公开(公告)号：US20190190490A1

公开(公告)日：2019-06-20

申请号：US16210703

申请日：2018-12-05

Applicant: Infineon Technologies AG

Inventor： Ruediger Bauder ,  Andreas Bogner ,  Hans-Joerg Timme

IPC: H03H9/54 ,  H03H9/02 ,  H03H9/205 ,  H03H7/01

CPC classification number: H03H9/542 ,  H01L41/187 ,  H03F3/19 ,  H03F3/21 ,  H03F2200/222 ,  H03F2200/294 ,  H03F2200/451 ,  H03F2203/21157 ,  H03H3/02 ,  H03H7/0115 ,  H03H7/0153 ,  H03H7/0161 ,  H03H7/12 ,  H03H7/1741 ,  H03H7/463 ,  H03H9/0004 ,  H03H9/02007 ,  H03H9/02015 ,  H03H9/02031 ,  H03H9/0547 ,  H03H9/175 ,  H03H9/205 ,  H03H9/48 ,  H03H9/52 ,  H03H9/54 ,  H03H9/547 ,  H03H9/584 ,  H03H9/585 ,  H03H9/587 ,  H03H9/588 ,  H03H9/589 ,  H03H9/60 ,  H03H9/605 ,  H03H9/6479 ,  H03H9/66 ,  H03H9/70 ,  H03H11/1291 ,  H03H2007/013 ,  H03H2009/02204 ,  H03H2210/025 ,  H03H2210/026 ,  H03J1/0008 ,  H03J3/20 ,  H04B1/0057 ,  H04B1/006 ,  H04B1/0475 ,  H04B1/10 ,  H04B1/1036 ,  H04B1/18 ,  H04B1/40 ,  H04B1/50 ,  H04B1/525

Abstract: A notch filter includes an inductor coupled between an input node and an output node, and a dual-resonator structure coupled between the input node, the output node, and ground.

公开(公告)号：US20190190483A1

公开(公告)日：2019-06-20

申请号：US16281359

申请日：2019-02-21

Applicant: Avago Technologies International Sales Pte.Limited

Inventor： Brice Ivira ,  John D. Larson, III ,  Robert Thalhammer ,  Klaus-Guenter Oppermann

IPC: H03H9/02 ,  H03H9/60 ,  H03H9/58 ,  H03H9/17 ,  H03H9/13

CPC classification number: H03H9/02086 ,  H03H9/02118 ,  H03H9/132 ,  H03H9/173 ,  H03H9/175 ,  H03H9/587 ,  H03H9/589 ,  H03H9/605

Abstract: A bulk acoustic wave (BAW) resonator includes: an acoustic reflector disposed in a substrate; a lower electrode disposed over the acoustic reflector; a piezoelectric layer disposed over the lower electrode; and an upper electrode disposed over the piezoelectric layer. A contacting overlap of the lower electrode, the piezoelectric layer and the upper electrode over the acoustic reflector comprising an active area of the BAW resonator. An opening exists in the upper electrode in a region of the BAW resonator susceptible to unacceptable overheating.

公开(公告)号：US09438202B2

公开(公告)日：2016-09-06

申请号：US14040163

申请日：2013-09-27

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Inventor： Alexandre Reinhardt ,  Julie Abergel ,  Jean-Baptiste David

IPC: H03H9/15 ,  H03H9/54 ,  H03H9/52 ,  H03H3/04 ,  H03H9/05 ,  H03H9/17 ,  H03H9/58 ,  H03H9/02

CPC classification number: H03H9/54 ,  H03H3/04 ,  H03H9/0542 ,  H03H9/175 ,  H03H9/542 ,  H03H9/585 ,  H03H9/589 ,  H03H2009/02188 ,  H03H2009/02204

Abstract: An acoustic structure, comprising at least one acoustic resonator exhibiting at least one resonant frequency in a band of operating frequencies and an integrated capacitor, further comprises: a stack of layers, comprising at least one active layer of piezoelectric material or of ferroelectric material; the resonator being frequency tunable and being produced by a first subset of layers of the stack comprising the at least one active layer and at least two electrodes; the integrated capacitor being produced by a second subset of layers comprising the active layer and at least two electrodes; the first and second subsets of layers being distinguished by a modification of layers so as to exhibit different resonant frequencies.

