METHODS TO REDUCE MEASURE CURRENT SETTLING TIME IN SMU

    公开(公告)号:US20240356492A1

    公开(公告)日:2024-10-24

    申请号:US18240564

    申请日:2023-08-31

    CPC classification number: H03F1/0211 H03F2200/144 H03F2200/462 H03F2200/471

    Abstract: The techniques and circuits, described herein, include solutions for reducing measure current settling time in source measurement units (SMUs) during a force voltage mode of operation. An SMU includes a force amplifier having a first voltage input, a second voltage input, a feedback voltage input, and a output. A resistor has a first terminal coupled to the output of the force amplifier, and a second terminal. A switch is coupled between the second terminal of the resistor and the feedback voltage input of the force amplifier. The switch is closed in the force voltage mode, creating a feedback path which the resistor is contained within. A series combination of a capacitor and a resistor is coupled to a gate of a transistor within the force amplifier, which results in improved measure current settling time compared to alternative techniques.

    TRANS-IMPEDANCE AMPLIFIER AND TRANS-IMPEDANCE AMPLIFIER CONTROL METHOD

    公开(公告)号:US20240146256A1

    公开(公告)日:2024-05-02

    申请号:US18406864

    申请日:2024-01-08

    CPC classification number: H03F3/082 H03F1/342 H03F2200/144 H03F2200/441

    Abstract: Embodiments of this application disclose a trans-impedance amplifier and a trans-impedance amplifier control method that are used in the field of circuit technologies. A trans-impedance amplifier TIA includes an inverting amplification circuit and a voltage clamping circuit. The inverting amplification circuit is connected in parallel to the voltage clamping circuit. The inverting amplification circuit includes a first PMOS transistor and a first NMOS transistor that have a common gate. A source of the first PMOS transistor is connected to a drain of the first NMOS transistor. The voltage clamping circuit includes a second PMOS transistor and a second NMOS transistor that have a common gate. Gates of the two transistors are connected to an input end of the TIA. A source of the second NMOS transistor and a drain of the second PMOS transistor are connected to an output end of the TIA.

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