公开(公告)号：US06348241B2

公开(公告)日：2002-02-19

申请号：US09300290

申请日：1999-04-27

申请人： Catherine Ronge ,  Daniel Boucheron ,  Roberto Frande

发明人： Catherine Ronge ,  Daniel Boucheron ,  Roberto Frande

IPC分类号： B05D306

CPC分类号： B08B9/0804 ,  B08B7/0042 ,  Y10S148/073 ,  Y10S148/093

摘要： The method for treating the internal surface of a gas bottle includes the following steps: a) an incident laser treatment beam is introduced into a bottle through its mouth, approximately along the axis of the bottle; b) the laser beam is deflected in the bottle onto the internal surface of the bottle; c) a relative rotation between the bottle and the deflected laser beam is made approximately about the axis of the bottle; and d) a relative displacement between the bottle and the deflected laser beam is made so as to scan most of the internal surface of the bottle with the deflected laser beam. The apparatus for treating a bottle is designed to implement the steps of the method.

摘要翻译： 用于处理气瓶内表面的方法包括以下步骤：a）入射的激光治疗束通过其嘴部大致沿瓶的轴线引入瓶中; b）激光束在瓶中偏转 到瓶子的内表面上; c）瓶子和偏转的激光束之间的相对旋转大致围绕瓶的轴线; 并且，使得瓶和偏转的激光束之间的相对位移被制成以便用偏转的激光束扫描瓶的大部分内表面。用于处理瓶子的装置被设计成实现该方法的步骤。

公开(公告)号：US5510645A

公开(公告)日：1996-04-23

申请号：US383908

申请日：1995-01-17

申请人： Jon T. Fitch ,  Papu Maniar ,  Keith E. Witek ,  Jerry Gelatos ,  Reza Moazzami ,  Sergio A. Ajuria

发明人： Jon T. Fitch ,  Papu Maniar ,  Keith E. Witek ,  Jerry Gelatos ,  Reza Moazzami ,  Sergio A. Ajuria

IPC分类号： G01P15/08 ,  H01L21/768 ,  H01L23/482 ,  H01L29/00

CPC分类号： G01P15/0802 ,  H01L21/7682 ,  H01L23/4821 ,  H01L2924/0002 ,  Y10S148/073

摘要： A method for forming an air region or an air bridge overlying a base layer (12). Air regions (20a, 20b, 28a, and 48) are formed overlying the base layer (12) to provide for improved dielectric isolation of adjacent conductive layers, provide air-isolated conductive interconnects, and/or form many other microstructures or microdevices. The air regions (20a, 20b, 28a, and 48) are formed by either selectively removing a sacrificial spacer (16a and 16b) or by selectively removing a sacrificial layer (28, 40). The air regions (20a, 20b, 28a, and 48) are sealed, enclosed, or isolated by either a selective growth process or by a non-conformal deposition technique. The air regions (20a, 20b, 28a, and 48) may be formed under any pressure, gas concentration, or processing condition (i.e. temperature, etc.). The air regions (20a, 20b, 28a, and 48) may be formed at any level within an integrated circuit.

摘要翻译： 一种用于形成覆盖在基底层（12）上的空气区域或空气桥的方法。 空气区域（20a，20b，28a和48）形成在基底层（12）上，以提供相邻导电层的改进的介电隔离，提供空气隔离的导电互连和/或形成许多其它微结构或微器件。 通过选择性地去除牺牲隔离物（16a和16b）或通过选择性地除去牺牲层（28,40）来形成空气区域（20a，20b，28a和48）。 空气区域（20a，20b，28a和48）通过选择性生长过程或通过非保形沉积技术被密封，封闭或隔离。 空气区域（20a，20b，28a和48）可以在任何压力，气体浓度或加工条件（即温度等）下形成。 空气区域（20a，20b，28a和48）可以形成在集成电路内的任何水平处。

公开(公告)号：US5059556A

公开(公告)日：1991-10-22

申请号：US494828

申请日：1990-03-16

申请人： Duane T. Wilcoxen

发明人： Duane T. Wilcoxen

IPC分类号： B81B3/00 ,  G01F1/684 ,  G01L9/00 ,  H01L21/3205

CPC分类号： B81B3/0072 ,  G01F1/6845 ,  G01L9/0042 ,  H01L21/32053 ,  B81C2201/0167 ,  Y10S148/073 ,  Y10S148/159

摘要： Method for relieving stress in silicon microstructures by forming a silicide on the microstructures. Sensors comprising a stress-relieved silicon microstructure are also described.