Abstract translation: 一种声学结构，包括至少一个在工作频率带内呈现至少一个谐振频率的声谐振器和集成电容器，还包括：一叠层，包括至少一个压电材料的有源层或铁电材料; 所述谐振器是频率可调谐的并且由包括所述至少一个有源层和至少两个电极的所述堆叠的第一层子集产生; 所述集成电容器由包括所述有源层和至少两个电极的第二子层子集产生; 通过层的修改来区分第一和第二层子集，以便表现出不同的谐振频率。

公开(公告)号：US20160164489A1

公开(公告)日：2016-06-09

申请号：US14934619

申请日：2015-11-06

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Jea Shik SHIN ,  Sang Uk SON ,  Duck Hwan KIM

IPC: H03H9/58 ,  H03H9/02 ,  H03H9/17

CPC classification number: H03H9/173 ,  H03H9/02102 ,  H03H9/175 ,  H03H9/587 ,  H03H9/589 ,  H03H2003/021

Abstract: A bulk acoustic wave resonator and a filter in which partial thicknesses of protection layers or reflection layers thereof are differently formed are provided. The bulk acoustic wave resonator includes a bulk acoustic wave resonating part comprising a piezoelectric layer, and a reflection layer configured to reflect waves of a resonance frequency generated by the piezoelectric layer based on a signal applied to the bulk acoustic wave resonating part. A thickness of a portion of the reflection layer is different from a thickness of a remaining portion thereof.

Abstract translation: 提供一种体声波谐振器和其中保护层或其反射层的部分厚度不同地形成的滤光器。 体声波谐振器包括：基于施加到体声波谐振部分的信号的包括压电层的体声波谐振部分和被配置为反射由压电层产生的谐振频率的波的反射层。 反射层的一部分的厚度与其剩余部分的厚度不同。

公开(公告)号：US20150333727A1

公开(公告)日：2015-11-19

申请号：US14653829

申请日：2012-12-21

Applicant: EPCOS AG

Inventor： Gilles Moulard ,  Paul Muralt ,  Ramin Matloub

IPC: H03H9/02 ,  H03H3/02 ,  H01L41/187 ,  H01L41/332 ,  H01L41/29 ,  H01L41/314

CPC classification number: H03H3/04 ,  H01L41/187 ,  H01L41/29 ,  H01L41/314 ,  H01L41/332 ,  H03H3/02 ,  H03H9/02015 ,  H03H9/589 ,  H03H2003/0435 ,  H03H2003/0471

Abstract: A MEMS component includes a lower electrode. The MEMS component also includes an upper electrode. The upper electrode overlies the lower electrode. The MEMS component also includes a first piezoelectric layer between the lower electrode and the upper electrode. The first piezoelectric layer has a first piezoelectric material comprising AlN and Sc.

Abstract translation: MEMS部件包括下电极。 MEMS组件还包括上电极。 上电极覆盖下电极。 MEMS部件还包括在下电极和上电极之间的第一压电层。 第一压电层具有包含AlN和Sc的第一压电材料。

公开(公告)号：US08869363B2

公开(公告)日：2014-10-28

申请号：US12961593

申请日：2010-12-07

Applicant: Takashi Miyake

Inventor： Takashi Miyake

IPC: H03H3/04 ,  H01L41/04 ,  H03H9/58 ,  H01L41/27 ,  H01L41/083 ,  H03H3/02

CPC classification number: H04R31/00 ,  H01L41/083 ,  H01L41/27 ,  H03H3/02 ,  H03H3/04 ,  H03H9/584 ,  H03H9/588 ,  H03H9/589 ,  H03H2003/023 ,  H03H2003/025 ,  H03H2003/0421 ,  H03H2003/0428 ,  H03H2003/0435 ,  H03H2003/0442 ,  H04R2231/00 ,  Y10T29/42 ,  Y10T29/49004 ,  Y10T29/49005 ,  Y10T29/49147 ,  Y10T29/49155

Abstract: A method of manufacturing a stacked thin film piezoelectric filter includes the steps of forming a lower thin film piezoelectric resonator on a substrate, measuring a frequency of the lower thin film piezoelectric resonator and adjusting the frequency, forming an acoustic coupling layer on the lower thin film piezoelectric resonator whose frequency has been adjusted, forming the stacked thin film piezoelectric filter by forming an upper thin film piezoelectric resonator on the acoustic coupling layer, and measuring a frequency of the upper thin film piezoelectric resonator and adjusting the frequency.

