公开(公告)号：US12084787B2

公开(公告)日：2024-09-10

申请号：US18179633

申请日：2023-03-07

Applicant: GlobalWafers Co., Ltd.

Inventor： Richard Joseph Phillips ,  Salvador Zepeda ,  Patrick Fredrick Boegemann, III ,  William Luter

IPC: C30B15/00 ,  B22C9/00 ,  B28B1/00 ,  B28B1/26 ,  B28B7/00 ,  B28B7/16 ,  C04B35/00 ,  C04B38/00 ,  C30B15/10 ,  C30B15/12 ,  C30B29/06 ,  C30B35/00

CPC classification number: C30B15/10 ,  B22C9/00 ,  B28B1/261 ,  B28B7/16 ,  C04B38/00 ,  C30B15/002 ,  C30B15/12 ,  C30B29/06 ,  C30B35/002 ,  C04B2235/3418 ,  C04B2235/6027 ,  C04B2235/606 ,  C04B2235/656

Abstract: Methods for forming a unitized crucible assembly for holding a melt of silicon for forming a silicon ingot are disclosed. In some embodiments, the methods involve a porous crucible mold having a channel network with a bottom channel, an outer sidewall channel that extends from the bottom channel, and a central weir channel that extends from the bottom channel. A slip slurry may be added to the channel network and the liquid carrier of the slip slurry may be drawn into the mold. The resulting green body may be sintered to form the crucible assembly.

公开(公告)号：US20240254652A1

公开(公告)日：2024-08-01

申请号：US18108461

申请日：2023-02-10

Applicant: LAU Superconductors Inc.

Inventor： Wayne Chung Wei Lau ,  Kysen Grant Boyd Palmer

IPC: C30B15/12 ,  C30B15/30 ,  C30B15/32 ,  C30B33/02

CPC classification number: C30B15/12 ,  C30B15/30 ,  C30B15/32 ,  C30B33/02

Abstract: A system includes a container and a seed crystal holder. The container is configured to hold melted component powders. The seed crystal holder is configured to hold a seed crystal. The seed crystal holder is configured to put the seed crystal in contact with the melted component powders. The seed crystal holder moves the seed crystal to grow a crystal from the melted component powders.

公开(公告)号：US20230366124A1

公开(公告)日：2023-11-16

申请号：US18246524

申请日：2021-09-03

Applicant: HANWHA SOLUTIONS CORPORATION ,  HANWHA CORPORATION

Inventor： Keun Ho KIM ,  Kyung Seok LEE ,  Jin Sung PARK ,  Young Jun LEE

IPC: C30B29/06 ,  C30B15/12 ,  C30B15/30

CPC classification number: C30B29/06 ,  C30B15/12 ,  C30B15/30

Abstract: Disclosed is an ingot growing apparatus. An ingot growing apparatus according to an embodiment of the present invention includes a growth furnace in which a main crucible is disposed, wherein the main crucible accommodates molten silicon and is rotated clockwise or counterclockwise to rotate the molten silicon clockwise or counterclockwise in order to grow an ingot, a susceptor formed to surround an outer surface of the main crucible and rotated in the same direction as the main crucible, and a preliminary melting unit which receives a solid silicon material, melts the solid silicon material into molten silicon, and supplies the molten silicon to the main crucible, wherein the preliminary melting unit includes a preliminary crucible which accommodates the molten silicon, and the preliminary crucible supplies the molten silicon contained in the preliminary crucible to the main crucible in a direction in which the molten silicon contained in the main crucible rotates.

公开(公告)号：US20220064815A1

公开(公告)日：2022-03-03

申请号：US17038591

申请日：2020-09-30

Applicant: Jinko Green Energy (Shanghai) Management Co., LTD ,  JINKO SOLAR CO., LTD.

Inventor： Jun Yang ,  Weize Shang ,  Xiaolong Bai

IPC: C30B15/00 ,  C30B15/12 ,  C30B15/02 ,  C30B15/22 ,  C30B29/06

Abstract: Provided is an apparatus and a method for continuous crystal pulling. The apparatus includes: a crucible including a first sub-crucible and a second sub-crucible located at inner side of the first sub-crucible; a draft tube located above the crucible; and a delivery duct supplying materials to the crucible. A ratio of inner diameter of the second sub-crucible to outer diameter of the draft tube is ≥1.05. In a first state, a distance between bottom surface of the draft tube and bottom surface of the crucible is a first distance, in a second state, a distance between bottom surface of the draft tube and bottom surface of the crucible is a second distance. The first distance is greater than the second distance. In the first and second states, a distance between a crystal-liquid interface in the crucible and the bottom surface of the draft tube remains substantially unchanged.