摘要翻译： 通过在微结构上形成硅化物来缓解硅微结构中的应力的方法。 还描述了包括应力释放的硅微结构的传感器。

公开(公告)号：US3899557A

公开(公告)日：1975-08-12

申请号：US41075873

申请日：1973-10-29

申请人： SIEMENS AG

发明人： DIETZE WOLFGANG

IPC分类号： C01B33/02 ,  C01B33/027 ,  C23C16/01 ,  C23C16/22 ,  C23C16/44 ,  C30B29/60 ,  C30B31/10 ,  H01L21/22 ,  C23C11/06

CPC分类号： C23C16/01 ,  C23C16/22 ,  C30B31/10 ,  Y10S148/007 ,  Y10S148/025 ,  Y10S148/073 ,  Y10S264/57

摘要： Hollow semiconductor bodies having an outer surface composed of a doped semiconductor material and an inner surface composed of a pure semiconductor material are formed by sequential deposition from a gaseous thermally decomposable semiconductor compound onto a heated carrier member. The multi-layer hollow semiconductor bodies are directly heatable during diffusion of dopants into semiconductor elements.

摘要翻译： 通过从气态热分解半导体化合物到加热的载体构件的顺序沉积，形成具有由掺杂半导体材料构成的外表面和由纯半导体材料组成的内表面的空心半导体本体。 多层中空半导体体在掺杂剂扩散到半导体元件期间是可直接加热的。

公开(公告)号：US3867497A

公开(公告)日：1975-02-18

申请号：US34580573

申请日：1973-03-28

申请人： WACKER CHEMITRONIC

发明人： TEICH HORST ,  GOPPINGER ALOIS

IPC分类号： C01B33/02 ,  C01B33/027 ,  C23C16/01 ,  C23C16/24 ,  C23C16/44 ,  H01L21/205 ,  H01L21/22 ,  B01J17/28 ,  B29C13/04

CPC分类号： C23C16/01 ,  C23C16/24 ,  Y10S148/025 ,  Y10S148/073 ,  Y10S148/122

摘要： Process for making semi-conducting hollow bodies by thermal splitting of volatile semi-conducting silicon compounds comprising passing the volatile silicon compounds over a carbon mold or a carbon-coated mold, and depositing thereon in three successive stages, SiO2, amorphous silicon, and polycrystalline silicon by adjustment of the temperature in each stage, and, after cooling, lifting the polycrystalline silicon body off the mold. The invention also comprises the polycrystalline Si body so made.

摘要翻译： 通过热分解挥发性半导体硅化合物制造半导体中空体的方法，包括使挥发性硅化合物通过碳模或碳涂覆的模具，并在其上沉积三个阶段，SiO 2，非晶硅和多晶 通过调节各阶段的温度，并且在冷却之后将多晶硅体从模具上提起。 本发明还包括如此制成的多晶Si体。

公开(公告)号：US3226254A

公开(公告)日：1965-12-28

申请号：US20052562

申请日：1962-06-06

申请人： SIEMENS AG

发明人： KONRAD REUSCHEL

IPC分类号： C30B23/00 ,  C30B25/12 ,  C30B35/00 ,  H01L21/00 ,  H01L21/205

CPC分类号： C30B25/12 ,  C30B23/00 ,  C30B35/00 ,  H01L21/00 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02546 ,  H01L21/0262 ,  Y10S148/067 ,  Y10S148/071 ,  Y10S148/072 ,  Y10S148/073