Abstract translation: 层叠薄膜压电滤波器的制造方法包括以下步骤：在基板上形成下薄膜压电谐振器，测量下薄膜压电谐振器的频率并调节频率，在下薄膜上形成声耦合层 调节频率的压电谐振器，通过在声耦合层上形成上部薄膜压电谐振器，测量上部薄膜压电谐振器的频率并调整频率，形成叠层薄膜压电滤波器。

公开(公告)号：US08692630B2

公开(公告)日：2014-04-08

申请号：US12827875

申请日：2010-06-30

Applicant: Alexandre Reinhardt ,  Issiaka Kone

Inventor： Alexandre Reinhardt ,  Issiaka Kone

IPC: H03H9/70 ,  H03H9/54

CPC classification number: H03H3/04 ,  H03H9/02228 ,  H03H9/589

Abstract: A guided acoustic wave resonant device is provided. The device comprises at least two filters (F1, . . . , Fi, . . . , FN), each filter comprising at least two acoustic wave resonators (R11-R12, . . . , Ri1-Ri2, . . . , RN1-RN2), each filter having a useful frequency band (BF1, . . . , BFi, . . . , BFN) centered on a central frequency (f1, . . . , fi, . . . , fN), each resonator comprising at least one suite of inter-digitated upper electrodes exhibiting a periodic structure of period (Λij) and a layer of piezoelectric material, each resonator having a coupling coefficient (k21, k22, . . . , k2n) and a resonant frequency (fr1, . . . , fr2, . . . , fN), wherein at least one of the resonators comprises a differentiation layer (CDfi) making it possible in combination with the period of the inter-digitated electrodes to modify the coupling coefficient of the said resonator, the useful band and the central frequency being determined by the resonant frequencies and the coupling coefficients of the resonators which are adapted so as to have a determined useful bandwidth.

Abstract translation: 提供了一种引导声波谐振装置。 该装置包括至少两个滤波器（F1，...，Fi，...，FN），每个滤波器包括至少两个声波谐振器（R11-R12，...，Ri1-Ri2，...，RN1 -RN2），每个滤波器具有以中心频率（f1，...，fi，...，fN）为中心的有用频带（BF1，...，BFi，...，BFN），每个谐振器包括 具有周期（Λij）的周期性结构的至少一组数字化的上部电极和压电材料层，每个谐振器具有耦合系数（k21，k22，...，k2n）和谐振频率（fr1， 其中，所述谐振器中的至少一个包括微分层（CDfi），使得可以与所述数字化间电极的周期结合以修改所述谐振器的耦合系数 有用频带和中心频率由谐振频率和谐振器的耦合系数确定，这些谐振频率和谐振器的耦合系数被调整为具有 确定有用的带宽。

公开(公告)号：US08531083B2

公开(公告)日：2013-09-10

申请号：US12391490

申请日：2009-02-24

Applicant: Rajarishi Sinha ,  L. Richard Carley ,  Deok-Yang Kim

Inventor： Rajarishi Sinha ,  L. Richard Carley ,  Deok-Yang Kim

IPC: H01L41/08

CPC classification number: H01L41/083 ,  H01L41/18 ,  H03H9/0095 ,  H03H9/15 ,  H03H9/171 ,  H03H9/205 ,  H03H9/38 ,  H03H9/584 ,  H03H9/589 ,  H03H9/605 ,  H03H2009/02173

Abstract: A tunable acoustic resonator device has a piezoelectric medium as a first thin film layer and a tunable crystal medium as a second thin film layer. The tunable crystal medium has a first acoustic behavior over an operating temperature range under a condition of relatively low applied stress and a second acoustic behavior under a condition of relatively high applied stress. The acoustic behaviors are substantially different and, consequently, the different levels of applied stress are used to tune the acoustic resonator device. Compared with the tunable resonator device consisting of only tunable crystal medium, a device having both the piezoelectric and tunable crystal medium has advantages such as larger inherent bandwidth and less nonlinearity with AC signals. The device also requires a smaller applied stress (i.e. bias voltage) to achieve the required frequency tuning.

