wang , Anthony Yen
摘要： A structure including an EUV mask and a pellicle attached to the EUV mask. The pellicle includes a pellicle frame and a plurality of pellicle membrane layers attached to the pellicle frame. The plurality of pellicle membrane layers include at least one core pellicle membrane layer and an additional pellicle membrane layer is disposed on the at least one core pellicle membrane layer. In some embodiments, the additional pellicle membrane layer is a material having a thermal emissivity greater than 0.2, a transmittance greater than 80%, and a refractive index (n) for 13.5 nanometer source of greater than 0.9.
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公开(公告)号：US11815804B2
公开(公告)日：2023-11-14
申请号：US17481673
申请日：2021-09-22
发明人： Ping-Hsun Lin , Pei-Cheng Hsu , Ching-Fang Yu , Ta-Cheng Lien , Chia-Jen Chen , Hsin-Chang Lee
IPC分类号： G03F1/24
CPC分类号： G03F1/24
摘要： An extreme ultraviolet mask including a substrate, a reflective multilayer stack on the substrate and a capping layer on the reflective multilayer stack is provided. The reflective multilayer stack is treated prior to formation of the capping layer on the reflective multilayer stack. The capping layer is formed by an ion-assisted ion beam deposition or an ion-assisted sputtering process.
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公开(公告)号：US11249384B2
公开(公告)日：2022-02-15
申请号：US16441700
申请日：2019-06-14
发明人： Pei-Cheng Hsu , Chi-Ping Wen , Tzu Yi Wang , Ta-Cheng Lien , Hsin-Chang Lee
IPC分类号： G03F1/22
摘要： A method of manufacturing an extreme ultraviolet (EUV) lithography mask includes forming an image pattern in an absorption layer of EUV mask blank. The EUV mask blank includes: a multilayer stack including alternating molybdenum (Mo) and silicon (Si) layers disposed over a first surface of a mask substrate, a capping layer disposed over the multilayer stack, and an absorption layer disposed over the capping layer. A border region surrounds the image pattern having a trench wherein the absorption layer, the capping layer and at least a portion of the multilayer stack are etched. Concave sidewalls are formed in the border region or an inter-diffused portion is formed in the multilayer stack of the trench.
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公开(公告)号：US11221554B2
公开(公告)日：2022-01-11
申请号：US16746640
申请日：2020-01-17
发明人： Pei-Cheng Hsu , Ta-Cheng Lien , Hsin-Chang Lee
摘要： An extreme ultra-violet (EUV) mask and method for fabricating the same is disclosed. For example, the EUV mask includes a substrate, a multi-layered mirror layer formed on the substrate, a metal capping layer formed on the multi-layered mirror layer, and a multi-layered absorber layer formed on the metal capping layer. The multi-layered absorber layer includes features etched into the multi-layered absorber layer to define structures on a semiconductor device.
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公开(公告)号：US20210311383A1
公开(公告)日：2021-10-07
申请号：US17350685
申请日：2021-06-17
发明人： Pei-Cheng Hsu , Yih-Chen Su , Chi-Kuang Tsai , Ta-Cheng Lien , Tzu Yi Wang , Jong-Yuh Chang , Hsin-Chang Lee
摘要： A reflective mask includes a reflective multilayer over a substrate, a capping layer over the reflective multilayer, an absorber layer over the capping layer and including a top surface, and a protection layer directly on the top surface of the absorber layer. The absorber layer is formed of a first material and the protection layer is formed of a second material that is less easily to be oxidized than the first material.
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