公开(公告)号：US20070266642A1

公开(公告)日：2007-11-22

申请号：US11878504

申请日：2007-07-25

Applicant: Masato Yoshida ,  Toranosuke Ashizawa ,  Hiroki Terazaki ,  Yuuto Ootuki ,  Yasushi Kurata ,  Jun Matsuzawa ,  Kiyohito Tanno

Inventor： Masato Yoshida ,  Toranosuke Ashizawa ,  Hiroki Terazaki ,  Yuuto Ootuki ,  Yasushi Kurata ,  Jun Matsuzawa ,  Kiyohito Tanno

IPC: B24B7/22

CPC classification number: C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  H01L21/31053

Abstract: To polish polishing target surfaces of SiO2 insulating films or the like at a high rate without scratching the surface, the present invention provides an abrasive comprising a slurry comprising a medium and dispersed therein at least one of i) cerium oxide particles constituted of at least two crystallites and having crystal grain boundaries or having a bulk density of not higher than 6.5 g/cm3 and ii) abrasive grains having pores. Also provided are a method of polishing a target member and a process for producing a semiconductor device which make use of this abrasive.

Abstract translation: 本发明提供一种研磨剂，其包含含有介质的浆料，其中分散有i）至少一种，其中i） 由至少两个晶体构成并具有晶界或堆积密度不高于6.5g / cm 3的氧化铈颗粒和ii）具有孔的磨料颗粒。 还提供了一种抛光目标构件的方法以及利用该研磨剂制造半导体器件的方法。

公开(公告)号：US20050085168A1

公开(公告)日：2005-04-21

申请号：US10960941

申请日：2004-10-12

Applicant: Masato Yoshida ,  Toranosuke Ashizawa ,  Hiroki Terazaki ,  Yasushi Kurata ,  Jun Matsuzawa ,  Kiyohito Tanno ,  Yuuto Ootuki

Inventor： Masato Yoshida ,  Toranosuke Ashizawa ,  Hiroki Terazaki ,  Yasushi Kurata ,  Jun Matsuzawa ,  Kiyohito Tanno ,  Yuuto Ootuki

IPC: C09C1/68 ,  C09G1/02 ,  C09K3/14 ,  H01L21/304 ,  H01L21/3105 ,  H01L21/321 ,  B24D3/02 ,  B24B1/00

CPC classification number: C09K3/1463 ,  C01F17/0043 ,  C01P2004/61 ,  C01P2004/62 ,  C01P2006/12 ,  C09G1/02 ,  C09K3/1409 ,  H01L21/02024 ,  H01L21/02065 ,  H01L21/31053

Abstract: A cerium oxide abrasive slurry having, dispersed in a medium, cerium oxide particles whose primary particles have a median diameter of from 30 nm to 250 nm, a maximum particle diameter of 600 nm or smaller, and a specific surface area of from 7 to 45 m.2/g, and slurry particles have a median diameter of from 150 nm to 600 nm. The cerium oxide particles have structural parameter Y, representing an isotropic microstrain obtained by an X-ray Rietveld method (with RIETAN-94), of from 0.01 to 0.70, and structural parameter X, representing a primary particle diameter obtained by an X-ray Rietveld method (with RIETAN-94), of from 0.08 to 0.3. The cerium oxide abrasive slurry is made by a method of obtaining particles by firing at a temperature of from 600° C. to 900° C. and then pulverizing, then dispersing the resulting cerium oxide particles in a medium.

Abstract translation: 一种分散在介质中的氧化铈磨料浆料，其一次粒子的中值粒径为30nm〜250nm，最大粒径为600nm以下，比表面积为7〜45μm m 2 / g，浆料颗粒的中值粒径为150nm至600nm。 氧化铈颗粒具有结构参数Y，表示通过X射线Rietveld方法（用RIETAN-94）获得的各向同性微应变为0.01至0.70，结构参数X表示通过X射线获得的一次粒径 Rietveld法（含RIETAN-94）为0.08〜0.3。 通过在600℃〜900℃的温度下烧成而获得粒子的方法制造氧化铈研磨剂浆料，然后粉碎，然后将所得的氧化铈粒子分散在培养基中。

公开(公告)号：US06221118B1

公开(公告)日：2001-04-24

申请号：US09269650

申请日：1999-08-10

Applicant: Masato Yoshida ,  Toranosuke Ashizawa ,  Hiroki Terazaki ,  Yasushi Kurata ,  Jun Matsuzawa ,  Kiyohito Tanno ,  Yuuto Ootuki

