SEMICONDUCTOR DEVICE
    3.
    发明申请

    公开(公告)号:US20230022373A1

    公开(公告)日:2023-01-26

    申请号:US17657202

    申请日:2022-03-30

    IPC分类号: H01L27/108

    摘要: A semiconductor device is provided. The semiconductor device includes a substrate which includes a cell region and a core region, a boundary element separation film which is placed inside the substrate, and separates the cell region and the core region, and a bit line which is placed on the cell region and the boundary element separation film and extends along a first direction, in which the boundary element separation film includes a first region and a second region, a height of an upper side of the first region of the boundary element separation film is different from a height of an upper side of the second region of the boundary element separation film, on a basis of a bottom side of the boundary element separation film, and the bit line is placed over the first region and the second region of the boundary element separation film.

    IMAGE SENSOR AND AN IMAGE SENSING SYSTEM INCLUDING THE SAME

    公开(公告)号:US20220149091A1

    公开(公告)日:2022-05-12

    申请号:US17491905

    申请日:2021-10-01

    IPC分类号: H01L27/146 H04N9/04 H04N5/369

    摘要: Provided is an image sensor including a substrate, an element separation film provided on the substrate and having a mesh shape, a plurality of pixel regions formed by the element separation film, the plurality of pixel regions including a first pixel region and a second pixel region that is adjacent to the first pixel region, the element separation film being interposed between the first pixel region and the second pixel region, a first lens provided to extend along the first pixel region and the second pixel region, a first color filter configured to transmit light focused by the first lens to the first pixel region and the second pixel region, and a color filter grid forming a region in which the first color filter is provided, and at least partially overlapping the first pixel region and the second pixel region in a vertical direction.

    SEMICONDUCTOR DEVICE
    6.
    发明公开

    公开(公告)号:US20240334678A1

    公开(公告)日:2024-10-03

    申请号:US18735313

    申请日:2024-06-06

    IPC分类号: H10B12/00

    CPC分类号: H10B12/315 H10B12/34

    摘要: A semiconductor device is provided. The semiconductor device includes a substrate which includes a cell region and a core region, a boundary element separation film which is placed inside the substrate, and separates the cell region and the core region, and a bit line which is placed on the cell region and the boundary element separation film and extends along a first direction, in which the boundary element separation film includes a first region and a second region, a height of an upper side of the first region of the boundary element separation film is different from a height of an upper side of the second region of the boundary element separation film, on a basis of a bottom side of the boundary element separation film, and the bit line is placed over the first region and the second region of the boundary element separation film.