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1.发明授权公开(公告)号：US08796904B2
公开(公告)日：2014-08-05
申请号：US13286051
申请日：2011-10-31
CPC分类号： H03H9/587 , H03H9/02015 , H03H9/132 , H03H9/173 , H03H9/584
摘要： In a representative embodiment, a bulk acoustic wave (BAW) resonator, comprises: a first electrode disposed over a substrate; a first piezoelectric layer disposed over the first electrode, the first piezoelectric layer having a first c-axis oriented along a first direction; a second electrode disposed over the first piezoelectric layer; and a second piezoelectric layer disposed over the first electrode and adjacent to the first piezoelectric layer, wherein the second piezoelectric layer has a second c-axis oriented in a second direction that is substantially antiparallel to the first direction.
摘要翻译： 在代表性实施例中，体声波（BAW）谐振器包括：设置在基板上的第一电极; 设置在所述第一电极上的第一压电层，所述第一压电层具有沿着第一方向取向的第一c轴; 设置在所述第一压电层上的第二电极; 以及第二压电层，其设置在所述第一电极上并且邻近所述第一压电层，其中所述第二压电层具有在与所述第一方向基本上反平行的第二方向上定向的第二c轴。
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公开(公告)号：US07615833B2
公开(公告)日：2009-11-10
申请号：US10890343
申请日：2004-07-13
申请人： John D. Larson, III , Qing Bai , Farid Matta , Tracy Verhoeven
发明人： John D. Larson, III , Qing Bai , Farid Matta , Tracy Verhoeven
IPC分类号： H01L41/00
CPC分类号： H03H9/105 , H03B5/326 , H03H3/02 , H03H9/0547 , H03H9/706
摘要： A microfabricated device has a first substrate, a second substrate, a film bulk acoustic resonator (FBAR) device, and a circuit. The second substrate is bonded to the first substrate to define a chamber. The FBAR device is located on a surface of the first substrate and inside the chamber. The circuit is located on a surface of the second substrate and inside the chamber. An electrical connection connects the circuit and the FBAR device.
摘要翻译： 微加工装置具有第一基板，第二基板，薄膜体声波谐振器（FBAR）装置和电路。 第二基板被结合到第一基板以限定室。 FBAR装置位于第一基板的表面和室内。 电路位于第二基板的表面和室内。 电气连接连接电路和FBAR设备。
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公开(公告)号：US07427819B2
公开(公告)日：2008-09-23
申请号：US11073345
申请日：2005-03-04
申请人： Storrs T. Hoen , Mark A. Unkrich , William R. Trutna , John D. Larson, III , Richard C Ruby , Graham M. Flower , Annette Grot
发明人： Storrs T. Hoen , Mark A. Unkrich , William R. Trutna , John D. Larson, III , Richard C Ruby , Graham M. Flower , Annette Grot
CPC分类号： G01P15/097 , G01L1/165
摘要： An apparatus and method for measuring a target environmental variable (TEV) that employs a film-bulk acoustic resonator with motion plate. The film-bulk acoustic resonator (FBAR) includes an acoustic reflector formed in an FBAR wafer and a surface. A first electrode is formed on the surface of the acoustic reflector and has a surface. A piezoelectric layer is formed on the surface of the first electrode and has a surface. A second electrode is formed on the surface of the piezoelectric layer. A motion plate is suspended in space at a predetermined distance relative to the surface of the second electrode and is capacitively coupled to the FBAR.
摘要翻译： 一种用于测量采用具有运动板的膜 - 体声波谐振器的目标环境变量（TEV）的装置和方法。 膜 - 体声波谐振器（FBAR）包括形成在FBAR晶片和表面中的声反射器。 第一电极形成在声反射体的表面上并具有表面。 在第一电极的表面上形成压电层并具有表面。 第二电极形成在压电层的表面上。 运动板相对于第二电极的表面以预定距离悬挂在空间中，并且电容耦合到FBAR。
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4.发明授权公开(公告)号：US07423503B2
公开(公告)日：2008-09-09
申请号：US11253463
申请日：2005-10-18
申请人： John D Larson, III , Ian Hardcastle
发明人： John D Larson, III , Ian Hardcastle
IPC分类号： H03H9/54 , H01L41/083 , H01L41/107 , H01P1/36 , H01L41/18
摘要： Embodiments of the acoustic galvanic isolator comprise a carrier signal source, a modulator connected to receive an information signal and the carrier signal, a demodulator, and, connected between the modulator and the demodulator, an electrically-isolating acoustic coupler comprising an electrically-isolating film acoustically-coupled transformer (FACT).
