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112 条记录 (耗时 0.021 秒)

    AMPLIFIER CIRCUIT WITH PROTECTION CIRCUIT
    1.
    发明公开
    AMPLIFIER CIRCUIT WITH PROTECTION CIRCUIT 审中-公开

    公开(公告)号：US20230327609A1

    公开(公告)日：2023-10-12

    申请号：US18123818

    申请日：2023-03-20

    申请人： Skyworks Solutions, Inc.

    发明人： Netsanet Gebeyehu

    IPC分类号： H03F1/30 ,  H03F3/24

    CPC分类号： H03F1/30 ,  H03F3/245 ,  H03F2200/451 ,  H03F2200/426 ,  H03F2200/441 ,  H03F2200/153

    摘要： An amplifier circuit comprising: a power amplifier; a bias control circuit coupled to the power amplifier and having a voltage sensor configured to sense a bias voltage to the power amplifier, the bias control circuit being configured to determine whether the bias voltage exceeds a threshold voltage; and a protection circuit coupled to the power amplifier, the bias control circuit being further configured to control the protection circuit to apply a clamping status to limit a power output of the power amplifier to a predetermined value in response to the bias control circuit determining that the bias voltage exceeds a threshold voltage.

    RF AMPLIFIER
    5.
    发明申请
    RF AMPLIFIER 有权
    射频放大器

    公开(公告)号：US20170019075A1

    公开(公告)日：2017-01-19

    申请号：US15209816

    申请日：2016-07-14

    申请人： NXP B.V.

    发明人： Gian Hoogzaad

    IPC分类号： H03F1/52 ,  H03F3/195

    CPC分类号： H03F1/52 ,  H03F3/195 ,  H03F3/45475 ,  H03F2200/18 ,  H03F2200/258 ,  H03F2200/294 ,  H03F2200/426 ,  H03F2200/441 ,  H03F2200/444 ,  H03F2200/451 ,  H03F2200/462 ,  H03F2200/481 ,  H03F2200/489 ,  H03F2200/492 ,  H03F2200/78

    摘要： An RF amplifier comprising an input-transistor having an input-transistor-base terminal, an input-transistor-collector terminal and an input-transistor-emitter terminal; a degeneration-component connected between the input-transistor-emitter terminal and a ground terminal; and a protection-transistor having a protection-transistor-base terminal, a protection-transistor-collector terminal and a protection-transistor-emitter terminal. The input-transistor-base terminal is connected to the protection-transistor-emitter terminal, and the protection-transistor-base terminal is connected to the input-transistor-emitter.

    摘要翻译： 一种RF放大器，包括具有输入晶体管基极端子的输入晶体管，输入晶体管集电极端子和输入晶体管 - 发射极端子; 连接在输入 - 晶体管 - 发射极端子和接地端子之间的退化分量; 以及具有保护晶体管基极端子的保护晶体管，保护晶体管集电极端子和保护晶体管 - 发射极端子。 输入晶体管基极端子连接到保护晶体管 - 发射极端子，保护晶体管基极端子连接到输入晶体管 - 发射极。

    Amplifier circuit
    6.
    发明授权
    Amplifier circuit 有权
    放大器电路

    公开(公告)号：US09543905B2

    公开(公告)日：2017-01-10

    申请号：US14594773

    申请日：2015-01-12

    申请人： Seiko Instruments Inc.

    发明人： Tsutomu Tomioka

    IPC分类号： H03F1/52 ,  H03F1/22

    CPC分类号： H03F1/523 ,  H03F1/223 ,  H03F2200/441

    摘要： Provided is an amplifier circuit including an NMOS transistor having a low drain breakdown voltage and an NMOS transistor having a high drain breakdown voltage connected in series thereto, and capable of preventing breakdown of a drain of the NMOS transistor having a low drain breakdown voltage. A clamp circuit configured to limit a drain voltage of the NMOS transistor having a low drain breakdown voltage is connected to the drain thereof.

    摘要翻译： 提供了包括具有低漏极击穿电压的NMOS晶体管和具有与其串联连接的高漏极击穿电压的NMOS晶体管的放大器电路，并且能够防止具有低漏极击穿电压的NMOS晶体管的漏极击穿。 配置成限制具有低漏极击穿电压的NMOS晶体管的漏极电压的钳位电路连接到其漏极。

    Apparatus and methods for amplifier input protection
    8.
    发明授权
    Apparatus and methods for amplifier input protection 有权
    放大器输入保护的装置和方法

    公开(公告)号：US09276531B2

    公开(公告)日：2016-03-01

    申请号：US14262255

    申请日：2014-04-25

    申请人： Analog Devices, Inc.

    发明人： Moshe Gerstenhaber ,  Rayal Johnson

    IPC分类号： H03F1/52 ,  H03F3/16

    CPC分类号： H03F1/523 ,  H03F3/16 ,  H03F3/45475 ,  H03F2200/441 ,  H03F2200/471 ,  H03F2203/45552

    摘要： Apparatus and methods for amplifier input protection are provided. In certain implementations, an amplifier input protection circuit includes a first JFET electrically connected between a first input and a first output, and a second JFET electrically connected between a second input and a second output. Additionally, a first clamp is electrically connected to the first output, and a second clamp is electrically connected to the second output. A first current mirror mirrors a current through the first clamp, and provides the mirrored current to a third JFET electrically connected between the first JFET's source and gate. Additionally, a second current mirror that mirrors a current through the second clamp, and provides the mirrored current to a fourth JFET that is electrically connected between a source and gate of the second JFET. Configuring the protection circuit in this manner can provide the benefits of both low noise and low fault current.

