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    SILICON INGOT HAVING UNIFORM MULTIPLE DOPANTS AND METHOD AND APPARATUS FOR PRODUCING SAME
    1.
    发明申请
    SILICON INGOT HAVING UNIFORM MULTIPLE DOPANTS AND METHOD AND APPARATUS FOR PRODUCING SAME 审中-公开
    具有均匀多重掺杂物的硅芯及其制造方法和装置

    公开(公告)号：US20120301386A1

    公开(公告)日：2012-11-29

    申请号：US13446353

    申请日：2012-04-13

    Applicant: Bayard K. Johnson ,  John P. DeLuca ,  William L. Luter

    Inventor： Bayard K. Johnson ,  John P. DeLuca ,  William L. Luter

    IPC: C30B15/04 ,  C01B33/02 ,  C30B15/12

    CPC classification number: C30B15/04 ,  C30B15/002 ,  C30B15/12 ,  C30B29/06 ,  H01L31/182 ,  Y02E10/546 ,  Y02P70/521 ,  Y10T117/1052 ,  Y10T117/1056

    Abstract: A Czochralski growth system is disclosed comprising a crucible, a silicon delivery system comprising a feeder having a delivery point overhanging the crucible and delivering a controllable amount of silicon into the crucible, and at least one doping mechanism controllably delivering at least one dopant material to the feeder. The system can comprise two or more doping mechanisms each loaded with a different dopant material and can therefore be used to prepare silicon ingots having multiple dopants. The resulting ingots have substantially constant dopant concentrations along their axes. Also disclosed is a method of Czochralski growth of at least one silicon ingot comprising at least one dopant material, which is preferably a continuous Czochralski method.

    Abstract translation: 公开了一种切克劳斯基生长系统，其包括坩埚，硅输送系统，其包括具有突出坩埚的输送点并将可控量的硅输送到坩埚中的进料器，以及至少一种掺杂机制，其可控制地将至少一种掺杂剂材料输送到 进料器 该系统可以包括两个或更多个掺杂机制，每个掺杂机制装载有不同的掺杂剂材料，因此可以用于制备具有多种掺杂剂的硅锭。 所产生的锭沿其轴线具有基本恒定的掺杂剂浓度。 还公开了至少一个含有至少一种掺杂剂材料的硅锭生长Czochralski的方法，其优选是连续的Czochralski法。

    Silicon Single Crystal Doped with Gallium, Indium, or Aluminum
    2.
    发明申请
    Silicon Single Crystal Doped with Gallium, Indium, or Aluminum 有权
    掺杂有镓，铟或铝的硅单晶

    公开(公告)号：US20120056135A1

    公开(公告)日：2012-03-08

    申请号：US13224019

    申请日：2011-09-01

    Applicant: John P. DeLuca ,  Frank S. Delk, II ,  Bayard K. Johnson ,  William L. Luter ,  Neil D. Middendorf ,  Dick S. Williams ,  Nels Patrick Ostrom ,  James N. Highfill

    Inventor： John P. DeLuca ,  Frank S. Delk, II ,  Bayard K. Johnson ,  William L. Luter ,  Neil D. Middendorf ,  Dick S. Williams ,  Nels Patrick Ostrom ,  James N. Highfill

    IPC: H01B1/04 ,  B65D85/84 ,  C30B15/04

    CPC classification number: C30B15/04 ,  C30B15/002 ,  C30B29/06

    Abstract: A doped silicon single crystal having a resistivity variation along a longitudinal and/or radial axis of less than 10% and a method of preparing one or a sequential series of doped silicon crystals is disclosed. The method includes providing a melt material comprising silicon into a continuous Czochralski crystal growth apparatus, delivering a dopant, such as gallium, indium, or aluminum, to the melt material, providing a seed crystal into the melt material when the melt material is in molten form, and growing a doped silicon single crystal by withdrawing the seed crystal from the melt material. Additional melt material is provided to the apparatus during the growing step. A doping model for calculating the amount of dopant to be delivered into the melt material during one or more doping events, methods for delivering the dopant, and vessels and containers used to deliver the dopant are also disclosed.