摘要翻译： 声学电流隔离器的实施例包括载波信号源，连接以接收信息信号的调制器和载波信号，解调器，以及连接在调制器和解调器之间的电隔离声耦合器，包括电隔离膜 声耦合变压器（FACT）。
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公开(公告)号：US07408428B2
公开(公告)日：2008-08-05
申请号：US10977398
申请日：2004-10-29
申请人： John D. Larson, III
发明人： John D. Larson, III
摘要： The temperature-compensated film bulk acoustic resonator (FBAR) device comprises an FBAR stack. The FBAR stack comprises an FBAR and a temperature-compensating element. The FBAR is characterized by a resonant frequency having a temperature coefficient, and comprises opposed planar electrodes and a piezoelectric element between the electrodes. The piezoelectric element has a temperature coefficient on which the temperature coefficient of the resonant frequency depends at least in part. The temperature-compensating element has a temperature coefficient opposite in sign to the temperature coefficient of the piezoelectric element.
摘要翻译： 温度补偿膜体声波谐振器（FBAR）装置包括FBAR堆叠。 FBAR堆叠包括一个FBAR和一个温度补偿元件。 FBAR的特征在于具有温度系数的谐振频率，并且包括相对的平面电极和电极之间的压电元件。 压电元件具有温度系数，谐振频率的温度系数至少部分地取决于该温度系数。 温度补偿元件具有与压电元件的温度系数相符的温度系数。
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公开(公告)号：US07367095B2
公开(公告)日：2008-05-06
申请号：US11404403
申请日：2006-04-14
CPC分类号： H03H9/605 , H03H9/132 , H03H9/584 , H03H9/587 , Y10T29/42 , Y10T29/4902 , Y10T29/49128 , Y10T29/49155
摘要： Embodiments of an acoustically-coupled transformer have a first stacked bulk acoustic resonator (SBAR) and a second SBAR. Each of the SBARs has a lower film bulk acoustic resonator (FBAR) and an upper FBAR, and an acoustic decoupler between the FBARs. The upper FBAR is stacked atop the lower FBAR. Each FBAR has opposed planar electrodes and a piezoelectric element between the electrodes. The piezoelectric element is characterized by a c-axis. The c-axes of the piezoelectric elements of the lower FBARs are opposite in direction, and the c-axes of the piezoelectric elements of the upper FBARs are opposite in direction. The transformer additionally has a first electrical circuit connecting the lower FBAR of the first SBAR to the lower FBAR of the second SBAR, and a second electrical circuit connecting the upper FBAR of the first SBAR to the upper FBARs of the second SBAR.
摘要翻译： 声耦合变压器的实施例具有第一层叠体声波谐振器（SBAR）和第二SBAR。 每个SBAR具有较低的膜体声波谐振器（FBAR）和上部FBAR，以及FBAR之间的声学解耦器。 上部FBAR堆叠在较低FBAR的顶部。 每个FBAR具有相对的平面电极和电极之间的压电元件。 压电元件的特征在于c轴。 下FBAR的压电元件的c轴方向相反，上FBAR的压电元件的c轴方向相反。 变压器还具有将第一SBAR的下FBAR连接到第二SBAR的下FBAR的第一电路和将第一SBAR的上FBAR连接到第二SBAR的上FBAR的第二电路。
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7.发明授权公开(公告)号：US07358831B2
公开(公告)日：2008-04-15
申请号：US10969636
申请日：2004-10-19
摘要： The encapsulated film bulk acoustic resonator (FBAR) device comprises a substrate, an FBAR stack over the substrate, an element for acoustically isolating the FBAR stack from the substrate, encapsulant covering the FBAR stack, and an acoustic Bragg reflector between the top surface of the FBAR stack and the encapsulant. The FBAR stack comprises an FBAR and has a top surface remote from the substrate. The FBAR comprises opposed planar electrodes and a piezoelectric element between the electrodes. The acoustic Bragg reflector comprises a metal Bragg layer and a plastic Bragg layer juxtaposed with the metal Bragg layer. The large ratio between the acoustic impedances of the metal of the metal Bragg layer and the plastic material of the plastic Bragg layer enables the acoustic Bragg reflector to provide sufficient acoustic isolation between the FBAR and the encapsulant for the frequency response of the FBAR device to exhibit minor, if any, spurious artifacts arising from undesirable acoustic coupling between the FBAR and the encapsulant.
摘要翻译： 封装膜体声波谐振器（FBAR）器件包括衬底，衬底上的FBAR堆叠，用于将FBAR堆叠与衬底声学隔离的元件，覆盖FBAR堆叠的密封剂以及覆盖FBAR堆叠的声学布拉格反射器 FBAR堆叠和密封剂。 FBAR堆叠包括FBAR并且具有远离衬底的顶表面。 FBAR包括相对的平面电极和电极之间的压电元件。 声布拉格反射器包括与金属布拉格层并列的金属布拉格层和塑性布拉格层。 金属布拉格层的金属和塑料布拉格层的塑性材料的声阻抗之间的较大比率使得布拉格反射镜能够在FBAR和密封剂之间提供足够的声学隔离，用于FBAR装置的频率响应展现 轻微的，如果有的话，由FBAR和密封剂之间的不良声耦合产生的伪像。
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公开(公告)号：US07312675B2
公开(公告)日：2007-12-25
申请号：US11373355
申请日：2006-03-09
IPC分类号： H03H9/54
CPC分类号： H03H9/605 , H03H9/587 , H03H9/60 , Y10T29/42 , Y10T29/49005 , Y10T29/49155
摘要： An apparatus including vertically separated acoustic resonators are disclosed. The apparatus includes a first acoustic resonator on a substrate and a second acoustic resonator vertically separated above the first acoustic resonator. Because the resonators are vertically separated above another, total area required to implement the resonators is reduced thereby savings in die size and cost are realized. The vertically separated resonators are supported by standoffs that are fabricated on the substrate, or on a resonator.
