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公开(公告)号：US20240345474A1
公开(公告)日：2024-10-17
申请号：US18621633
申请日：2024-03-29
发明人： Takahiro KISHITA , Ryoken OZAWA
CPC分类号： G03F1/84 , G03F7/70033 , G03F7/70683 , G03F9/7088
摘要： The present invention is a method for evaluating a reference mark formed on an EUV mask blank, the method including steps of: imaging the reference mark formed on the EUV mask blank to obtain a reference mark image; obtaining a reference mark contrast from the obtained reference mark image, the reference mark contrast being contrast between the reference mark and a background level; and evaluating processing accuracy of the reference mark with the obtained reference mark contrast. This provides a method for evaluating an EUV mask blank that can easily evaluate processing accuracy (for example, depth) of a reference mark.
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2.发明申请EVALUATION METHOD OF DEFECT SIZE OF PHOTOMASK BLANK, SELECTION METHOD, AND MANUFACTURING METHOD 有权光电薄膜缺陷尺寸的评估方法，选择方法和制造方法公开(公告)号：US20160116837A1
公开(公告)日：2016-04-28
申请号：US14921076
申请日：2015-10-23
CPC分类号： G03F1/84 , G01N21/8851 , G01N21/956 , G01N2021/8874 , G01N2021/9511 , G01N2021/95676 , G03F1/50
摘要： The defect size of a photomask blank is evaluated. An inspection-target photomask blank is irradiated with inspection light and reflected light of the region of the inspection-target photomask blank irradiated with the inspection light is collected through an objective lens of an inspection optical system as a magnified image of the region. Then, an intensity change part in the light intensity distribution profile of the magnified image is identified. Next, a difference in the light intensity of the intensity change part is obtained and the width of the intensity change part is obtained as the apparent width of the defect. Then, the width of the defect is calculated on the basis of a predetermined conversion expression showing the relationship among the difference in the light intensity, the apparent width of the defect, and the actual width of the defect, and the width of the defect is estimated.
摘要翻译： 评估光掩模坯料的缺陷尺寸。 用检查光照射检查对象的光掩模坯料，通过作为该区域的放大图像的检查光学系统的物镜来收集被检查用光照射的检查对象光掩模坯料的区域的反射光。 然后，识别放大图像的光强度分布曲线中的强度变化部分。 接下来，获得强度变化部分的光强度的差异，并且获得强度变化部分的宽度作为缺陷的视在宽度。 然后，基于表示光强差异，缺陷的表观宽度与缺陷的实际宽度之间的关系的预定转换表达式计算缺陷的宽度，并且缺陷的宽度为 估计。
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3.发明申请DEFECT INSPECTING METHOD, SORTING METHOD AND PRODUCING METHOD FOR PHOTOMASK BLANK 有权缺陷检查方法，分光方法及其制作方法公开(公告)号：US20170068158A1
公开(公告)日：2017-03-09
申请号：US15256111
申请日：2016-09-02
IPC分类号： G03F1/72 , G01N21/88 , G01N21/956
CPC分类号： G01N21/8851 , G01N21/956 , G01N2021/95676 , G03F1/84
摘要： Disclosed is a method of inspecting a defect present at a surface portion of a photomask blank which includes an optical film, and a thin film. The method includes: selecting and designating an inspection treatment procedure and a criterion for determination of rugged shape of the defect which correspond to modes of the optical film and the thin film of the photomask blank; applying inspection light to a region including the defect while maintaining a distance between the defect and an objective lens of an inspecting optical system, based on the designated inspection treatment procedure, and collecting reflected light from the region irradiated with the inspection light, as a magnified image of the region, through the inspecting optical system; and determining the rugged shape of the defect, from light intensity distribution of the magnified image, based on the designated criterion for determination.
摘要翻译： 公开了一种检查存在于包括光学膜和薄膜的光掩模坯料的表面部分处的缺陷的方法。 该方法包括：选择和指定检验处理程序和用于确定与光掩模坯料的光学膜和薄膜的模式相对应的缺陷的粗糙形状的标准; 基于指定的检查处理程序，将检查光施加到包括缺陷的区域，同时保持检查光学系统的缺陷和物镜之间的距离，并将来自被检查光照射的区域的反射光作为放大 形象的区域，通过检查光学系统; 根据所确定的判定标准，根据放大图像的光强度分布，确定缺陷的粗糙形状。
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4.发明申请DEFECT INSPECTING METHOD, SORTING METHOD, AND PRODUCING METHOD FOR PHOTOMASK BLANK 有权缺陷检查方法，分类方法和光电子空白的生产方法公开(公告)号：US20160377553A1
公开(公告)日：2016-12-29
申请号：US15181691
申请日：2016-06-14
CPC分类号： G03F1/36 , G01B11/24 , G01N21/9501 , G01N2201/0638 , G03F1/84
摘要： A method of inspecting a defect present at a surface portion of a photomask blank having at least one thin film formed on a substrate by use of the inspecting optical system. The method includes setting the distance between the defect and an objective lens of an inspecting optical system to a defocus distance, applying inspection light to the defect through the objective lens, collecting reflected light from the region irradiated with the inspection light, through the objective lens, as a magnified image, identifying a light intensity variation portion of the magnified image, and determining the rugged shape of the defect on the basis of a variation in light intensity of the light intensity variation portion of the magnified image.