公开(公告)号：US20020125257A1

公开(公告)日：2002-09-12

申请号：US10024005

申请日：2001-12-21

发明人： Catherine Ronge ,  Daniel Boucheron ,  Roberto Frande

IPC分类号： F17C001/00 ,  C08J007/18 ,  G21H005/00 ,  B05B005/025

CPC分类号： B08B9/0804 ,  B08B7/0042 ,  Y10S148/073 ,  Y10S148/093

摘要： The method for treating the internal surface of a gas bottle includes the following steps: a) an incident laser treatment beam is introduced into a bottle through its mouth, approximately along the axis of the bottle; b) the laser beam is deflected in the bottle onto the internal surface of the bottle; c) a relative rotation between the bottle and the deflected laser beam is made approximately about the axis of the bottle; and d) a relative displacement between the bottle and the deflected laser beam is made so as to scan most of the internal surface of the bottle with the deflected laser beam. The apparatus for treating a bottle is designed to implement the steps of the method.

摘要翻译： 用于处理气瓶内表面的方法包括以下步骤：a）将入射的激光治疗束通过其嘴部大致沿瓶的轴线引入瓶中; b）激光束在瓶子中偏转到瓶子的内表面上; c）瓶和偏转的激光束之间的相对旋转大致围绕瓶的轴线; 并且d）瓶和偏转的激光束之间的相对位移被制成以便用偏转的激光束扫描瓶的大部分内表面。 用于处理瓶子的装置被设计成实现该方法的步骤。

公开(公告)号：US5661049A

公开(公告)日：1997-08-26

申请号：US609256

申请日：1996-02-29

申请人： Water Lur ,  Edward Houn

发明人： Water Lur ,  Edward Houn

IPC分类号： H01L21/308 ,  H01L21/311 ,  H01L21/336 ,  H01L21/762 ,  H01L21/763

CPC分类号： H01L29/6659 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/76229 ,  H01L21/763 ,  H01L29/6656 ,  Y10S148/073 ,  Y10S257/90 ,  Y10S438/938

摘要： A new method of trench isolation incorporating thermal stress releasing voids is described. Two sets of narrow trenches are etched into the silicon substrate not covered by a photoresist mask wherein the second set of trenches alternate with the first set of trenches. The first set of trenches is filled with an insulating layer. A second insulating layer is deposited over the surface of the substrate and within the second set of trenches wherein said insulating layer has step coverage such that voids are formed and are completely enclosed within the second set of trenches completing the thermal stress releasing device isolation of the integrated circuit. The method of forming thermal stress released polysilicon gate spacers in an integrated circuit is described. Polysilicon gate electrodes are formed on the surface of the semiconductor substrate. Sucessive sidewalls are formed on the gate electrodes of thin silicon dioxide, silicon nitride, and silicon dioxide. The silicon nitride spacers are removed leaving trenches between the thin silicon dioxide sidewalls and the silicon dioxide spacers. A thin insulating material is deposited over the surface of the gate electrodes and the sidewalls with a step coverage such that the trenches between the thin oxidation and the silicon dioxide spacers are not filled by the thin insulating layer but are covered by the thin insulating layer leaving voids which complete the thermal stress released polysilicon gate spacer formation in the fabrication of an integrated circuit.

摘要翻译： 描述了一种结合热应力释放空隙的新型沟槽隔离方法。 将两组窄沟槽蚀刻到未被光致抗蚀剂掩模覆盖的硅衬底中，其中第二组沟槽与第一组沟槽交替。 第一组沟槽填充有绝缘层。 第二绝缘层沉积在衬底的表面上并在第二组沟槽内，其中所述绝缘层具有阶梯覆盖，使得形成空隙并完全封闭在第二组沟槽内，从而完成热应力释放装置的隔离 集成电路。 描述了在集成电路中形成热应力释放多晶硅栅极间隔物的方法。 多晶硅栅电极形成在半导体衬底的表面上。 在薄二氧化硅，氮化硅和二氧化硅的栅电极上形成过多的侧壁。 去除氮化硅间隔物，留下薄二氧化硅侧壁和二氧化硅间隔物之间​​的沟槽。 薄的绝缘材料沉积在栅电极和侧壁的表面上，具有台阶覆盖，使得薄氧化物和二氧化硅间隔物之间​​的沟槽不被薄绝缘层填充，但被薄绝缘层覆盖，离开 完成热应力的空隙在集成电路的制造中释放多晶硅栅极间隔物的形成。