公开(公告)号：US20200255971A1

公开(公告)日：2020-08-13

申请号：US15776357

申请日：2016-11-18

Applicant: Corner Star Limited

Inventor： Steven Lawrence Kimbel

IPC: C30B15/02 ,  C30B15/12 ,  C30B15/20 ,  C30B29/06

Abstract: A method of recycling monocrystalline segments cut from a monocrystalline ingot of semiconductor or solar grade material is provided. The method includes removing a first monocrystalline segment from the monocrystalline ingot, connecting the first monocrystalline segment to a second monocrystalline segment to form a chain of monocrystalline segments, and introducing the chain of monocrystalline segments into a melt of semiconductor or solar grade material.

公开(公告)号：US10557213B2

公开(公告)日：2020-02-11

申请号：US15920796

申请日：2018-03-14

Applicant: GlobalWafers Co., Ltd.

Inventor： Richard J. Phillips ,  Soubir Basak ,  Gaurab Samanta

IPC: C30B15/14 ,  C30B15/12 ,  C30B29/06

Abstract: A system for growing a crystal ingot from a melt includes a crucible assembly configured to contain the melt and a susceptor configured to support the crucible assembly. The crucible assembly includes a substantially transparent crucible. The system further includes a heating system for generating thermal energy and disposed to supply thermal energy to the susceptor via thermal radiation. The susceptor enables transfer of thermal energy to the melt via radiation through the transparent crucible.

公开(公告)号：US10358740B2

公开(公告)日：2019-07-23

申请号：US14341580

申请日：2014-07-25

Applicant: SunEdison, Inc.

Inventor： Tirumani Swaminathan

IPC: C30B15/12 ,  C30B15/14 ,  C30B15/20 ,  C30B29/06 ,  C30B15/00

Abstract: A system for growing a crystal ingot from a melt is provided. The system includes a crucible assembly, a first heater, a second heater, and a passive heater. The crucible assembly includes a crucible and a weir separating an outer melt zone of the melt from an inner melt zone of the melt. The first heater is configured to supply thermal energy to the melt by conduction through the crucible. The second heater is configured to generate thermal radiation. The passive heater is configured to supply thermal energy to the outer melt zone by transferring thermal radiation generated by the second heater to the outer melt zone.

公开(公告)号：US10202705B2

公开(公告)日：2019-02-12

申请号：US13446353

申请日：2012-04-13

Applicant: Bayard K. Johnson ,  John P. Deluca ,  William L. Luter

Inventor： Bayard K. Johnson ,  John P. Deluca ,  William L. Luter

IPC: C30B15/04 ,  C30B29/06 ,  C30B15/12 ,  H01L31/18 ,  C30B15/00

Abstract: A Czochralski growth system is disclosed comprising a crucible, a silicon delivery system comprising a feeder having a delivery point overhanging the crucible and delivering a controllable amount of silicon into the crucible, and at least one doping mechanism controllably delivering at least one dopant material to the feeder. The system can comprise two or more doping mechanisms each loaded with a different dopant material and can therefore be used to prepare silicon ingots having multiple dopants. The resulting ingots have substantially constant dopant concentrations along their axes. Also disclosed is a method of Czochralski growth of at least one silicon ingot comprising at least one dopant material, which is preferably a continuous Czochralski method.

公开(公告)号：US20180187329A1

公开(公告)日：2018-07-05

申请号：US15398407

申请日：2017-01-04

Applicant: SunEdison, Inc.

Inventor： Salvador Zepeda ,  Richard J. Phillips ,  Christopher Vaughn Luers ,  Steven Lawrence Kimbel ,  Harold W. Korb ,  John D. Holder ,  Carissima Marie Hudson ,  Hariprasad Sreedharamurthy ,  Stephan Haringer ,  Marco Zardoni

IPC: C30B15/20 ,  C30B15/00 ,  C30B15/02 ,  C30B15/12 ,  C30B29/06

CPC classification number: C30B15/20 ,  C30B15/002 ,  C30B15/02 ,  C30B15/12 ,  C30B29/06

Abstract: Systems and methods for forming an ingot from a melt are disclosed. A system includes a crucible defining a cavity for receiving the melt, and a first and second barrier to inhibit movement of the melt. A first passageway and a second passageway are arranged to allow the melt located within an outer zone to move into and through a transition zone and into an inner zone. Conditioning members are placed in at least one of the zones and arranged to contact the melt to reduce the number of micro-voids in the melt.

公开(公告)号：US09863063B2

公开(公告)日：2018-01-09

申请号：US14107743

申请日：2013-12-16

Applicant: SunEdison, Inc.

Inventor： Tirumani N. Swaminathan

IPC: C30B15/12 ,  C30B15/00 ,  C30B11/00

CPC classification number: C30B15/12 ,  C30B11/002 ,  C30B15/002 ,  Y10T117/1052

Abstract: A system for growing a crystal ingot includes a crucible and a weir. The crucible has a base and a sidewall for the containment of a silicon melt therein. The weir is located along the base of the crucible inward from the sidewall of the crucible. The weir has a body connected with at least a pair of legs disposed to inhibit movement of the silicon melt therebetween.