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    Wafer processing method
    1.
    发明授权
    Wafer processing method 有权

    公开(公告)号：US10332777B2

    公开(公告)日：2019-06-25

    申请号：US15977359

    申请日：2018-05-11

    Applicant: DISCO CORPORATION

    Inventor： Kazuma Sekiya

    IPC: H01L21/44 ,  H01L21/48 ,  H01L21/50 ,  B24B1/00 ,  B24B7/19 ,  B24B7/30 ,  H01L21/683 ,  H01L21/56 ,  H01L21/67 ,  H01L21/304

    Abstract: A wafer processing method includes a liquid supplying step of supplying a liquid to the front side of a wafer, a close contact making step of pressing a protective film against the front side of the wafer with the liquid interposed therebetween, thereby bringing the protective film into close contact with the front side of the wafer, a protective member fixing step of covering the protective film, with a protective member formed from a liquid resin curable by external stimulus, thereby fixing the protective member through the protective film to the front side of the wafer, a grinding step of grinding the back side of the wafer to reduce the thickness of the wafer, and a peeling step of peeling the protective film and the protective member from the wafer thinned by the grinding step.

    Hydrogen gas detecting material and the coating method
    3.
    发明授权
    Hydrogen gas detecting material and the coating method 有权
    氢气检测材料及涂层方法

    公开(公告)号：US08052898B2

    公开(公告)日：2011-11-08

    申请号：US12225815

    申请日：2007-04-04

    Applicant: Katsuyoshi Takano ,  Shunya Yamamoto ,  Aichi Inouye ,  Masaki Sugimoto ,  Masahito Yoshikawa

    Inventor： Katsuyoshi Takano ,  Shunya Yamamoto ,  Aichi Inouye ,  Masaki Sugimoto ,  Masahito Yoshikawa

    IPC: G02B5/23 ,  B24B1/00 ,  B24B7/19 ,  B24B7/30

    CPC classification number: G01N33/005 ,  B82Y30/00 ,  G01N21/783

    Abstract: A hydrogen gas detecting material, which changes in light absorption characteristics when exposed to an atmosphere containing hydrogen, and the coating method are characterized in that (1) the principal component of the hydrogen gas detecting material is tungsten oxide, (2) palladium is deposited on the surface of the tungsten oxide, (3) the tungsten oxide is coated on a substrate by a sputtering method involving a controlled oxygen pressure, and (4) the temperature of the substrate during coating with the tungsten oxide is room temperature (20° C.).

    Abstract translation: 一种氢气检测材料，当暴露于含氢气氛时，其光吸收特性发生变化，涂布方法的特征在于：（1）氢气检测材料的主要成分为氧化钨，（2）钯沉积 在氧化钨的表面上，（3）通过涉及受控氧压的溅射法将氧化钨涂覆在基板上，（4）在用钨氧化物涂覆的过程中，基板的温度为室温（20°） C。）。

    Method of producing polishing material comprising diamond clusters
    5.
    发明授权
    Method of producing polishing material comprising diamond clusters 有权
    制造包含金刚石簇的抛光材料的方法

    公开(公告)号：US07857876B2

    公开(公告)日：2010-12-28

    申请号：US12420557

    申请日：2009-04-08

    Applicant: Noriyuki Kumasaka ,  Yuji Horie ,  Mitsuru Saito ,  Kazuei Yamaguchi

    Inventor： Noriyuki Kumasaka ,  Yuji Horie ,  Mitsuru Saito ,  Kazuei Yamaguchi

    IPC: B24D3/02 ,  C09C1/68 ,  C09K3/14 ,  H01L21/302 ,  C09G1/02 ,  B24B1/00 ,  B24B7/19

    CPC classification number: G11B5/8404 ,  B24D11/00 ,  C01B32/25 ,  C09K3/1436 ,  C09K3/1463

    Abstract: Diamond clusters are used as a polishing material of free abrading particles, each being a combination of artificial diamond particles having primary particle diameters of 20 nm or less and impurities that are attached around these diamond particles. The density of non-diamond carbon contained in the impurities is in the range of 95% or more and 99% or less, and the density of chlorine contained in other than non-diamond carbon in the impurities is 0.5% or more and preferably 3.5% or less. The diameters of these diamond clusters are in the range of 30 nm or more and 500 nm or less, and their average diameter is in the range of 30 nm or more and 200 nm or less. Such polishing material is produced first by an explosion shock method to obtain diamond clusters and then removing the impurities such that density of non-diamond carbon contained in the impurities and density of chlorine contained in other than non-diamond carbon in the impurities become adjusted.