公开(公告)号：US5350702A

公开(公告)日：1994-09-27

申请号：US38940

申请日：1993-03-29

申请人： Seok T. Kim

发明人： Seok T. Kim

IPC分类号： H01L29/80 ,  H01L21/338 ,  H01L29/06 ,  H01L29/10 ,  H01L29/812 ,  H01L21/265

CPC分类号： H01L29/66886 ,  H01L29/0649 ,  H01L29/1029 ,  H01L29/8124 ,  Y10S148/073

摘要： A dual gate metal semiconductor field effect transistor is disclosed which comprises a semi-insulating compound semiconductor substrate, a first and a second insulating layer in stripe pattern in different width formed on said semiconductor substrate at a predetermined angle against the direction, a first semiconductor layer having a first and a second voids on said first and second insulating layers in stripe pattern, a second semiconductor layer subsequently formed to said first semiconductor layer, source and drain regions having impurities partially diffused to said first and second semiconductor layers, a first and a second gate electrodes formed in different width on said second semiconductor layer positioned corresponding to said first and second insulating layers in stripe pattern, source and drain electrodes formed on said source and drain regions. With such a construction, by forming the void at the lower part of the conductive layer by using the selective MOCVD according to the crystal orientation of the substrate, the conductive thickness can be adjusted, so that recess etching is not required therefor. In addition, leakage current can be prevented without forming the buffer layer of high purity requiring a high resistance as in the conventional technique for the semiconductor substrate and conductive layer, and properties of low noise and high gain is obtained.

摘要翻译： 公开了一种双栅极金属半导体场效应晶体管，其包括半绝缘化合物半导体衬底，以相对于<＆lt; 1>方向以预定角度形成在所述半导体衬底上的不同宽度的条纹图案的第一和第二绝缘层， 在所述第一和第二绝缘层上具有条纹图案的第一和第二空隙的第一半导体层，随后形成于所述第一半导体层的第二半导体层，具有部分扩散到所述第一和第二半导体层的杂质的源区和漏区， 形成在所述第二半导体层上的不同宽度的第一和第二栅电极，其对应于形成在所述源极和漏极区上的条纹图案中的所述第一和第二绝缘层，源电极和漏电极。 通过这样的结构，通过使用根据基板的晶体取向的选择性MOCVD在导电层的下部形成空隙，可以调节导电厚度，从而不需要凹槽蚀刻。 此外，如在半导体衬底和导电层的传统技术中那样，可以防止漏电流而不形成需要高电阻的高纯度缓冲层，并且获得低噪声和高增益的特性。

公开(公告)号：US3962670A

公开(公告)日：1976-06-08

申请号：US530667

申请日：1974-12-09

申请人： Wolfgang Dietze

发明人： Wolfgang Dietze

IPC分类号： C23C16/01 ,  C23C16/22 ,  C30B31/10 ,  H01C13/00

CPC分类号： C23C16/01 ,  C23C16/22 ,  C30B31/10 ,  Y10S118/90 ,  Y10S148/073 ,  Y10S148/122 ,  Y10T428/13 ,  Y10T428/2975

摘要： Hollow semiconductor bodies having an outer surface composed of a doped semiconductor material and an inner surface composed of a pure semiconductor material are formed by sequential deposition from a gaseous thermally decomposable semiconductor compound onto a heated carrier member. The multi-layer hollow semiconductor bodies are directly heatable during diffusion of dopants into semiconductor elements.

摘要翻译： 通过从气态热分解半导体化合物到加热的载体构件的顺序沉积，形成具有由掺杂半导体材料构成的外表面和由纯半导体材料组成的内表面的空心半导体本体。 多层中空半导体体在掺杂剂扩散到半导体元件期间是可直接加热的。