    Abstract translation: 公开了具有小于10％的纵向和/或径向轴的电阻率变化的掺杂硅单晶以及制备一个或一系列顺序的掺杂硅晶体的方法。 该方法包括将包含硅的熔体材料提供到连续的切克劳斯基晶体生长装置中，将诸如镓，铟或铝的掺杂剂输送到熔体材料中，当熔体材料熔融时，将晶种提供到熔体材料中 形成并通过从熔体材料中取出晶种来生长掺杂的硅单晶。 在生长步骤期间将额外的熔体材料提供给设备。 还公开了一种用于计算在一个或多个掺杂事件期间输送到熔体材料中的掺杂剂的量的掺杂模型，用于输送掺杂剂的方法，以及用于输送掺杂剂的容器和容器的掺杂模型。

    Silicon single crystal doped with gallium, indium, or aluminum
    4.
    发明授权
    Silicon single crystal doped with gallium, indium, or aluminum 有权
    用镓，铟或铝掺杂的单晶硅

    公开(公告)号：US09051659B2

    公开(公告)日：2015-06-09

    申请号：US13224019

    申请日：2011-09-01

    Applicant: John P. DeLuca ,  Frank S. Delk, II ,  Bayard K. Johnson ,  William L. Luter ,  Neil D. Middendorf ,  Dick S. Williams ,  Nels Patrick Ostrom ,  James N. Highfill

    Inventor： John P. DeLuca ,  Frank S. Delk, II ,  Bayard K. Johnson ,  William L. Luter ,  Neil D. Middendorf ,  Dick S. Williams ,  Nels Patrick Ostrom ,  James N. Highfill

    IPC: C30B15/04 ,  C30B29/06 ,  C30B15/00

    CPC classification number: C30B15/04 ,  C30B15/002 ,  C30B29/06

    Abstract: A doped silicon single crystal having a resistivity variation along a longitudinal and/or radial axis of less than 10% and a method of preparing one or a sequential series of doped silicon crystals is disclosed. The method includes providing a melt material comprising silicon into a continuous Czochralski crystal growth apparatus, delivering a dopant, such as gallium, indium, or aluminum, to the melt material, providing a seed crystal into the melt material when the melt material is in molten form, and growing a doped silicon single crystal by withdrawing the seed crystal from the melt material. Additional melt material is provided to the apparatus during the growing step. A doping model for calculating the amount of dopant to be delivered into the melt material during one or more doping events, methods for delivering the dopant, and vessels and containers used to deliver the dopant are also disclosed.

    Abstract translation: 公开了具有小于10％的纵向和/或径向轴的电阻率变化的掺杂硅单晶以及制备一个或一系列顺序的掺杂硅晶体的方法。 该方法包括将包含硅的熔体材料提供到连续的切克劳斯基晶体生长装置中，将诸如镓，铟或铝的掺杂剂输送到熔体材料中，当熔体材料熔融时，将晶种提供到熔体材料中 形成并通过从熔体材料中取出晶种来生长掺杂的硅单晶。 在生长步骤期间将额外的熔体材料提供给设备。 还公开了一种用于计算在一个或多个掺杂事件期间输送到熔体材料中的掺杂剂的量的掺杂模型，用于输送掺杂剂的方法，以及用于输送掺杂剂的容器和容器的掺杂模型。

    Process for producing low defect density, ideal oxygen precipitating silicon
    6.
    发明授权
    Process for producing low defect density, ideal oxygen precipitating silicon 有权
    生产低缺陷密度的工艺，理想的氧沉淀硅

    公开(公告)号：US06896728B2

    公开(公告)日：2005-05-24

    申请号：US10373899

    申请日：2003-02-25

    Applicant: Robert J. Falster ,  Joseph C. Holzer ,  Marco Cornara ,  Daniela Gambaro ,  Massimiliano Olmo ,  Steve A. Markgraf ,  Paolo Mutti ,  Seamus A. McQuaid ,  Bayard K. Johnson

    Inventor： Robert J. Falster ,  Joseph C. Holzer ,  Marco Cornara ,  Daniela Gambaro ,  Massimiliano Olmo ,  Steve A. Markgraf ,  Paolo Mutti ,  Seamus A. McQuaid ,  Bayard K. Johnson