Inventor： Masato Yoshida ,  Toranosuke Ashizawa ,  Hiroki Terazaki ,  Yasushi Kurata ,  Jun Matsuzawa ,  Kiyohito Tanno ,  Yuuto Ootuki

IPC: C09K314

CPC classification number: C09K3/1463 ,  C01F17/0043 ,  C01P2004/61 ,  C01P2004/62 ,  C01P2006/12 ,  C09G1/02 ,  C09K3/1409 ,  H01L21/02024 ,  H01L21/02065 ,  H01L21/31053

Abstract: This invention provides a cerium oxide abrasive with which the surfaces of substrates such as SiO2 insulating films can be polished at a high rate without causing scratches. The abrasive of the present invention comprises a slurry comprising cerium oxide particles whose primary particles have a diameter of from 10 nm to 600 nm and a median diameter of from 30 nm to 250 nm and slurry particles have a median diameter of from 150 nm to 600 nm and a maximum diameter of 3,000 nm or smaller, the cerium oxide particles being dispersed in a medium.

Abstract translation: 本发明提供一种氧化铈研磨剂，能够高速率地抛光SiO 2绝缘膜等基板的表面，而不产生划痕。 本发明的研磨剂包括包含氧化铈颗粒的浆料，其一次颗粒的直径为10nm至600nm，中值粒径为30nm至250nm，浆料颗粒的中值粒径为150nm至600nm nm，最大直径为3000nm以下，氧化铈粒子分散在介质中。

公开(公告)号：US20120227331A1

公开(公告)日：2012-09-13

申请号：US13411196

申请日：2012-03-02

Applicant: Masato YOSHIDA ,  Toranosuke Ashizawa ,  Hiroki Terazaki ,  Yuuto Ootuki ,  Yasushi Kurata ,  Jun Matsuzawa ,  Kiyohito Tanno

Inventor： Masato YOSHIDA ,  Toranosuke Ashizawa ,  Hiroki Terazaki ,  Yuuto Ootuki ,  Yasushi Kurata ,  Jun Matsuzawa ,  Kiyohito Tanno

IPC: C09G1/02

CPC classification number: C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  H01L21/31053

Abstract: To polish polishing target surfaces of SiO2 insulating films or the like at a high rate without scratching the surface, the present invention provides an abrasive comprising a slurry comprising a medium and dispersed therein at least one of i) cerium oxide particles constituted of at least two crystallites and having crystal grain boundaries or having a bulk density of not higher than 6.5 g/cm3 and ii) abrasive grains having pores. Also provided are a method of polishing a target member and a process for producing a semiconductor which make use of this abrasive.

Abstract translation: 为了在不刮擦表面的情况下以高速率抛光SiO 2绝缘膜等的抛光目标表面，本发明提供了一种研磨剂，其包含包含介质的浆料，并分散在其中的至少一种i）氧化铈颗粒，其至少由两个 微晶并且具有晶界或堆积密度不高于6.5g / cm 3，和ii）具有孔的磨料颗粒。 还提供了抛光目标构件的方法和利用该研磨剂制造半导体的方法。

公开(公告)号：US07867303B2

公开(公告)日：2011-01-11

申请号：US11276161

申请日：2006-02-16

Applicant: Masato Yoshida ,  Toranosuke Ashizawa ,  Hiroki Terazaki ,  Yasushi Kurata ,  Jun Matsuzawa ,  Kiyohito Tanno ,  Yuuto Ootuki

Inventor： Masato Yoshida ,  Toranosuke Ashizawa ,  Hiroki Terazaki ,  Yasushi Kurata ,  Jun Matsuzawa ,  Kiyohito Tanno ,  Yuuto Ootuki

IPC: B24D3/02 ,  C09C1/68 ,  C09K3/14 ,  C09G1/02 ,  B24B1/00 ,  B24B7/19

CPC classification number: C09K3/1463 ,  C01F17/0043 ,  C01P2004/61 ,  C01P2004/62 ,  C01P2006/12 ,  C09G1/02 ,  C09K3/1409 ,  H01L21/02024 ,  H01L21/02065 ,  H01L21/31053

