- 专利标题: Method for extreme ultraviolet lithography mask treatment
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申请号: US17350685申请日: 2021-06-17
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公开(公告)号: US11906897B2公开(公告)日: 2024-02-20
- 发明人: Pei-Cheng Hsu , Yih-Chen Su , Chi-Kuang Tsai , Ta-Cheng Lien , Tzu Yi Wang , Jong-Yuh Chang , Hsin-Chang Lee
- 申请人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址: TW Hsinchu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人地址: TW Hsinchu
- 代理机构: HAYNES AND BOONE, LLP
- 主分类号: G03F1/24
- IPC分类号: G03F1/24 ; G03F1/26 ; G03F7/00 ; H01L21/263 ; G03F1/80 ; G03F1/84
摘要:
A reflective mask includes a reflective multilayer over a substrate, a capping layer over the reflective multilayer, an absorber layer over the capping layer and including a top surface, and a protection layer directly on the top surface of the absorber layer. The absorber layer is formed of a first material and the protection layer is formed of a second material that is less easily to be oxidized than the first material.
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