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    Laser processing apparatus
    1.
    发明授权
    Laser processing apparatus 有权

    公开(公告)号：US12202078B2

    公开(公告)日：2025-01-21

    申请号：US17545982

    申请日：2021-12-08

    Applicant: Samsung Display Co., Ltd.

    Inventor： Kyu-Bum Kim ,  Jaeseok Park ,  Jungseob Lee ,  Kyongho Hong ,  Inho Lee ,  Bosuck Jeon

    IPC: B23K37/04 ,  B23K26/02 ,  B23K26/362

    Abstract: A laser processing apparatus includes a stage configured to transfer a target substrate and including an opening, an electrostatic chuck disposed on the stage and including a plurality of holes, and a laser irradiation unit disposed above the stage and spaced apart from the stage and configured to irradiate a laser beam on the target substrate. A surface of the electrostatic chuck is in contact with the target substrate, the target substrate includes a plurality of etching regions to be etched by the laser beam and a non-etching region surrounding the plurality of etching regions of the target substrate, and the plurality of holes of the electrostatic chuck overlap the opening of the stage and the plurality of etching regions of the target substrate.

    Film cutting apparatus
    2.
    发明授权
    Film cutting apparatus 有权

    公开(公告)号：US12151311B2

    公开(公告)日：2024-11-26

    申请号：US17395737

    申请日：2021-08-06

    Applicant: NPS CO., LTD.

    Inventor： Seong Ho Bae

    IPC: B23K26/364 ,  B23K26/02 ,  B23K26/38 ,  B23K37/04 ,  B23K103/00 ,  B23K103/16

    Abstract: Disclosed is a film cutting apparatus for cutting a film fabric having a multilayer structure with a plurality of film layers and including a release film layer positioned at an outermost layer of one side of the film layers, the film cutting apparatus including a laser unit including a laser head configured to form a first cutting line on a predetermined first film group by cutting the first film group by selectively irradiating the first film group with a laser beam to include some film layers except for the release film layer among the film layers, and a cutting unit including a cutter configured to form a single cutting line by connecting a second cutting line and the first cutting line on a predetermined second film group by cutting the second film group using a cutting blade to include some film layers including at least the release film layer among the film layers.

    Laser welding method and laser welding device
    7.
    发明授权
    Laser welding method and laser welding device 有权

    公开(公告)号：US11203086B2

    公开(公告)日：2021-12-21

    申请号：US14762749

    申请日：2014-02-13

    Applicant: Nissan Motor Co., Ltd.

    Inventor： Keisuke Kinoshita ,  Kazuhiko Kagiya ,  Mitsuhiro Hasunuma ,  Shintaro Nonaka

    IPC: B23K26/34 ,  B23K26/20 ,  B23K26/00 ,  B23K26/02 ,  B23K26/22 ,  B23K26/60 ,  B23K26/244 ,  B23K103/04 ,  B23K101/34 ,  B23K103/08 ,  B23K103/00

    Abstract: A laser welding method includes a pretreatment process and a welding process. At least one metal member of the plurality of metal members is formed from a metal-plated steel plate in which a base metal has been covered with a coating material that has a melting point lower than the base metal. In the pretreatment process, with the position of the first metal member in the in-plane direction fixed, processing is performed from the front surface of the first metal member to form on the back surface, a protrusion that bulges from the back surface. Then, in the welding process, the first metal member in which a protrusion has been formed is superposed on a second metal member with the protrusion therebetween while maintaining the position in the in-plane direction, and laser light is irradiated on the superposed region to weld the plurality of metal members to each other.

    WAFER PROCESSING METHOD
    8.
    发明申请
    WAFER PROCESSING METHOD 有权

    公开(公告)号：US20210265209A1

    公开(公告)日：2021-08-26

    申请号：US17168333

    申请日：2021-02-05

    Applicant: DISCO CORPORATION

    Inventor： Masaru NAKAMURA

    IPC: H01L21/78 ,  H01L23/544 ,  B23K26/02 ,  B23K26/08

    Abstract: Provided is a wafer processing method for dividing a wafer having devices formed on a front side thereof into individual device chips, the front side being partitioned by a plurality of crossing division lines having a testing metal pattern formed in part thereof into a plurality of regions where the respective devices are formed. The method includes a first modified layer forming step of applying a laser beam of a wavelength having a transmitting property to the wafer with a focal point of the laser beam positioned inside the wafer at a first depth from the back side, thereby forming a first modified layer along a division line, and a second modified layer forming step of applying the laser beam with the focal point positioned at a second depth shallower than the first depth, thereby forming a second modified layer along the same division line.

    Wafer processing method
    10.
    发明授权
    Wafer processing method 有权

    公开(公告)号：US10790192B2

    公开(公告)日：2020-09-29

    申请号：US16375010

    申请日：2019-04-04

    Applicant: DISCO CORPORATION

    Inventor： Yoshiteru Nishida ,  Hidekazu Iida ,  Susumu Yokoo ,  Hiroyuki Takahashi ,  Kenta Chito

    IPC: H01L21/78 ,  H01L21/683 ,  H01L21/67 ,  H01L21/304 ,  B23K26/02 ,  B23K26/40 ,  H01L21/02 ,  B23K103/00

    Abstract: A method for processing a wafer in which patterns including a metal layer are formed on streets. The method includes: a step of applying a laser beam along the streets formed with the patterns to form laser processed grooves while removing the patterns; a step of forming cut grooves having a depth in excess of a finished thickness of the wafer, inside the laser processed grooves; a step of grinding the back surface side of the wafer to thin the wafer to the finished thickness and to expose the cut grooves to the back surface of the wafer, thereby dividing the wafer into a plurality of device chips; a step of removing a crushed layer formed on the back surface side of the wafer; and a step of forming a strain layer on the back surface side of the wafer by plasma processing using an inert gas.

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