    Abstract translation: 金刚石簇用作自由研磨颗粒的抛光材料，每个颗粒是一次粒径为20nm以下的人造金刚石颗粒和附着在这些金刚石颗粒周围的杂质的组合。 杂质中含有的非金刚石碳的密度在95％以上且99％以下的范围，杂质以外的非金刚石碳以外的氯的密度为0.5％以上，优选为3.5 ％ 或更少。 这些金刚石簇的直径在30nm以上且500nm以下的范围内，其平均直径为30nm以上且200nm以下的范围。 首先通过爆炸冲击法制造这种抛光材料，以获得金刚石簇，然后除去杂质，从而调节杂质中包含的非金刚石碳的密度和杂质中除非金刚石碳以外的其它的密度。

    Polishing pad and semiconductor device manufacturing method
    6.
    发明授权
    Polishing pad and semiconductor device manufacturing method 有权
    抛光垫和半导体器件的制造方法

    公开(公告)号：US07731568B2

    公开(公告)日：2010-06-08

    申请号：US10598717

    申请日：2004-10-20

    Applicant: Tetsuo Shimomura ,  Masahiko Nakamori ,  Takatoshi Yamada ,  Kazuyuki Ogawa ,  Atsushi Kazuno ,  Masahiro Watanabe

    Inventor： Tetsuo Shimomura ,  Masahiko Nakamori ,  Takatoshi Yamada ,  Kazuyuki Ogawa ,  Atsushi Kazuno ,  Masahiro Watanabe

    IPC: B24B7/00 ,  B24B7/19 ,  B24B5/00 ,  B24B29/00 ,  B24D11/00

    CPC classification number: B24B37/205 ,  H01L21/30625

    Abstract: The object of the invention is to provide a polishing pad capable of maintaining high-precision end-point optical detection over a long period from the start of use to the end of use even if polishing is performed with an alkaline or acid slurry, as well as a method of manufacturing a semiconductor device with this polishing pad. The polishing pad of the invention is used in chemical mechanical polishing and has a polishing region and a light-transmitting region, wherein the light-transmitting region satisfies that the difference ΔT (ΔT=T0−T1) (%) between T0 and T1 is within 10(%) over the whole range of measurement wavelengths of from 400 to 700 nm, wherein T1 is the light transmittance (%) of the light-transmitting region measured at the measurement wavelength λ after dipping for 24 hours in a KOH aqueous solution at pH 11 or an H2O2 aqueous solution at pH 4 and T0 is the light-transmittance (%) measured at the measurement wavelength λ before the dipping.

    Abstract translation: 本发明的目的是提供一种抛光垫，即使在用碱性或酸性浆料进行研磨的同时，也能够在从使用开始到使用结束的长时间内保持高精度的端点光学检测 作为使用该研磨垫的半导体装置的制造方法。 本发明的抛光垫用于化学机械抛光，并具有抛光区域和透光区域，其中透光区域满足以下区别：Dgr; T（＆Dgr; T = T0-T1）（％） T0和T1在400〜700nm的测量波长的整个范围内在10（％）以内，其中T1是在浸渍24小时后在测量波长λ测量的透光区域的透光率（％） pH为11的KOH水溶液或pH4的H 2 O 2水溶液，T0为在浸渍前测定的波长λ下测定的透光率（％）。

    Method of polishing end surfaces of a substrate for a recording medium by a grain flow processing method
    7.
    发明授权
    Method of polishing end surfaces of a substrate for a recording medium by a grain flow processing method 失效
    通过谷物流处理方法对记录介质用基板的端面进行研磨的方法

