Invention Grant
- Patent Title: Crystal growing systems and methods including a passive heater
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Application No.: US14341580Application Date: 2014-07-25
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Publication No.: US10358740B2Publication Date: 2019-07-23
- Inventor: Tirumani Swaminathan
- Applicant: SunEdison, Inc.
- Applicant Address: HK Hong Kong
- Assignee: Corner Star Limited
- Current Assignee: Corner Star Limited
- Current Assignee Address: HK Hong Kong
- Agency: Armstrong Teasdale LLP
- Main IPC: C30B15/12
- IPC: C30B15/12 ; C30B15/14 ; C30B15/20 ; C30B29/06 ; C30B15/00

Abstract:
A system for growing a crystal ingot from a melt is provided. The system includes a crucible assembly, a first heater, a second heater, and a passive heater. The crucible assembly includes a crucible and a weir separating an outer melt zone of the melt from an inner melt zone of the melt. The first heater is configured to supply thermal energy to the melt by conduction through the crucible. The second heater is configured to generate thermal radiation. The passive heater is configured to supply thermal energy to the outer melt zone by transferring thermal radiation generated by the second heater to the outer melt zone.
Public/Granted literature
- US20160024685A1 CRYSTAL GROWING SYSTEMS AND METHODS INCLUDING A PASSIVE HEATER Public/Granted day:2016-01-28
Information query
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