公开(公告)号：US20120218060A1

公开(公告)日：2012-08-30

申请号：US13208909

申请日：2011-08-12

Applicant: Dariusz Burak ,  Phil Nikkel ,  Jyrki Kaitila ,  John D. Larson, III ,  Alexandre Shirakawa

Inventor： Dariusz Burak ,  Phil Nikkel ,  Jyrki Kaitila ,  John D. Larson, III ,  Alexandre Shirakawa

IPC: H03H9/56

CPC classification number: H03H9/132 ,  H03H3/04 ,  H03H9/02007 ,  H03H9/02118 ,  H03H9/173 ,  H03H9/175 ,  H03H9/584 ,  H03H9/585 ,  H03H9/587 ,  H03H9/589

Abstract: A bulk acoustic wave (BAW) structure includes a first electrode disposed over a substrate, a piezoelectric layer disposed over the first electrode, and a second electrode disposed over the first piezoelectric layer. A bridge is formed within the piezoelectric layer, where the bridge is surrounded by piezoelectric material of the piezoelectric layer.

Abstract translation: 体声波（BAW）结构包括设置在基板上的第一电极，设置在第一电极上的压电层和设置在第一压电层上的第二电极。 桥接器形成在压电层内，桥被压电层的压电材料包围。

公开(公告)号：US20100005654A1

公开(公告)日：2010-01-14

申请号：US12172079

申请日：2008-07-11

Applicant: David Hart ,  David McDonald ,  Guillaume Bouche ,  Sudarsan Uppili

Inventor： David Hart ,  David McDonald ,  Guillaume Bouche ,  Sudarsan Uppili

IPC: H05K3/02

CPC classification number: H03H3/02 ,  H03H9/175 ,  H03H9/584 ,  H03H9/589 ,  H03H2003/025 ,  Y10T29/42 ,  Y10T29/49128 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/49156 ,  Y10T29/49165

Abstract: Planarization methods for maintaining planar surfaces in the fabrication of such devices as BAW devices and capacitors on a planar or planarized substrate are described. In accordance with the method, a metal layer is deposited and patterned, and an oxide layer is deposited using a high density plasma chemical vapor deposition (HDP CVD) process to a thickness equal to the thickness of the metal layer. The HDP CVD process provides an oxide layer on the patterned metal tapering upward from the edge of the patterned metal layer. Then, after masking and etching the oxide layer from the patterned metal layer, the patterned metal layer and surrounding oxide layer form a substantially planar layer, interrupted by small remaining oxide protrusions at the edges of the patterned layer. These small remaining oxide protrusions may be too small to significantly disturb the flatness of a further oxide or other layer or they may be further mitigated by the application of another HDP CVD oxide film.

Abstract translation: 描述了在平面或平面化基板上制造诸如BAW器件和电容器之类的器件的平面表面的平面化方法。 根据该方法，沉积和图案化金属层，并且使用高密度等离子体化学气相沉积（HDP CVD）工艺将氧化物层沉积到等于金属层厚度的厚度。 HDP CVD工艺在图案化金属的图案化金属层的边缘上向上逐渐变细的氧化层。 然后，在从图案化的金属层掩蔽和蚀刻氧化物层之后，图案化的金属层和周围的氧化物层形成基本平坦的层，被图案化层的边缘处的小的剩余的氧化物突起中断。 这些小的剩余氧化物突起可能太小而不能显着地扰乱另外的氧化物或其它层的平坦度，或者可以通过施加另一HDP CVD氧化物膜进一步减轻它们。