    公开(公告)号：US07654884B2

    公开(公告)日：2010-02-02

    申请号：US11660924

    申请日：2005-08-26

    Applicant: Kazuyuki Haneda ,  Yoshio Kawakami

    Inventor： Kazuyuki Haneda ,  Yoshio Kawakami

    IPC: B24B1/00 ,  B24B31/00 ,  B24B7/19 ,  G11B5/712

    CPC classification number: B24B9/065 ,  G11B5/8404

    Abstract: The object of the invention is to provide a method of polishing the end surfaces of a substrate for a recording medium, which is capable of efficiently polishing the inner peripheral end surface and/or the outer peripheral end surface of the substrate preventing the reliability of performance of the recording medium from being impaired by the adhesion of the residual polishing material. According to the invention, there is provided a method of polishing end surfaces of a substrate for a recording medium wherein an inner peripheral end surface or an outer peripheral end surface of a substrate for a disk-like recording medium having a circular hole at the central portion thereof is brought into contact with a polishing medium obtained by dispersing polishing grains in a viscoelastic resin carrier and the polishing medium flows, thereby to polish the inner peripheral end surface or the outer peripheral end surface.

    Abstract translation: 本发明的目的是提供一种抛光用于记录介质的基板的端面的方法，其能够有效地抛光基板的内周端面和/或外周端面，从而防止性能的可靠性 的记录介质受到残留的抛光材料的粘附的损害。 根据本发明，提供了一种抛光用于记录介质的基板的端面的方法，其中在中央处具有圆形孔的盘状记录介质用基板的内周端面或外周端面 使其部分与通过将研磨颗粒分散在粘弹性树脂载体中而获得的抛光介质接触，并且抛光介质流动，从而抛光内周端面或外周端面。

    Wafer polishing method and polished wafer
    8.
    发明授权
    Wafer polishing method and polished wafer 有权
    晶圆抛光方法和抛光晶圆

    公开(公告)号：US07588481B2

    公开(公告)日：2009-09-15

    申请号：US11468570

    申请日：2006-08-30

    Applicant: Toshinari Murai ,  Yukio Shibano

    Inventor： Toshinari Murai ,  Yukio Shibano

    IPC: B24B7/19 ,  B24B7/30 ,  B24B19/00

    CPC classification number: B24B37/28 ,  B24B37/30

    Abstract: A wafer substrate is polished by disposing the wafer substrate between an abrasive cloth on a polishing platen and a plate, and relatively rotating the polishing platen and the plate for mirror polishing the surface of the wafer substrate with the abrasive cloth. A liquid is fed onto the plate side surface of the wafer substrate so that the wafer substrate is directly held to the plate by the adsorption force of the liquid, while performing the mirror polishing.

    Abstract translation: 通过将晶片衬底设置在研磨台板上的研磨布与板之间，并相对旋转研磨台板和板，用研磨布对晶片基板的表面进行镜面抛光来研磨晶片基板。 将液体供给到晶片基板的板侧表面，从而通过液体的吸附力将晶片基板直接固定在板上，同时进行镜面抛光。

    Lawnmower blade sharpener
    9.
    发明授权
    Lawnmower blade sharpener 失效
    割草机刀片磨刀机

    公开(公告)号：US07503835B2

    公开(公告)日：2009-03-17

    申请号：US11672314

    申请日：2007-02-07

    Applicant: Don Cotton

    Inventor： Don Cotton

    IPC: B24B7/19

    CPC classification number: B24B3/42

    Abstract: In one embodiment, a method of sharpening reel blades on a lawnmower reel includes positioning a grinding wheel in contact with the reel, rotating the grinding wheel about an axis of rotation, linearly translating the grinding wheel along a longitudinal path. and rotating the reel about its longitudinal axis. The axis of rotation of the grinding wheel is transverse to a longitudinal axis of the reel.

    Abstract translation: 在一个实施例中，一种磨削割草机卷轴上的卷轴刀片的方法包括定位与卷轴接触的砂轮，使砂轮围绕旋转轴线旋转，沿着纵向路线直线平移砂轮。 并绕其纵向轴线旋转卷轴。 砂轮的旋转轴线横向于卷轴的纵向轴线。

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