公开(公告)号：US20120056135A1

公开(公告)日：2012-03-08

申请号：US13224019

申请日：2011-09-01

Applicant: John P. DeLuca ,  Frank S. Delk, II ,  Bayard K. Johnson ,  William L. Luter ,  Neil D. Middendorf ,  Dick S. Williams ,  Nels Patrick Ostrom ,  James N. Highfill

Inventor： John P. DeLuca ,  Frank S. Delk, II ,  Bayard K. Johnson ,  William L. Luter ,  Neil D. Middendorf ,  Dick S. Williams ,  Nels Patrick Ostrom ,  James N. Highfill

IPC: H01B1/04 ,  B65D85/84 ,  C30B15/04

CPC classification number: C30B15/04 ,  C30B15/002 ,  C30B29/06

Abstract: A doped silicon single crystal having a resistivity variation along a longitudinal and/or radial axis of less than 10% and a method of preparing one or a sequential series of doped silicon crystals is disclosed. The method includes providing a melt material comprising silicon into a continuous Czochralski crystal growth apparatus, delivering a dopant, such as gallium, indium, or aluminum, to the melt material, providing a seed crystal into the melt material when the melt material is in molten form, and growing a doped silicon single crystal by withdrawing the seed crystal from the melt material. Additional melt material is provided to the apparatus during the growing step. A doping model for calculating the amount of dopant to be delivered into the melt material during one or more doping events, methods for delivering the dopant, and vessels and containers used to deliver the dopant are also disclosed.

Abstract translation: 公开了具有小于10％的纵向和/或径向轴的电阻率变化的掺杂硅单晶以及制备一个或一系列顺序的掺杂硅晶体的方法。 该方法包括将包含硅的熔体材料提供到连续的切克劳斯基晶体生长装置中，将诸如镓，铟或铝的掺杂剂输送到熔体材料中，当熔体材料熔融时，将晶种提供到熔体材料中 形成并通过从熔体材料中取出晶种来生长掺杂的硅单晶。 在生长步骤期间将额外的熔体材料提供给设备。 还公开了一种用于计算在一个或多个掺杂事件期间输送到熔体材料中的掺杂剂的量的掺杂模型，用于输送掺杂剂的方法，以及用于输送掺杂剂的容器和容器的掺杂模型。

公开(公告)号：US09051659B2

公开(公告)日：2015-06-09

申请号：US13224019

申请日：2011-09-01

Applicant: John P. DeLuca ,  Frank S. Delk, II ,  Bayard K. Johnson ,  William L. Luter ,  Neil D. Middendorf ,  Dick S. Williams ,  Nels Patrick Ostrom ,  James N. Highfill

Inventor： John P. DeLuca ,  Frank S. Delk, II ,  Bayard K. Johnson ,  William L. Luter ,  Neil D. Middendorf ,  Dick S. Williams ,  Nels Patrick Ostrom ,  James N. Highfill

IPC: C30B15/04 ,  C30B29/06 ,  C30B15/00

CPC classification number: C30B15/04 ,  C30B15/002 ,  C30B29/06

Abstract: A doped silicon single crystal having a resistivity variation along a longitudinal and/or radial axis of less than 10% and a method of preparing one or a sequential series of doped silicon crystals is disclosed. The method includes providing a melt material comprising silicon into a continuous Czochralski crystal growth apparatus, delivering a dopant, such as gallium, indium, or aluminum, to the melt material, providing a seed crystal into the melt material when the melt material is in molten form, and growing a doped silicon single crystal by withdrawing the seed crystal from the melt material. Additional melt material is provided to the apparatus during the growing step. A doping model for calculating the amount of dopant to be delivered into the melt material during one or more doping events, methods for delivering the dopant, and vessels and containers used to deliver the dopant are also disclosed.

Abstract translation: 公开了具有小于10％的纵向和/或径向轴的电阻率变化的掺杂硅单晶以及制备一个或一系列顺序的掺杂硅晶体的方法。 该方法包括将包含硅的熔体材料提供到连续的切克劳斯基晶体生长装置中，将诸如镓，铟或铝的掺杂剂输送到熔体材料中，当熔体材料熔融时，将晶种提供到熔体材料中 形成并通过从熔体材料中取出晶种来生长掺杂的硅单晶。 在生长步骤期间将额外的熔体材料提供给设备。 还公开了一种用于计算在一个或多个掺杂事件期间输送到熔体材料中的掺杂剂的量的掺杂模型，用于输送掺杂剂的方法，以及用于输送掺杂剂的容器和容器的掺杂模型。