Abstract: A cerium oxide abrasive slurry having, dispersed in a medium, cerium oxide particles whose primary particles have a median diameter of from 30 nm to 250 nm, a maximum particle diameter of 600 nm or smaller, and a specific surface area of from 7 to 45 m.2/g, and slurry particles have a median diameter of from 150 nm to 600 nm. The cerium oxide particles have structural parameter Y, representing an isotropic microstrain obtained by an X-ray Rietveld method (with RIETAN-94), of from 0.01 to 0.70, and structural parameter X, representing a primary particle diameter obtained by an X-ray Rietveld method (with RIETAN-94), of from 0.08 to 0.3. The cerium oxide abrasive slurry is made by a method of obtaining particles by firing at a temperature of from 600° C. to 900° C. and then pulverizing, then dispersing the resulting cerium oxide particles in a medium.

Abstract translation: 一种分散在介质中的氧化铈磨料浆料，其一次粒子的中值粒径为30nm〜250nm，最大粒径为600nm以下，比表面积为7〜45μm m.2 / g，浆料颗粒的中值粒径为150nm〜600nm。 氧化铈颗粒具有结构参数Y，表示通过X射线Rietveld方法（用RIETAN-94）获得的各向同性微应变为0.01至0.70，结构参数X表示通过X射线获得的一次粒径 Rietveld法（含RIETAN-94）为0.08〜0.3。 通过在600℃〜900℃的温度下烧成而获得粒子的方法制造氧化铈研磨剂浆料，然后粉碎，然后将所得的氧化铈粒子分散在培养基中。

公开(公告)号：US08616936B2

公开(公告)日：2013-12-31

申请号：US13411196

申请日：2012-03-02

Applicant: Masato Yoshida ,  Toranosuke Ashizawa ,  Hiroki Terazaki ,  Yuuto Ootuki ,  Yasushi Kurata ,  Jun Matsuzawa ,  Kiyohito Tanno

Inventor： Masato Yoshida ,  Toranosuke Ashizawa ,  Hiroki Terazaki ,  Yuuto Ootuki ,  Yasushi Kurata ,  Jun Matsuzawa ,  Kiyohito Tanno

IPC: B24B1/00

CPC classification number: C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  H01L21/31053

Abstract: To polish polishing target surfaces of SiO2 insulating films or the like at a high rate without scratching the surface, the present invention provides an abrasive comprising a slurry comprising a medium and dispersed therein at least one of i) cerium oxide particles constituted of at least two crystallites and having crystal grain boundaries or having a bulk density of not higher than 6.5 g/cm3 and ii) abrasive grains having pores. Also provided are a method of polishing a target member and a process for producing a semiconductor which make use of this abrasive.

Abstract translation: 为了在不刮擦表面的情况下以高速率抛光SiO 2绝缘膜等的抛光目标表面，本发明提供了一种研磨剂，其包含包含介质的浆料，并分散在其中至少一个i）氧化铈颗粒，其由至少两个 微晶并且具有晶界或堆积密度不高于6.5g / cm 3，和ii）具有孔的磨料颗粒。 还提供了抛光目标构件的方法和利用该研磨剂制造半导体的方法。

公开(公告)号：US20110312251A1

公开(公告)日：2011-12-22

申请号：US13217447

申请日：2011-08-25

Applicant: Masato Yoshida ,  Toranosuke Ashizawa ,  Hiroki Terazaki ,  Yuuto Ootuki ,  Yasushi Kurata ,  Jun Matsuzawa ,  Kiyohito Tanno

Inventor： Masato Yoshida ,  Toranosuke Ashizawa ,  Hiroki Terazaki ,  Yuuto Ootuki ,  Yasushi Kurata ,  Jun Matsuzawa ,  Kiyohito Tanno

IPC: B24B1/00

CPC classification number: C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  H01L21/31053

Abstract: To polish polishing target surfaces of SiO2 insulating films or the like at a high rate without scratching the surface, the present invention provides an abrasive comprising a slurry comprising a medium and dispersed therein at least one of i) cerium oxide particles constituted of at least two crystallites and having crystal grain boundaries or having a bulk density of not higher than 6.5 g/cm3 and ii) abrasive grains having pores. Also provided are a method of polishing a target member and a process for producing a semiconductor device which make use of this abrasive.