    IPC: C30B29/06 ,  C30B15/00 ,  C30B15/20 ,  C30B33/00 ,  C30B33/02 ,  H01L21/322 ,  C30B15/04 ,  C30B25/16

    CPC classification number: H01L21/3225 ,  C30B15/203 ,  C30B15/206 ,  C30B29/06 ,  C30B33/00 ,  C30B33/02 ,  Y10T428/21 ,  Y10T428/249969

    Abstract: The present invention is directed to a process for producing a silicon wafer which, during the heat treatment cycles of essentially any arbitrary electronic device manufacturing process, may form an ideal, non-uniform depth distribution of oxygen precipitates and may additionally contain an axially symmetric region which is substantially free of agglomerated intrinsic point defects. The process including growing a single crystal silicon ingot from molten silicon, and as part of the growth process, controlling (i) a growth velocity, v, (ii) an average axial temperature gradient, G0, during the growth of a constant diameter portion of the crystal over a temperature range from solidification to a temperature of no less than about 1325° C., and (iii) a cooling rate of the crystal from a solidification temperature to about 1,050° C., in order to cause the formation of an axially symmetrical segment which is substantially free of agglomerated intrinsic point defects. A silicon wafer is then sliced from the ingot, subjected to a heat-treatment to form crystal lattice vacancies in the front surface and bulk layers of the wafer and cooled at a rate sufficient to cause a non-uniform vacancy concentration profile in the wafer such that a thermal treatment at a temperature in excess of 750° C., is capable of forming in the wafer a denuded zone in the front surface layer and oxygen clusters or precipitates in the bulk zone with the concentration of the oxygen clusters or precipitates in the bulk layer being primarily dependant upon the concentration of vacancies.

    Abstract translation: 本发明涉及一种用于制造硅晶片的方法，其在基本上任意的任何电子器件制造工艺的热处理循环期间可以形成氧沉淀物的理想的，不均匀的深度分布，并且还可以包含轴对称区域 其基本上没有附聚的固有点缺陷。 该方法包括从熔融硅生长单晶硅锭，并且作为生长过程的一部分，控制（i）恒定直径部分生长期间的生长速度v，（ii）平均轴向温度梯度G0 的晶体在从凝固到不低于约1325℃的温度的温度范围内，和（iii）晶体从固化温度至约1050℃的冷却速率，以便形成 基本上没有凝聚的固有点缺陷的轴对称段。 然后将硅晶片从锭切片，进行热处理以在晶片的前表面和本体层中形成晶格空位，并以足以在晶片中引起不均匀的空位浓度分布的速率冷却，如 在超过750℃的温度下的热处理能够在晶片中形成前表面层中的剥离区域，并且在本体区域中的氧簇或沉淀物中的氧簇或沉淀物的浓度在 主体层主要取决于空位的浓度。

    Low defect density, self-interstitial dominated silicon
    7.
    发明授权
    Low defect density, self-interstitial dominated silicon 有权
    用于生产低缺陷密度，自我间质主导硅的方法，其中V / Go通过控制熔体/固体界面处的热传递来控制

    公开(公告)号：US06409826B2

    公开(公告)日：2002-06-25

    申请号：US09816015

    申请日：2001-03-23

    Applicant: Robert A. Falster ,  Joseph C. Holzer ,  Steve A. Markgraf ,  Paolo Mutti ,  Seamus A. McQuaid ,  Bayard K. Johnson

    Inventor： Robert A. Falster ,  Joseph C. Holzer ,  Steve A. Markgraf ,  Paolo Mutti ,  Seamus A. McQuaid ,  Bayard K. Johnson

    IPC: C30B1514

    CPC classification number: C30B29/06 ,  C30B15/00 ,  C30B15/14 ,  C30B15/203 ,  C30B15/206 ,  C30B33/00 ,  H01L21/3225 ,  Y10T117/1004 ,  Y10T428/21

    Abstract: The present invention relates a process for the preparation of single crystal silicon, which contains an axially symmetric region which is free of agglomerated intrinsic point defects. The process for growing the single crystal silicon including controlling the ratio v/G0, where v is the growth velocity and G0 is the average axial temperature gradient during the growth of a constant diameter portion of the crystal over a temperature range from solidification to a temperature of no less than about 1325° C., and a cooling rate of the crystal from a solidification temperature to about 1,050° C., in order to cause the formation of an axially symmetrical segment which is substantially free of agglomerated intrinsic point defects. The control of V/G0 accomplished by controlling heat transfer at the melt/solid interface.