    摘要翻译： 提供放大器输入保护的装置和方法。 在某些实施方案中，放大器输入保护电路包括电连接在第一输入端和第一输出端之间的第一JFET以及电连接在第二输入端和第二输出端之间的第二JFET。 另外，第一钳位电连接到第一输出端，​​第二钳位电连接到第二输出。 第一电流镜反射通过第一夹具的电流，并将镜像电流提供到电连接在第一JFET源极和栅极之间的第三JFET。 另外，第二电流镜反射通过第二夹具的电流，并且将镜像电流提供给电连接在第二JFET的源极和栅极之间的第四JFET。 以这种方式配置保护电路可以提供低噪声和低故障电流的优点。

    Negative audio signal voltage protection circuit and method for audio ground circuits
    9.
    发明授权
    Negative audio signal voltage protection circuit and method for audio ground circuits 有权
    用于音频接地电路的负音频信号电压保护电路和方法

    公开(公告)号：US09136796B2

    公开(公告)日：2015-09-15

    申请号：US13920302

    申请日：2013-06-18

    申请人： Texas Instruments Incorporated

    发明人： David H. Elwart, II ,  Vikas Suma Vinay ,  Christopher M. Graves ,  Baher S. Haroun

    IPC分类号： H04B15/00 ,  H03F1/30 ,  H02H9/04

    CPC分类号： H03F1/305 ,  H02H9/045 ,  H03F1/523 ,  H03F3/187 ,  H03F3/68 ,  H03F2200/441 ,  H03F2200/444 ,  H03F2200/555 ,  H03K17/6874 ,  H03K2217/0018

    摘要： Self-grounded circuitry (10) includes a signal channel conducting an output voltage (VOUT1). A charge pump (2) powered by a reference voltage (VDD) produces a control voltage (VCP). The control signal is at a low level if the reference voltage is low and is boosted to a high level if the reference voltage is high. A ground switch circuit (15) includes a depletion mode transistor (MP1) having a source coupled to the output voltage, a gate coupled to the control voltage, and a drain coupled to ground. The transistor includes a well region (4-1) and a parasitic substrate diode (D3-1). A negative voltage protection circuit (17-1) includes a depletion mode first protection transistor (MP3-1) having a drain coupled to the well region, a source coupled to a source of a depletion mode second protection transistor (MP4-1) having a drain coupled to the output voltage, the first and second protection transistors each having a gate coupled to the control voltage, and also includes a diode (MN1) coupled to charge the well region from the control voltage conductor to prevent distortion of the output voltage.

    摘要翻译： 自接地电路（10）包括传导输出电压（VOUT1）的信号通道。 由参考电压（VDD）供电的电荷泵（2）产生控制电压（VCP）。 如果参考电压较低，则控制信号处于低电平，并且如果参考电压高，则其升压到高电平。 接地开关电路（15）包括具有耦合到输出电压的源极的耗尽型晶体管（MP1），耦合到控制电压的栅极和耦合到地的漏极。 晶体管包括阱区（4-1）和寄生衬底二极管（D3-1）。 负电压保护电路（17-1）包括具有耦合到阱区的漏极的耗尽型第一保护晶体管（MP3-1），耦合到耗尽型第二保护晶体管（MP4-1）的源极的源极， 耦合到输出电压的漏极，第一和第二保护晶体管各自具有耦合到控制电压的栅极，并且还包括耦合到从控制电压导体对阱区域充电的二极管（MN1），以防止输出电压的失真 。

    AMPLIFIER CIRCUIT
    10.
    发明申请
    AMPLIFIER CIRCUIT 有权
    放大器电路

    公开(公告)号：US20150207468A1

    公开(公告)日：2015-07-23

    申请号：US14594773

    申请日：2015-01-12

    申请人： Seiko Instruments Inc.

    发明人： Tsutomu TOMIOKA

    IPC分类号： H03F1/52 ,  H03F3/16

    CPC分类号： H03F1/523 ,  H03F1/223 ,  H03F2200/441

    摘要： Provided is an amplifier circuit including an NMOS transistor having a low drain breakdown voltage and an NMOS transistor having a high drain breakdown voltage connected in series thereto, and capable of preventing breakdown of a drain of the NMOS transistor having a low drain breakdown voltage. A clamp circuit configured to limit a drain voltage of the NMOS transistor having a low drain breakdown voltage is connected to the drain thereof.

    摘要翻译： 提供了包括具有低漏极击穿电压的NMOS晶体管和具有与其串联连接的高漏极击穿电压的NMOS晶体管的放大器电路，并且能够防止具有低漏极击穿电压的NMOS晶体管的漏极击穿。 配置成限制具有低漏极击穿电压的NMOS晶体管的漏极电压的钳位电路连接到其漏极。