Abstract translation: 为了在不刮擦表面的情况下以高速率抛光SiO 2绝缘膜等的抛光目标表面，本发明提供了一种研磨剂，其包含包含介质的浆料，并分散在其中至少一个i）氧化铈颗粒，其由至少两个 微晶并且具有晶界或堆积密度不高于6.5g / cm 3，和ii）具有孔的磨料颗粒。 还提供了一种抛光目标构件的方法以及利用该研磨剂制造半导体器件的方法。

公开(公告)号：US07963825B2

公开(公告)日：2011-06-21

申请号：US12170587

申请日：2008-07-10

Applicant: Masato Yoshida ,  Toranosuke Ashizawa ,  Hiroki Terazaki ,  Yuuto Ootuki ,  Yasushi Kurata ,  Jun Matsuzawa ,  Kiyohito Tanno

Inventor： Masato Yoshida ,  Toranosuke Ashizawa ,  Hiroki Terazaki ,  Yuuto Ootuki ,  Yasushi Kurata ,  Jun Matsuzawa ,  Kiyohito Tanno

IPC: B24B7/30

CPC classification number: C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  H01L21/31053

Abstract: To polish polishing target surfaces of SiO2 insulating films or the like at a high rate without scratching the surface, the present invention provides an abrasive comprising a slurry comprising a medium and dispersed therein at least one of i) cerium oxide particles constituted of at least two crystallites and having crystal grain boundaries or having a bulk density of not higher than 6.5 g/cm3 and ii) abrasive grains having pores. Also provided are a method of polishing a target member and a process for producing a semiconductor device which make use of this abrasive.

公开(公告)号：US20060248804A1

公开(公告)日：2006-11-09

申请号：US11484611

申请日：2006-07-12

Applicant: Masato Yoshida ,  Toranosuke Ashizawa ,  Hiroki Terazaki ,  Yuuto Ootuki ,  Yasushi Kurata ,  Jun Matsuzawa ,  Kiyohito Tanno

Inventor： Masato Yoshida ,  Toranosuke Ashizawa ,  Hiroki Terazaki ,  Yuuto Ootuki ,  Yasushi Kurata ,  Jun Matsuzawa ,  Kiyohito Tanno

IPC: B24B7/30

CPC classification number: C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  H01L21/31053

Abstract: To polish polishing target surfaces of SiO2 insulating films or the like at a high rate without scratching the surface, the present invention provides an abrasive comprising a slurry comprising a medium and dispersed therein at least one of i) cerium oxide particles constituted of at least two crystallites and having crystal grain boundaries or having a bulk density of not higher than 6.5 g/cm3 and ii) abrasive grains having pores. Also provided are a method of polishing a target member and a process for producing a semiconductor device which make use of this abrasive.

Abstract translation: 本发明提供一种研磨剂，其包含含有介质的浆料，其中分散有i）至少一种，其中i） 由至少两个晶体构成并具有晶界或堆积密度不高于6.5g / cm 3的氧化铈颗粒和ii）具有孔的磨料颗粒。 还提供了一种抛光目标构件的方法以及利用该研磨剂制造半导体器件的方法。

公开(公告)号：US06420269B2

公开(公告)日：2002-07-16

申请号：US08930916

申请日：1997-12-30

Applicant: Jun Matsuzawa ,  Yasushi Kurata ,  Kiyohito Tanno ,  Yoshio Honma

Inventor： Jun Matsuzawa ,  Yasushi Kurata ,  Kiyohito Tanno ,  Yoshio Honma

IPC: H01L21302

CPC classification number: C09K3/1463 ,  C01F17/0043 ,  C01P2006/12 ,  H01L2224/32245 ,  H01L2224/4826 ,  H01L2224/73215 ,  H01L2924/12044 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012

Abstract: The invention relates to an abrasive containing a slurry of the cerium oxide grains dispersed in water. The Cerium oxide grains are obtained by adding hydrogen peroxide to an aqueous dispersion of cerium carbonate. The Cerium oxide grains are obtained by oxidizing a precipitate, which is formed through addition of ammonium hydrogencarbonate to an aqueous solution of cerium nitrate, with hydrogen peroxide. The Cerium oxide grains are obtained by neutralizing or alkallfying an aqueous solution of cerium ammonium nitrate.

Abstract translation: 本发明涉及含有分散在水中的氧化铈颗粒的浆料的磨料。 通过向碳酸铈的水分散液中加入过氧化氢来获得氧化铈颗粒。 通过将通过将碳酸氢铵加入到硝酸铈水溶液中形成的沉淀物与过氧化氢氧化来获得氧化铈颗粒。 氧化铈颗粒通过中和硝酸铈铵水溶液而得到。