    Abstract translation: 本发明涉及一种制备单晶硅的方法，该方法含有一个没有聚集的固有点缺陷的轴向对称区域。 生长单晶硅的过程包括控制比例v / G0，其中v是生长速度，G0是在从凝固到温度的温度范围内晶体的恒定直径部分生长期间的平均轴向温度梯度 不低于约1325℃，以及晶体从凝固温度至约1050℃的冷却速率，以形成基本上没有团聚的固有点缺陷的轴对称段。 通过控制熔体/固体界面处的热传递来实现V / G0的控制。

    Continuous oxidation process for crystal pulling apparatus
    8.
    发明授权
    Continuous oxidation process for crystal pulling apparatus 有权
    晶体拉伸装置的连续氧化工艺

    公开(公告)号：US6039801A

    公开(公告)日：2000-03-21

    申请号：US167747

    申请日：1998-10-07

    Applicant: John D. Holder ,  Bayard K. Johnson

    Inventor： John D. Holder ,  Bayard K. Johnson

    IPC: C30B29/06 ,  C30B15/00 ,  C30B15/14

    CPC classification number: C30B29/06 ,  C30B15/14 ,  Y10T117/1032

    Abstract: A continuous oxidation process and apparatus for using the same are disclosed. During growth of a semiconductor crystal an oxygen-containing gas is continuously injected into the crystal pulling apparatus in an exhaust tunnel downstream from the hot zone to continuously oxidize hypostoichiometric silicon dioxide, silicon vapor, and silicon monoxide produced in the hot zone during the crystal growth so as to minimize or eliminate the possibility of rapid over-pressurization of the apparatus upon exposure to the atmosphere.

    Abstract translation: 公开了一种连续氧化工艺及其使用方法。 在半导体晶体生长期间，在热区下游的排气隧道中将含氧气体连续地注入到拉制装置中，以在晶体生长期间连续氧化在热区产生的化学计量的二氧化硅，硅蒸气和一氧化硅 以便最小化或消除在暴露于大气中时装置的快速过压的可能性。

    GROWTH OF A UNIFORMLY DOPED SILICON INGOT BY DOPING ONLY THE INITIAL CHARGE
    9.
    发明申请
    GROWTH OF A UNIFORMLY DOPED SILICON INGOT BY DOPING ONLY THE INITIAL CHARGE 审中-公开
    均匀掺杂的硅含量的增长仅仅是初始充电

    公开(公告)号：US20120279437A1

    公开(公告)日：2012-11-08

    申请号：US13464203

    申请日：2012-05-04

    Applicant: Bayard K. Johnson

    Inventor： Bayard K. Johnson

    IPC: C30B15/04 ,  C30B15/10 ,  C30B15/02

    Abstract: The present invention relates to a method of growing a silicon ingot comprising a dopant material having a segregation coefficient of k, wherein the concentration of the dopant is axially substantially uniform throughout the ingot. The method comprises the steps of providing a crucible having an inner growth zone in fluid communication with an outer feed zone, and the inner growth zone and the outer feed zone have cross-sectional areas that are can be used to determine conditions for maintaining dopant uniformity for the specific dopant material used. A crystalline growth system for growing at least one uniformly doped silicon ingot is also disclosed.

    Abstract translation: 本发明涉及一种生长硅锭的方法，该方法包括偏析系数为k的掺杂剂材料，其中掺杂剂的浓度在整个晶锭中轴向上基本上均匀。 该方法包括以下步骤：提供具有与外部进料区流体连通的内部生长区的坩埚，并且内部生长区和外部进料区具有可用于确定维持掺杂剂均匀性的条件的横截面区域 对于所用的特定掺杂剂材料。 还公开了用于生长至少一个均匀掺杂的硅锭的晶体生长系统。

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