摘要翻译： 通过使用检查光学系统检查存在于具有形成在基板上的至少一个薄膜的光掩模坯料的表面部分处的缺陷的方法。 该方法包括将检查光学系统的缺陷与物镜之间的距离设定为散焦距离，通过物镜对检测光施加检查光，通过物镜收集来自被检查光照射的区域的反射光 作为放大图像，识别放大图像的光强变化部分，并且基于放大图像的光强度变化部分的光强度的变化来确定缺陷的粗糙形状。
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公开(公告)号：US20180356721A1
公开(公告)日：2018-12-13
申请号：US15996926
申请日：2018-06-04
发明人： Takuro KOSAKA , Tsuneo TERASAWA , Shigeo IRIE , Takahiro KISHITA
摘要： A photomask blank is processed into a transmissive photomask for use in photolithography for forming a pattern on a recipient using exposure light. The photomask blank comprises a transparent substrate, a first film of a material which is etchable by chlorine/oxygen-based dry etching, and a second film of a silicon-containing material. The second film includes a layer having a refractive index n of at least 1.6 or an extinction coefficient k of at least 0.3 with respect to the wavelength of inspection light which is longer than the exposure light.
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公开(公告)号：US20160216603A1
公开(公告)日：2016-07-28
申请号：US14917748
申请日：2014-07-24
发明人： Tsutomu SUZUKI , Shinichi OHORI , Ryuji KOITABASHI , Hideo NAKAGAWA , Takuro KOSAKA , Takahiro KISHITA , Hiroshi FUKUDA
IPC分类号： G03F1/66 , H01L21/673
CPC分类号： G03F1/66 , H01L21/67359 , H01L21/67393
摘要： The purpose of the present invention is to further reliably reduce the contamination of photomask blanks due to the adherence of the dust and particles generated during the storage, transportation, or operation of the container while suppressing the effect on a resist pattern, thereby improving the quality and yield of the photomask blanks. The present invention pertains to a container (1) for storing photomask blanks that stores, transports, or safeguards photomask blanks (2), wherein at least one of the components is constituted by a thermoplastic resin where the amount of caprolactam measured by the dynamic head space method when kept for 60 minutes at 40° C. is 0.01 ppm or less n-decane conversion amount per resin weight, and the surface resistance value is no more than 1.0E+13 ohms.
摘要翻译： 本发明的目的是为了进一步可靠地减少由于在容器的储存，运输或操作期间产生的灰尘和颗粒的粘附，同时抑制对抗蚀剂图案的影响，从而提高质量，从而可靠地减少光掩模坯料的污染 和光掩模坯料的产率。 本发明涉及一种用于储存，运输或保护光掩模坯料（2）的光掩模坯料的容器（1），其中至少一个部件由热塑性树脂构成，其中由动态头测量的己内酰胺的量 在40℃下保持60分钟时的空间法为每个树脂重量为0.01ppm以下的正癸烷转化量，表面电阻值不大于1.0E + 13欧姆。
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公开(公告)号：US20190384166A1
公开(公告)日：2019-12-19
申请号：US16419130
申请日：2019-05-22
发明人： Takahiro KISHITA
摘要： The present invention is a method of evaluating a photomask blank-associated substrate, including the steps of: taking an image of a surface of the photomask blank-associated substrate to acquire a surface image, acquiring a contrast of the surface image from the acquired surface image, and evaluating the photomask blank-associated substrate on the basis of the acquired contrast of the surface image. This provides a method of evaluating a photomask blank-associated substrate that can conveniently evaluate the surface conditions (e.g., film qualities other than the transparency or the optical constants of an optical film and so on formed on a transparent substrate) of a photomask blank-associated substrate.
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公开(公告)号：US20180209916A1
公开(公告)日：2018-07-26
申请号：US15880158
申请日：2018-01-25
IPC分类号： G01N21/88 , G01N21/956
CPC分类号： G01N21/8851 , G01N21/956 , G01N2021/8874 , G01N2021/95676 , G03F1/84
摘要： A photomask blank having a thin film on a transparent substrate is inspected for defects by irradiating inspection light to a surface region of the blank, collecting the reflected light from the irradiated region via an inspection optical system to form a magnified image of the region, extracting a feature parameter of light intensity distribution from the magnified image, and identifying the bump/pit shape of the defect based on the feature parameter combined with the structure of the thin film. The defect inspection method is effective for discriminating defects of bump or pit shape in a highly reliable manner. On application of the defect inspection method, photomask blanks having no pinhole defects are available at lower costs and higher yields.
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