摘要翻译： 公开了一种包括垂直分离的声谐振器的装置。 该装置包括在基板上的第一声谐振器和在第一声谐振器之上垂直分离的第二声谐振器。 由于谐振器在另一个上方垂直分离，所以实现谐振器所需的总面积减小，从而实现了芯片尺寸和成本的节省。 垂直分离的谐振器由制造在衬底上或在谐振器上的支座支撑。
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9.发明授权Film acoustically-coupled transformers with two reverse c-axis piezoelectric elements 有权具有两个反向c轴压电元件的薄膜声耦合变压器公开(公告)号：US07091649B2
公开(公告)日：2006-08-15
申请号：US10836663
申请日：2004-04-29
IPC分类号： H01L41/08
CPC分类号： H03H9/605 , H01L2224/48091 , H01L2224/49175 , H03H9/132 , H03H9/584 , H03H9/587 , Y10T29/42 , H01L2924/00014
摘要： Embodiments of an acoustically-coupled transformer have a first stacked bulk acoustic resonator (SBAR) and a second SBAR. Each of the SBARs has a lower film bulk acoustic resonator (FBAR) and an upper FBAR, and an acoustic decoupler between the FBARs. The upper FBAR is stacked atop the lower FBAR. Each FBAR has opposed planar electrodes and a piezoelectric element between the electrodes. The piezoelectric element is characterized by a c-axis. The c-axes of the piezoelectric elements of the lower FBARs are opposite in direction, and the c-axes of the piezoelectric elements of the upper FBARs are opposite in direction. The transformer additionally has a first electrical circuit connecting the lower FBAR of the first SBAR to the lower FBAR of the second SBAR, and a second electrical circuit connecting the upper FBAR of the first SBAR to the upper FBARs of the second SBAR.
摘要翻译： 声耦合变压器的实施例具有第一层叠体声波谐振器（SBAR）和第二SBAR。 每个SBAR具有较低的膜体声波谐振器（FBAR）和上部FBAR，以及FBAR之间的声学解耦器。 上部FBAR堆叠在较低FBAR的顶部。 每个FBAR具有相对的平面电极和电极之间的压电元件。 压电元件的特征在于c轴。 下FBAR的压电元件的c轴方向相反，上FBAR的压电元件的c轴方向相反。 变压器还具有将第一SBAR的下FBAR连接到第二SBAR的下FBAR的第一电路和将第一SBAR的上FBAR连接到第二SBAR的上FBAR的第二电路。
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公开(公告)号：US06946928B2
公开(公告)日：2005-09-20
申请号：US10699481
申请日：2003-10-30
CPC分类号： H03H9/605 , H01L2224/48091 , H01L2224/49175 , H03H9/132 , H03H9/584 , H03H9/587 , Y10T29/42 , H01L2924/00014
摘要： The acoustically-coupled transformer includes first and second stacked bulk acoustic resonators (SBARs), each having a stacked pair of film bulk acoustic resonators (FBARs) with an acoustic decoupler between them. In one embodiment, the acoustic decoupler comprises a layer of decoupling material has having a nominal thickness equal to an odd integral multiple of one quarter of the wavelength of an acoustic wave having a frequency equal to the transformer's center frequency. In another embodiment, the acoustic decoupler comprises a Bragg stack. Each FBAR has opposed planar electrodes with piezoelectric material between them. The transformer additionally has first terminals, second terminals, a first electrical circuit connecting one FBARs of the first SBAR to one FBAR of the second SBAR and the first terminals, and a second electrical circuit connecting the other FBAR of the first SBAR to the other FBAR of the second SBAR and the second terminals.
摘要翻译： 声耦合变压器包括第一和第二堆叠的体声波谐振器（SBAR），每个具有堆叠的一对薄膜体声共振器（FBAR），在它们之间具有声耦合器。 在一个实施例中，声学解耦器包括去耦材料层具有等于频率等于变压器中心频率的声波波长四分之一的奇数整数倍的标称厚度。 在另一个实施例中，声分离器包括布拉格堆叠。 每个FBAR都具有与它们之间的压电材料的平面电极。 变压器还具有第一端子，第二端子，将第一SBAR的一个FBAR与第二SBAR的一个FBAR和第一端子连接的第一电路，以及将第一SBAR的另一个FBAR连接到另一个FBAR的第二电路 的第二个SBAR和第二个终端。
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