公开(公告)号：US10202705B2

公开(公告)日：2019-02-12

申请号：US13446353

申请日：2012-04-13

Applicant: Bayard K. Johnson ,  John P. Deluca ,  William L. Luter

Inventor： Bayard K. Johnson ,  John P. Deluca ,  William L. Luter

IPC: C30B15/04 ,  C30B29/06 ,  C30B15/12 ,  H01L31/18 ,  C30B15/00

Abstract: A Czochralski growth system is disclosed comprising a crucible, a silicon delivery system comprising a feeder having a delivery point overhanging the crucible and delivering a controllable amount of silicon into the crucible, and at least one doping mechanism controllably delivering at least one dopant material to the feeder. The system can comprise two or more doping mechanisms each loaded with a different dopant material and can therefore be used to prepare silicon ingots having multiple dopants. The resulting ingots have substantially constant dopant concentrations along their axes. Also disclosed is a method of Czochralski growth of at least one silicon ingot comprising at least one dopant material, which is preferably a continuous Czochralski method.

公开(公告)号：US09105786B2

公开(公告)日：2015-08-11

申请号：US13446450

申请日：2012-04-13

Applicant: John P. Deluca

Inventor： John P. Deluca

IPC: H01L31/0264 ,  H01L31/18 ,  H01L31/068

CPC classification number: H01L31/068 ,  H01L31/1864 ,  Y02E10/547 ,  Y02P70/521

Abstract: Efficiency of silicon photovoltaic solar cells is increased by an annealing process for immobilizing oxygen formed in Czochralski-grown silicon. The annealing process includes a short anneal in a rapid thermal annealing chamber at a high temperature, for example, greater than 1150° C. in an oxygen-containing ambient. More preferably, the wafer is rapidly cooled to less than 950° C. without an intermediate temperature hold, at which temperature oxygen does not nucleate and/or precipitate. Subsequent processing to form a photovoltaic structure is typically performed at relatively low temperatures of less than 1000° C. or even 875° C.

Abstract translation: 通过用于固定在Czochralski生长的硅中形成的氧的退火工艺来提高硅光伏太阳能电池的效率。 退火过程包括在快速热退火室中在含氧环境中的高温例如大于1150℃的短退火。 更优选地，将晶片快速冷却至小于950℃，而不需要中间温度保持，在该温度下，氧不会成核和/或沉淀。 形成光伏结构的后续处理通常在小于1000℃或甚至875℃的较低温度下进行。